| No. |
Part Name |
Description |
Manufacturer |
| 2521 |
1N419 |
80 V, 500 mA, gold bonded germanium diode |
BKC International Electronics |
| 2522 |
1N429 |
Silicon Voltage Reference Diode temperature compensated 6.2V, Military Version USAF/JAN |
Transitron Electronic |
| 2523 |
1N4305 |
50 V, 500 mW ultra fast low capacitance diode |
BKC International Electronics |
| 2524 |
1N4305 |
Silicon Diode Whiskerless |
Transitron Electronic |
| 2525 |
1N432 |
Silicon Diode Case Style DO-7 |
Transitron Electronic |
| 2526 |
1N434 |
Silicon Diode Case Style DO-7 |
Transitron Electronic |
| 2527 |
1N4370 |
500mW, silicon zener diode. Zener voltage 2.4 V. Test current 20 mA. +-10% standard tolerance. |
Jinan Gude Electronic Device |
| 2528 |
1N4370 |
Silicon Zener Diode 400 Milliwatt Low Voltage 2.4V |
Transitron Electronic |
| 2529 |
1N4370A |
500mW, silicon zener diode. Zener voltage 2.4 V. Test current 20 mA. +-5% tolerance. |
Jinan Gude Electronic Device |
| 2530 |
1N4370A |
Silicon Zener Diode 400 Milliwatt Low Voltage 2.4V, tolerance ±5% |
Transitron Electronic |
| 2531 |
1N4370C |
500mW, silicon zener diode. Zener voltage 2.4 V. Test current 20 mA. +-2% tolerance. |
Jinan Gude Electronic Device |
| 2532 |
1N4370D |
500mW, silicon zener diode. Zener voltage 2.4 V. Test current 20 mA. +-1% tolerance. |
Jinan Gude Electronic Device |
| 2533 |
1N4371 |
500mW SILICON ZENER DIODES |
Jinan Gude Electronic Device |
| 2534 |
1N4371 |
Silicon Zener Diode 400 Milliwatt Low Voltage 2.7V |
Transitron Electronic |
| 2535 |
1N4371A |
500mW, silicon zener diode. Zener voltage 2.7 V. Test current 20 mA. +-5% tolerance. |
Jinan Gude Electronic Device |
| 2536 |
1N4371A |
Silicon Zener Diode 400 Milliwatt Low Voltage 2.7V, tolerance ±5% |
Transitron Electronic |
| 2537 |
1N4371C |
500mW, silicon zener diode. Zener voltage 2.7 V. Test current 20 mA. +-2% tolerance. |
Jinan Gude Electronic Device |
| 2538 |
1N4371D |
500mW, silicon zener diode. Zener voltage 2.7 V. Test current 20 mA. +-1% tolerance. |
Jinan Gude Electronic Device |
| 2539 |
1N4372 |
500mW SILICON ZENER DIODES |
Jinan Gude Electronic Device |
| 2540 |
1N4372 |
Silicon Zener Diode 400 Milliwatt Low Voltage 3.0V |
Transitron Electronic |
| 2541 |
1N4372A |
500mW, silicon zener diode. Zener voltage 3.0 V. Test current 20 mA. +-5% tolerance. |
Jinan Gude Electronic Device |
| 2542 |
1N4372A |
Silicon Zener Diode 400 Milliwatt Low Voltage 3.0V, tolerance ±5% |
Transitron Electronic |
| 2543 |
1N4372C |
500mW, silicon zener diode. Zener voltage 3.0 V. Test current 20 mA. +-2% tolerance. |
Jinan Gude Electronic Device |
| 2544 |
1N4372D |
500mW, silicon zener diode. Zener voltage 3.0 V. Test current 20 mA. +-1% tolerance. |
Jinan Gude Electronic Device |
| 2545 |
1N4446 |
75 V, 500 mW high conductance ultra fast switching diode |
BKC International Electronics |
| 2546 |
1N4446 |
Silicon Diode Whiskerless |
Transitron Electronic |
| 2547 |
1N4447 |
75 V, 500 mW high conductance ultra fast switching diode |
BKC International Electronics |
| 2548 |
1N4447 |
SMALL SIGNAL SWITCHING DIODE |
Chenyi Electronics |
| 2549 |
1N4447 |
SILICON EPITAXIAL PLANAR DIODES |
GOOD-ARK Electronics |
| 2550 |
1N4447 |
SMALL SIGNAL SWITCHING DIODE |
Shanghai Sunrise Electronics |
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