No. |
Part Name |
Description |
Manufacturer |
2551 |
2SA1256 |
High Frequency Amp Applications |
SANYO |
2552 |
2SA1257 |
High-Voltage Switching, AF Power Amp, 100W Output Predriver Applications |
SANYO |
2553 |
2SA1258 |
60V/3A for High-Speed Drivers Applications |
SANYO |
2554 |
2SA1259 |
60V/5A for High-Speed Drivers Applications |
SANYO |
2555 |
2SA1265 |
Power Amplifier Applications |
TOSHIBA |
2556 |
2SA1289 |
60V/5A High-Speed Switching Applications |
SANYO |
2557 |
2SA1290 |
60V/7A High-Speed Switching Applications |
SANYO |
2558 |
2SA1291 |
60V/10A High-Speed Switching Applications |
SANYO |
2559 |
2SA1292 |
60V/15A High-Speed Switching Applications |
SANYO |
2560 |
2SA1293 |
TRANSISTOR SILICON PNP PITAXIAL TYPE (PCT PROCESS) High Current Switching Applications |
TOSHIBA |
2561 |
2SA1296 |
Transistor Silicon PNP Epitaxial Type (PCT process) Power Amplifier Applications Power Switching Applications |
TOSHIBA |
2562 |
2SA1296 |
Transistor Silicon PNP Epitaxial Type (PCT process) Power Amplifier Applications Power Switching Applications |
TOSHIBA |
2563 |
2SA1297 |
Transistor Silicon PNP Epitaxial Type (PCT process) Power Amplifier Applications Power Switching Applications |
TOSHIBA |
2564 |
2SA1297 |
Transistor Silicon PNP Epitaxial Type (PCT process) Power Amplifier Applications Power Switching Applications |
TOSHIBA |
2565 |
2SA1298 |
Transistor Silicon PNP Epitaxial (PCT process) Low Frequency Power Amplifier Application Power Switching Applications |
TOSHIBA |
2566 |
2SA1300 |
Transistor Silicon PNP Epitaxial Type (PCT process) Strobe Flash Applications Medium Power Amplifier Applications |
TOSHIBA |
2567 |
2SA1300 |
Transistor Silicon PNP Epitaxial Type (PCT process) Strobe Flash Applications Medium Power Amplifier Applications |
TOSHIBA |
2568 |
2SA1304 |
TRANSISTOR (POWER AMPLIFIER/ VERTICAL OUTPUT APPLICATIONS) |
TOSHIBA |
2569 |
2SA1306B |
1.5 A; 200V; 20W; silicon PNP epitaxial type stransistor. For power amplifier applications, driver stage amplifier applications |
TOSHIBA |
2570 |
2SA1306B |
1.5 A; 200V; 20W; silicon PNP epitaxial type stransistor. For power amplifier applications, driver stage amplifier applications |
TOSHIBA |
2571 |
2SA1312 |
Transistor Silicon PNP Epitaxial Type (PCT process) Audio Frequency Low Noise Amplifier Applications |
TOSHIBA |
2572 |
2SA1313 |
Transistor Silicon PNP Epitaxial Type (PCT process) Audio Frequency Low Power Amplifier Applications Driver Stage Amplifier Applications Switching Applications |
TOSHIBA |
2573 |
2SA1313 |
Transistor Silicon PNP Epitaxial Type (PCT process) Audio Frequency Low Power Amplifier Applications Driver Stage Amplifier Applications Switching Applications |
TOSHIBA |
2574 |
2SA1313 |
Transistor Silicon PNP Epitaxial Type (PCT process) Audio Frequency Low Power Amplifier Applications Driver Stage Amplifier Applications Switching Applications |
TOSHIBA |
2575 |
2SA1314 |
Transistor Silicon PNP Epitaxial Type (PCT process) Strobe Flash Applications Audio Power Applications |
TOSHIBA |
2576 |
2SA1314 |
Transistor Silicon PNP Epitaxial Type (PCT process) Strobe Flash Applications Audio Power Applications |
TOSHIBA |
2577 |
2SA1315 |
Transistor Silicon PNP Epitaxial Type (PCT process) Power Amplifier Applications Power Switching Applications |
TOSHIBA |
2578 |
2SA1315 |
Transistor Silicon PNP Epitaxial Type (PCT process) Power Amplifier Applications Power Switching Applications |
TOSHIBA |
2579 |
2SA1316 |
Transistor Silicon PNP Epitaxial Type (PCT process) For Low Noise Audio Amplifier Applications and Recommended for the First Stages of MC Head Amplifiers |
TOSHIBA |
2580 |
2SA1318 |
AF Amp Applications |
SANYO |
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