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Datasheets for DYNAMIC R

Datasheets found :: 6494
Page: | 82 | 83 | 84 | 85 | 86 | 87 | 88 | 89 | 90 |
No. Part Name Description Manufacturer
2551 KM416C1000BT-7 1M x 16Bit CMOS dynamic RAM with fast page mode, 5V, 70ns Samsung Electronic
2552 KM416C1000BTL-5 1M x 16Bit CMOS dynamic RAM with fast page mode, 5V, 50ns Samsung Electronic
2553 KM416C1000BTL-6 1M x 16Bit CMOS dynamic RAM with fast page mode, 5V, 60ns Samsung Electronic
2554 KM416C1000BTL-7 1M x 16Bit CMOS dynamic RAM with fast page mode, 5V, 70ns Samsung Electronic
2555 KM416C1000C 1M x 16Bit CMOS Dynamic RAM with Fast Page Mode Samsung Electronic
2556 KM416C1000CJ-5 1M x 16Bit CMOS dynamic RAM with fast page mode, 5V, 50ns Samsung Electronic
2557 KM416C1000CJ-6 1M x 16Bit CMOS dynamic RAM with fast page mode, 5V, 60ns Samsung Electronic
2558 KM416C1000CJL-5 1M x 16Bit CMOS dynamic RAM with fast page mode, 5V, 50ns Samsung Electronic
2559 KM416C1000CJL-6 1M x 16Bit CMOS dynamic RAM with fast page mode, 5V, 60ns Samsung Electronic
2560 KM416C1000CT-5 1M x 16Bit CMOS dynamic RAM with fast page mode, 5V, 50ns Samsung Electronic
2561 KM416C1000CT-6 1M x 16Bit CMOS dynamic RAM with fast page mode, 5V, 60ns Samsung Electronic
2562 KM416C1000CTL-5 1M x 16Bit CMOS dynamic RAM with fast page mode, 5V, 50ns Samsung Electronic
2563 KM416C1000CTL-6 1M x 16Bit CMOS dynamic RAM with fast page mode, 5V, 60ns Samsung Electronic
2564 KM416C1004C 1M x 16Bit CMOS Dynamic RAM with Extended Data Out Samsung Electronic
2565 KM416C1004CJ-45 1M x 16Bit CMOS dynamic RAM with extended data out, 45ns, VCC=5.0V, refresh period=64ms Samsung Electronic
2566 KM416C1004CJ-5 1M x 16Bit CMOS dynamic RAM with extended data out, 50ns, VCC=5.0V, refresh period=64ms Samsung Electronic
2567 KM416C1004CJ-6 1M x 16Bit CMOS dynamic RAM with extended data out, 60ns, VCC=5.0V, refresh period=64ms Samsung Electronic
2568 KM416C1004CJL-45 1M x 16Bit CMOS dynamic RAM with extended data out, 45ns, VCC=5.0V, self-refresh Samsung Electronic
2569 KM416C1004CJL-5 1M x 16Bit CMOS dynamic RAM with extended data out, 50ns, VCC=5.0V, self-refresh Samsung Electronic
2570 KM416C1004CJL-6 1M x 16Bit CMOS dynamic RAM with extended data out, 60ns, VCC=5.0V, self-refresh Samsung Electronic
2571 KM416C1004CTL-45 1M x 16Bit CMOS dynamic RAM with extended data out, 45ns, VCC=5.0V, self-refresh Samsung Electronic
2572 KM416C1004CTL-5 1M x 16Bit CMOS dynamic RAM with extended data out, 50ns, VCC=5.0V, self-refresh Samsung Electronic
2573 KM416C1004CTL-6 1M x 16Bit CMOS dynamic RAM with extended data out, 60ns, VCC=5.0V, self-refresh Samsung Electronic
2574 KM416C1200B 1M x 16Bit CMOS Dynamic RAM with Fast Page Mode Samsung Electronic
2575 KM416C1200BJ-5 1M x 16Bit CMOS dynamic RAM with fast page mode, 5V, 50ns Samsung Electronic
2576 KM416C1200BJ-6 1M x 16Bit CMOS dynamic RAM with fast page mode, 5V, 60ns Samsung Electronic
2577 KM416C1200BJ-7 1M x 16Bit CMOS dynamic RAM with fast page mode, 5V, 70ns Samsung Electronic
2578 KM416C1200BJL-5 1M x 16Bit CMOS dynamic RAM with fast page mode, 5V, 50ns Samsung Electronic
2579 KM416C1200BJL-6 1M x 16Bit CMOS dynamic RAM with fast page mode, 5V, 60ns Samsung Electronic
2580 KM416C1200BJL-7 1M x 16Bit CMOS dynamic RAM with fast page mode, 5V, 70ns Samsung Electronic


Datasheets found :: 6494
Page: | 82 | 83 | 84 | 85 | 86 | 87 | 88 | 89 | 90 |



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