| No. |
Part Name |
Description |
Manufacturer |
| 2551 |
NDT456P_NL |
P-Channel Enhancement Mode Field Effect Transistor |
Fairchild Semiconductor |
| 2552 |
NTB13N10-D |
Power MOSFET 13 Amps, 100 Volts N-Channel Enhancement Mode D 2 PAK |
ON Semiconductor |
| 2553 |
NTE2378 |
MOSFET N-Channel Enhancement Mode, High Speed Switch |
NTE Electronics |
| 2554 |
NTE2382 |
MOSFET N-Channel Enhancement Mode, High Speed Switch (Compl to NTE2383) |
NTE Electronics |
| 2555 |
NTE2383 |
MOSFET P-Channel Enhancement Mode, High Speed Switch (Compl to NTE2382) |
NTE Electronics |
| 2556 |
NTE2384 |
MOSFET N-Channel Enhancement Mode, High Speed Switch |
NTE Electronics |
| 2557 |
NTE2387 |
MOSFET N-Channel Enhancement Mode, High Speed Switch |
NTE Electronics |
| 2558 |
NTE2388 |
MOSFET N-Channel Enhancement Mode, High Speed Switch |
NTE Electronics |
| 2559 |
NTE2390 |
MOSFET N-Channel Enhancement Mode, High Speed Switch |
NTE Electronics |
| 2560 |
NTE2392 |
MOSFET N-Channel Enhancement Mode, High Speed Switch |
NTE Electronics |
| 2561 |
NTE2393 |
MOSFET N-Channel Enhancement Mode, High Speed Switch |
NTE Electronics |
| 2562 |
NTE2394 |
MOSFET N-Channel Enhancement Mode, High Speed Switch |
NTE Electronics |
| 2563 |
NTE3300 |
Insulated Gate Bipolar Transistor N-Channel Enhancement Mode, High Speed Switch |
NTE Electronics |
| 2564 |
NTE3301 |
Insulated Gate Bipolar Transistor N-Channel Enhancement Mode, High Speed Switch |
NTE Electronics |
| 2565 |
NTE3302 |
Insulated Gate Bipolar Transistor N-Channel Enhancement Mode, High Speed Switch |
NTE Electronics |
| 2566 |
NTE3303 |
Insulated Gate Bipolar Transistor N-Channel Enhancement Mode, High Speed Switch |
NTE Electronics |
| 2567 |
NTE3310 |
Insulated Gate Bipolar Transistor N-Channel Enhancement Mode, High Speed Switch |
NTE Electronics |
| 2568 |
NTE3311 |
Insulated Gate Bipolar Transistor N-Channel Enhancement Mode, High Speed Switch |
NTE Electronics |
| 2569 |
NTE3312 |
Insulated Gate Bipolar Transistor N-Channel Enhancement Mode, High Speed Switch |
NTE Electronics |
| 2570 |
NTE3320 |
Insulated Gate Bipolar Transistor N-Channel Enhancement Mode, High Speed Switch |
NTE Electronics |
| 2571 |
NTE3321 |
Insulated Gate Bipolar Transistor N-Channel Enhancement Mode, High Speed Switch |
NTE Electronics |
| 2572 |
NTE3322 |
Insulated Gate Bipolar Transistor N-Channel Enhancement Mode, High Speed Switch |
NTE Electronics |
| 2573 |
NTE3323 |
Insulated Gate Bipolar Transistor N-Channel Enhancement Mode, High Speed Switch |
NTE Electronics |
| 2574 |
NTMD6N02R2-D |
Power MOSFET 6.0 Amps, 20 Volts N-Channel Enhancement Mode Dual SO-8 Package |
ON Semiconductor |
| 2575 |
NTP52N10 |
N-Channel Enhancement Mode TO-220 |
ON Semiconductor |
| 2576 |
NTP52N10-D |
Power MOSFET 52 Amps, 100 Volts N-Channel Enhancement Mode TO-220 |
ON Semiconductor |
| 2577 |
NTP52N10G |
N-Channel Enhancement Mode TO-220 |
ON Semiconductor |
| 2578 |
NTTD1P02R2-D |
Power MOSFET -1.45 Amps, -20 Volts P-Channel Enhancement Mode Dual Micro8 Package |
ON Semiconductor |
| 2579 |
NTTS2P03R2-D |
Power MOSFET -2.48 Amps, -30 Volts P-Channel Enhancement Mode Single Micro8 Package |
ON Semiconductor |
| 2580 |
P07D03LV |
Dual N-Channel Enhancement Mode Field Effect Transistor |
NIKO-SEM |
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