| No. |
Part Name |
Description |
Manufacturer |
| 2521 |
PMD10K100 |
Trans GP BJT NPN 100V 12A 3-Pin(2+Tab) TO-3 Sleeve |
New Jersey Semiconductor |
| 2522 |
PMD10K60 |
Trans GP BJT NPN 60V 12A 3-Pin(2+Tab) TO-3 Sleeve |
New Jersey Semiconductor |
| 2523 |
PMD10K80 |
Trans GP BJT NPN 80V 12A 3-Pin(2+Tab) TO-3 Sleeve |
New Jersey Semiconductor |
| 2524 |
PMD11K100 |
Trans GP BJT PNP 100V 12A 3-Pin(2+Tab) TO-3 Sleeve |
New Jersey Semiconductor |
| 2525 |
PMD19D100 |
Trans GP BJT PNP 60V 30A 3-Pin(2+Tab) TO-3 Sleeve |
New Jersey Semiconductor |
| 2526 |
PSMN0R9-30ULD |
N-channel 30 V, 0.87 mΩ, 300 A logic level MOSFET in SOT1023A enhanced package for UL2595, using NextPowerS3 Schottky-Plus Technology |
Nexperia |
| 2527 |
PSMN1R0-40ULD |
N-channel 40 V, 1.1 mΩ, 280 A logic level MOSFET in SOT1023A enhanced package for UL2595, using NextPower-S3 Schottky-Plus technology |
Nexperia |
| 2528 |
PSMN1R0-40YLD |
N-channel 40 V, 1.1 mΩ, 280 A logic level MOSFET in LFPAK56 using NextPower-S3 Schottky-Plus technology |
Nexperia |
| 2529 |
PSMN1R0-40YSH |
N-channel 40 V, 1 mΩ, 290 A standard level MOSFET in LFPAK56E using NextPower-S3 Schottky-Plus technology |
Nexperia |
| 2530 |
PSMN1R5-40YSD |
N-channel 40 V, 1.5 mΩ, 190 A standard level MOSFET in LFPAK56 using NextPower-S3 Schottky-Plus technology |
Nexperia |
| 2531 |
PSMN1R7-40YLD |
N-channel 40 V, 1.7 mΩ, 120 A logic level MOSFET in LFPAK56 using NextPower-S3 Schottky-Plus technology |
Nexperia |
| 2532 |
PSMN1R9-40YSD |
N-channel 40 V, 1.9 mΩ, 120 A standard level MOSFET in LFPAK56 using NextPower-S3 Schottky-Plus technology |
Nexperia |
| 2533 |
PSMN2R0-40YLD |
N-channel 40 V, 2.1 mΩ, 120 A logic level MOSFET in LFPAK56 using NextPower-S3 Schottky-Plus technology |
Nexperia |
| 2534 |
PSMN2R2-40YSD |
N-channel 40 V, 2.2 mΩ, 120 A standard level MOSFET in LFPAK56 using NextPower-S3 Schottky-Plus technology |
Nexperia |
| 2535 |
PSMN2R5-40YLD |
N-channel 40 V, 2.5 mΩ, 120 A logic level MOSFET in LFPAK56 using NextPower-S3 Schottky-Plus technology |
Nexperia |
| 2536 |
PSMN2R8-40YSD |
N-channel 40 V, 2.7 mΩ, 120 A standard level MOSFET in LFPAK56 using NextPower-S3 Schottky-Plus technology |
Nexperia |
| 2537 |
PSMN3R2-40YLD |
N-channel 40 V, 3.1 mΩ, 120 A logic level MOSFET in LFPAK56 using NextPower-S3 Schottky-Plus technology |
Nexperia |
| 2538 |
PSMN3R5-40YSD |
N-channel 40 V, 3.5 mΩ, 120 A standard level MOSFET in LFPAK56 using NextPower-S3 Schottky-Plus technology |
Nexperia |
| 2539 |
PSMNR90-40YLH |
N-channel 40 V, 0.94 mΩ, 300 A logic level MOSFET in LFPAK56E using NextPower-S3 Schottky-Plus technology |
Nexperia |
| 2540 |
PSS9013G |
PSS9013 series; 20 V NPN general purpose transistors |
Philips |
| 2541 |
PSS9013H |
PSS9013 series; 20 V NPN general purpose transistors |
Philips |
| 2542 |
R23 SMD |
Marking for NE85630 part number, 30 NEC (SOT323) package, or NE85633 part number with 33 NEC (SOT23) package |
NEC |
| 2543 |
R3 SMD |
Marking for NE02130 part number, 30 NEC (SOT323) package, or NE02133 part number with 33 NEC (SOT23) package |
NEC |
| 2544 |
R33 SMD |
Marking for NE68130 part number, 30 NEC (SOT323) package, or NE68133 part number with 33 NEC (SOT23) package |
NEC |
| 2545 |
R43 SMD |
Marking for NE68030 part number, 30 NEC (SOT323) package, or NE68033 part number with 33 NEC (SOT23) package |
NEC |
| 2546 |
RA20H8087M |
806-825/ 851-870MHz 20W 12.5V/ 3 Stage Amp. For MOBILE RADIO |
Mitsubishi Electric Corporation |
| 2547 |
RA20H8087M-01 |
806-825/ 851-870MHz 20W 12.5V/ 3 Stage Amp. For MOBILE RADIO |
Mitsubishi Electric Corporation |
| 2548 |
RA20H8087M-E01 |
806-825/ 851-870MHz 20W 12.5V/ 3 Stage Amp. For MOBILE RADIO |
Mitsubishi Electric Corporation |
| 2549 |
REF2912 |
1.25V 100ppm/C, 50uA in SOT23-3 Series (Bandgap) Voltage Reference |
Texas Instruments |
| 2550 |
REF2912AIDBZR |
1.25V 100ppm/C, 50uA in SOT23-3 Series (Bandgap) Voltage Reference |
Texas Instruments |
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