| No. |
Part Name |
Description |
Manufacturer |
| 2551 |
BF222 |
Epitaxial planar NPN transistor, designed for tuners of FM receivers, and features low noise, high gain and excelent forward AGC |
SGS-ATES |
| 2552 |
BF256 |
VHF/UHF Amplifier(N-Channel, Depletion) |
Motorola |
| 2553 |
BF256A |
VHF/UHF Amplifier(N-Channel, Depletion) |
Motorola |
| 2554 |
BF256B |
VHF/UHF Amplifier(N-Channel, Depletion) |
Motorola |
| 2555 |
BF256C |
VHF/UHF Amplifier(N-Channel, Depletion) |
Motorola |
| 2556 |
BF961 |
Dual gate, discharge mode, MOS field controlled tetrode |
Mikroelektronikai Vallalat |
| 2557 |
BF961 |
N-Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode |
TEMIC |
| 2558 |
BF961 |
N-Channel Dual Gate MOS‐Fieldeffect Tetrode, Depletion Mode |
Vishay |
| 2559 |
BF961A |
N-Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode |
Vishay |
| 2560 |
BF961B |
N-Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode |
Vishay |
| 2561 |
BF964S |
N-Channel Dual Gate MOS‐Fieldeffect Tetrode, Depletion Mode |
Vishay |
| 2562 |
BF966S |
N-Channel Dual Gate MOS‐Fieldeffect Tetrode, Depletion Mode |
Vishay |
| 2563 |
BF988 |
N-Channel Dual Gate MOS‐Fieldeffect Tetrode, Depletion Mode |
Vishay |
| 2564 |
BF994S |
N-Channel Dual Gate MOS‐Fieldeffect Tetrode, Depletion Mode |
Vishay |
| 2565 |
BF995 |
N-Channel Dual Gate MOS‐Fieldeffect Tetrode, Depletion Mode |
Vishay |
| 2566 |
BF996S |
N-Channel Dual Gate MOS‐Fieldeffect Tetrode, Depletion Mode |
Vishay |
| 2567 |
BF998 |
N-Channel Dual Gate MOS‐Fieldeffect Tetrode, Depletion Mode |
Vishay |
| 2568 |
BF998R |
N-Channel Dual Gate MOS‐Fieldeffect Tetrode, Depletion Mode |
Vishay |
| 2569 |
BF998RW |
N-Channel Dual Gate MOS‐Fieldeffect Tetrode, Depletion Mode |
Vishay |
| 2570 |
BFG90A |
Silicon planar epitaxial NPN transistor, designed for wideband application in CATV and MATV systems up to 2GHz |
Philips |
| 2571 |
BFQ10 |
Field effect transistor, differential amplifiers |
mble |
| 2572 |
BFQ11 |
Field effect transistor, differential amplifiers |
mble |
| 2573 |
BFQ12 |
Field effect transistor, differential amplifiers |
mble |
| 2574 |
BFQ13 |
Field effect transistor, differential amplifiers |
mble |
| 2575 |
BFQ14 |
Field effect transistor, differential amplifiers |
mble |
| 2576 |
BFQ15 |
Field effect transistor, differential amplifiers |
mble |
| 2577 |
BFQ16 |
Field effect transistor, differential amplifiers |
mble |
| 2578 |
BFQ65 |
NPN microwave NPN transistor, designed for use in the GHz range, very low noise |
Philips |
| 2579 |
BFR91 |
Epitaxial planar NPN transistor, designed for VHF-UHF medium level amplifier up to 1.5GHz |
SGS-ATES |
| 2580 |
BFR91H |
Epitaxial planar NPN transistor, designed for VHF-UHF wide-band application |
SGS-ATES |
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