No. |
Part Name |
Description |
Manufacturer |
2521 |
MIC2524-1BWM |
Quad USB Power Control Switch Not Recommended for New Designs |
Micrel Semiconductor |
2522 |
MIC2524-2BN |
Quad USB Power Control Switch Not Recommended for New Designs |
Micrel Semiconductor |
2523 |
MIC2524-2BWM |
Quad USB Power Control Switch Not Recommended for New Designs |
Micrel Semiconductor |
2524 |
MIC2525-1BM |
USB Power Control Switch Not Recommended for New Designs |
Micrel Semiconductor |
2525 |
MIC2525-1BN |
USB Power Control Switch Not Recommended for New Designs |
Micrel Semiconductor |
2526 |
MIC2525-2BM |
USB Power Control Switch Not Recommended for New Designs |
Micrel Semiconductor |
2527 |
MIC2525-2BN |
USB Power Control Switch Not Recommended for New Designs |
Micrel Semiconductor |
2528 |
MIC2526-1BM |
Dual USB Power Control Switch Not Recommended for New Designs |
Micrel Semiconductor |
2529 |
MIC2526-1BN |
Dual USB Power Control Switch Not Recommended for New Designs |
Micrel Semiconductor |
2530 |
MIC2526-2BM |
Dual USB Power Control Switch Not Recommended for New Designs |
Micrel Semiconductor |
2531 |
MIC2526-2BN |
Dual USB Power Control Switch Not Recommended for New Designs |
Micrel Semiconductor |
2532 |
MIC2527-1BN |
Quad USB Power Control Switch Not Recommended for New Designs |
Micrel Semiconductor |
2533 |
MIC2527-1BWM |
Quad USB Power Control Switch Not Recommended for New Designs |
Micrel Semiconductor |
2534 |
MIC2527-2BN |
Quad USB Power Control Switch Not Recommended for New Designs |
Micrel Semiconductor |
2535 |
MIC2527-2BWM |
Quad USB Power Control Switch Not Recommended for New Designs |
Micrel Semiconductor |
2536 |
MIC5012BN |
Dual High- or Low-Side MOSFET Driver Not Recommended for New Designs |
Micrel Semiconductor |
2537 |
MIC5012BWM |
Dual High- or Low-Side MOSFET Driver Not Recommended for New Designs |
Micrel Semiconductor |
2538 |
MICROMUX |
A Two-wire data acquisition system - with ASCII computer interface - designed for tough environments |
Burr Brown |
2539 |
Microwave Substrates |
Microwave substrates are designed to meet the demands of devices in the Ultra High Frequency (UHF) to microwave frequency range, can be metallized for thick film applications |
Skyworks Solutions |
2540 |
MIP2C2 |
High-Performance IPD for Battery Chaegers |
Matsushita Electric Works(Nais) |
2541 |
MIP2E4D |
High-Performance IPD for Battery Chaegers |
Matsushita Electric Works(Nais) |
2542 |
MJ2267 |
Silicon PNP power transistor, these devices can be directly substituted for germanium types |
Motorola |
2543 |
MJ2268 |
Silicon PNP power transistor, these devices can be directly substituted for germanium types |
Motorola |
2544 |
MJ2955 |
PNP High power transistor. Designed for general-purpose switching and amplifier application. Vceo = 60Vdc, Vcer = 70Vdc, Vcb = 100Vdc Ic = 15Adc, PD = 115W. |
USHA India LTD |
2545 |
MJ3029 |
NPN power transistor designed for horizontal and vertical deflection amplifier circuits for TV |
Motorola |
2546 |
MJ3030 |
NPN power transistor designed for horizontal and vertical deflection amplifier circuits for TV |
Motorola |
2547 |
MJ3201 |
High-voltage NPN silicon transistor designed for use in line-operated equipment |
Motorola |
2548 |
MJ3202 |
High-voltage NPN silicon transistor designed for use in line-operated equipment |
Motorola |
2549 |
MJ400 |
High-voltage NPN silicon transistor designed for video output circuitry in color television receivers |
Motorola |
2550 |
MJ420 |
NPN silicon high-voltage transistor designed for video output circuitry in transistorized television receivers |
Motorola |
| | | |