| No. |
Part Name |
Description |
Manufacturer |
| 2551 |
RSB18VFH |
Bi-directional zener Diode (corresponds to AEC-Q101) |
ROHM |
| 2552 |
RSB18VFHTE-17 |
Bi-directional zener Diode (corresponds to AEC-Q101) |
ROHM |
| 2553 |
RSB18VTE-17 |
Bi-directional zener Diode |
ROHM |
| 2554 |
SB180 |
Through-Hole Schottky Rectifiers |
Diodes |
| 2555 |
SB180 |
SCHOTTKY BARRIER RECTIFIER DIODES |
EIC discrete Semiconductors |
| 2556 |
SB180 |
Schottky Rectifiers |
Fairchild Semiconductor |
| 2557 |
SB180 |
SCHOTTKY BARRIER RECTIFIER |
GOOD-ARK Electronics |
| 2558 |
SB180 |
1 AMPERE SCHOTTKY BARRIER RECTIFIERS(VOLTAGE 50 to 100 Volts CURRENT - 1.0 Ampere) |
Panjit International Inc |
| 2559 |
SB180 |
80 V, 1 A,schottky barrier rectifier |
TRANSYS Electronics Limited |
| 2560 |
SB180 |
1 AMPERE SCHOTTKY BARRIER RECTIFIERS |
TRSYS |
| 2561 |
SB180 |
SCHOTTKY BARRIER RECTIFER |
Zowie Technology Corporation |
| 2562 |
SB180-G |
Schottky Barrier Rectifiers Diodes, VRRM=80V, VR=80V, IO=1A |
Comchip Technology |
| 2563 |
SB180-T |
Through-Hole Schottky Rectifiers |
Diodes |
| 2564 |
SB180E-G |
Schottky Barrier Rectifiers Diodes, VRRM=80V, VR=80V, IO=1A |
Comchip Technology |
| 2565 |
SB180S |
SCHOTTKY BARRIER RECTIFIER |
GOOD-ARK Electronics |
| 2566 |
SB180S |
1 AMPERE SCHOTTKY BARRIER RECTIFIERS(VOLTAGE - 20 to 100 Volts CURRENT - 1.0 Ampere) |
Panjit International Inc |
| 2567 |
SB180S |
80 V, 1 A,schottky barrier rectifier |
TRANSYS Electronics Limited |
| 2568 |
SB180S |
1 AMPERE SCHOTTKY BARRIER RECTIFIERS |
TRSYS |
| 2569 |
SML60B18 |
N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS |
SemeLAB |
| 2570 |
SPB18P06P |
SIPMOS® Parametric Search |
Infineon |
| 2571 |
SPB18P06PSMD |
Low Voltage MOSFETs - Power MOSFET, -60V, D2PAK, RDSon = 0.13 |
Infineon |
| 2572 |
STB185N55F3 |
N-channel 55 V, 3.2 mOhm typ., 120 A STripFET(TM) Power MOSFET in D2PAK package |
ST Microelectronics |
| 2573 |
STB18N20 |
OLD PRODUCT: NOT SUITABLE FOR NEW DESIGN-IN |
SGS Thomson Microelectronics |
| 2574 |
STB18N20 |
N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR |
SGS Thomson Microelectronics |
| 2575 |
STB18N20 |
OLD PRODUCT: NOT SUITABLE FOR NEW DESIGN-IN |
ST Microelectronics |
| 2576 |
STB18N55M5 |
N-channel 550 V, 0.150 Ohm typ., 16 A, MDmesh(TM) V Power MOSFET in D2PAK package |
ST Microelectronics |
| 2577 |
STB18N60M2 |
N-channel 600 V, 0.255 Ohm typ., 13 A MDmesh II Plus(TM) low Qg Power MOSFET in D2PAK package |
ST Microelectronics |
| 2578 |
STB18N65M5 |
N-channel 650 V, 0.198 Ohm typ., 15 A MDmesh(TM) V Power MOSFET in D2PAK package |
ST Microelectronics |
| 2579 |
STB18NF25 |
N-channel 250 V, 0.14 Ohm, 17 A low gate charge STripFET(TM) II Power MOSFET in D2PAK package |
ST Microelectronics |
| 2580 |
STB18NF30 |
Automotive-grade N-channel 330 V, 160 mOhm typ., 18 A STripFET(TM) II Power MOSFET in a D2PAK package |
ST Microelectronics |
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