No. |
Part Name |
Description |
Manufacturer |
2521 |
TMM2018AP-25 |
16,384 bits high speed and low power static random access memory organized as 2,048 words by 8 bits and operates from a single 5V supply |
TOSHIBA |
2522 |
TMM2018AP-35 |
16,384 bits high speed and low power static random access memory organized as 2,048 words by 8 bits and operates from a single 5V supply |
TOSHIBA |
2523 |
TMM2018AP-45 |
16,384 bits high speed and low power static random access memory organized as 2,048 words by 8 bits and operates from a single 5V supply |
TOSHIBA |
2524 |
TPS53632G |
Half-Bridge, D-CAP+ Controller for 48-V GaN DC/DC Converter 32-VQFN -10 to 105 |
Texas Instruments |
2525 |
TPS53632GRSMR |
Half-Bridge, D-CAP+ Controller for 48-V GaN DC/DC Converter 32-VQFN -10 to 105 |
Texas Instruments |
2526 |
TPS53632GRSMT |
Half-Bridge, D-CAP+ Controller for 48-V GaN DC/DC Converter 32-VQFN -10 to 105 |
Texas Instruments |
2527 |
TQP0102 |
DC - 4 GHz, 5 Watt GaN Power Transistor |
Qorvo |
2528 |
TQP0103 |
DC - 4 GHz, 15 Watt GaN Power Transistor |
Qorvo |
2529 |
TQP0104 |
DC - 4 GHz, 30 Watt GaN Power Transistor |
Qorvo |
2530 |
TYPE 94SVP |
New OS-CON series as results of polymerized organic semiconductor as electrolyte, Features superior heat-proof characteristics compared with previously developed OS-CON series |
Vishay |
2531 |
UM3511A |
Melody Organ Generator |
UMC |
2532 |
UPD16908 |
DC-DC converter IC for organic EL |
NEC |
2533 |
UPD16908K9-9B4-A |
DC-DC converter IC for organic EL |
NEC |
2534 |
UPD45128163G5-A10-9JF |
128M-bit synchronous DRAM, organization 2M x 16 x 4, LVTTL, 10ns, 3.3V |
Elpida Memory |
2535 |
UPD45128163G5-A75-9JF |
128M-bit synchronous DRAM, organization 2M x 16 x 4, LVTTL, 7.5ns, 3.3V |
Elpida Memory |
2536 |
UPD45128163G5-A80-9JF |
128M-bit synchronous DRAM, organization 2M x 16 x 4, LVTTL, 8ns, 3.3V |
Elpida Memory |
2537 |
UPD45128441G5-A10-9JF |
128M-bit synchronous DRAM, organization 8M x 4 x 4, LVTTL, 10ns, 3.3V |
Elpida Memory |
2538 |
UPD45128441G5-A75-9JF |
128M-bit synchronous DRAM, organization 8M x 4 x 4, LVTTL, 7.5ns, 3.3V |
Elpida Memory |
2539 |
UPD45128441G5-A80-9J |
128M-bit synchronous DRAM, organization 8M x 4 x 4, LVTTL, 8ns, 3.3V |
Elpida Memory |
2540 |
UPD45128841G5-A10-9JF |
128M-bit synchronous DRAM, organization 4M x 8 x 4, LVTTL, 10ns, 3.3V |
Elpida Memory |
2541 |
UPD45128841G5-A75-9JF |
128M-bit synchronous DRAM, organization 4M x 8 x 4, LVTTL, 7.5ns, 3.3V |
Elpida Memory |
2542 |
UPD45128841G5-A80-9JF |
128M-bit synchronous DRAM, organization 4M x 8 x 4, LVTTL, 8ns, 3.3V |
Elpida Memory |
2543 |
W24LH8 |
Normal speed, Very low power CMOS static RAM Organized as 32768 x 8 bits |
Winbond Electronics |
2544 |
W24LH8Q-55LE |
Normal speed, Very low power CMOS static RAM Organized as 32768 x 8 bits |
Winbond Electronics |
2545 |
W24LH8Q-55LI |
Normal speed, Very low power CMOS static RAM Organized as 32768 x 8 bits |
Winbond Electronics |
2546 |
W24LH8S-55LE |
Normal speed, Very low power CMOS static RAM Organized as 32768 x 8 bits |
Winbond Electronics |
2547 |
W24LH8S-55LI |
Normal speed, Very low power CMOS static RAM Organized as 32768 x 8 bits |
Winbond Electronics |
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