| No. |
Part Name |
Description |
Manufacturer |
| 2521 |
AM0405-100 |
Gold metallized silicon NPN pulse power transistor, 420-450MHz 100W |
SGS Thomson Microelectronics |
| 2522 |
AM0710-300 |
High Power 300W, refractory/gold metallized silicon bipolar device suitable for UHF avionics, radar and EW applications |
SGS Thomson Microelectronics |
| 2523 |
BFP90A |
NPN gold-metallized 1GHz broadband transistor, low noise, high gain and low distorsion |
Philips |
| 2524 |
BFP91A |
NPN gold-metallized 1GHz broadband transistor, low noise, high gain and low distorsion |
Philips |
| 2525 |
BFP96 |
NPN gold-metallized 1GHz broadband transistor, low noise, high gain and low distorsion |
Philips |
| 2526 |
BFQ23C |
Silicon planar epitaxial gold-metallized PNP transistor in a sub-miniature HERMETICALLY SEALED micro-stripline envelope |
Philips |
| 2527 |
BFQ32C |
Gold-metallized PNP silicon RF transistor |
Philips |
| 2528 |
BFQ51C |
Gold-metallized PNP silicon transistor, intended for use in UHF and microwave amplifiers, NPN complement is BFP90A |
Philips |
| 2529 |
BFR91A |
NPN silicon planar epitaxial transistor for use in UHF and microwave amplifiers, low noise, high power gain, gold metallization |
Philips |
| 2530 |
BKC2000 |
15 V, 500 mA, gold bonded germanium diode |
BKC International Electronics |
| 2531 |
CFY25 |
GaAs FET (Low noise High gain For front-end amplifiers lon-implanted planar structure All gold metallization) |
Siemens |
| 2532 |
CFY25-17 |
GaAs FET (Low noise High gain For front-end amplifiers lon-implanted planar structure All gold metallization) |
Siemens |
| 2533 |
CFY25-20 |
GaAs FET (Low noise High gain For front-end amplifiers lon-implanted planar structure All gold metallization) |
Siemens |
| 2534 |
CFY25-23 |
GaAs FET (Low noise High gain For front-end amplifiers lon-implanted planar structure All gold metallization) |
Siemens |
| 2535 |
CGY31 |
GaAs MMIC (Two-stage monolithic microwave IC MMIC amplifier All-gold metallization Chip fully passivated) |
Siemens |
| 2536 |
CGY52 |
GaAs MMIC (Two stages monolithic microwave IC MMICAmplifier All gold metallisation) |
Siemens |
| 2537 |
CWR06 |
Solid Tantalum Chip Capacitors, Conformal, MIDGET® Solid-Electrolyte Military, MIL-C-55365/4 Qualified, Minimum Size, Tape and Reel Packaging, Gold Plate, 60/40 Electroplate, or Hot Solder Dipped Terminations Available |
Vishay |
| 2538 |
D1001UK |
GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 20W - 28V - 175MHz SINGLE ENDED |
SemeLAB |
| 2539 |
D1014 |
GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET |
etc |
| 2540 |
D1024UK |
GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 40W - 28V - 500MHz PUSH?PULL |
SemeLAB |
| 2541 |
D1025UK |
GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 100W - 28V - 175MHz SINGLE ENDED |
SemeLAB |
| 2542 |
D1221UK |
GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 10W - 12.5V - 175MHz SINGLE ENDED |
SemeLAB |
| 2543 |
D1222UK |
GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 60W - 12.5V - 175MHz PUSH-PULL |
SemeLAB |
| 2544 |
D2204UK |
GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 20W - 12.5V - 900MHz SINGLE ENDED |
SemeLAB |
| 2545 |
D2205UK |
GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 7.5W - 12.5V - 1GHz SINGLE ENDED |
SemeLAB |
| 2546 |
D2208UK |
GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 40W - 12.5V - 500MHz PUSH-PULL |
SemeLAB |
| 2547 |
D2290UK |
GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 1W - 12.5V - 1GHz SINGLE ENDED |
SemeLAB |
| 2548 |
D5K1 |
GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 400W - 50V - 175MHZ PUSH-PULL |
New Jersey Semiconductor |
| 2549 |
D5K2 |
GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 400W - 50V - 175MHZ PUSH-PULL |
New Jersey Semiconductor |
| 2550 |
DFP14 |
Military, Hot Solder Dip or Gold Plated Leads, Highly Stable, Passes MIL-STD-202 Method 210, Condition E ""Resistance to Soldering Heat"" Test |
Vishay |
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