No. |
Part Name |
Description |
Manufacturer |
2551 |
2N6125 |
Medium Power Linear and Switching Applications |
Boca Semiconductor Corporation |
2552 |
2N6125 |
Epitaxial-base transistor for linear and switching applications |
SGS-ATES |
2553 |
2N6126 |
Medium Power Linear and Switching Applications |
Boca Semiconductor Corporation |
2554 |
2N6126 |
Epitaxial-base transistor for linear and switching applications |
SGS-ATES |
2555 |
2N6292 |
Silicon plastic power NPN transistor. General-purpose switching and amplifier applications. Vceo = 70Vdc, Vcb = 80Vdc, Veb = 5Vdc, Ic = 7Adc, Ib = 3Adc, PD = 40W. |
USHA India LTD |
2556 |
2N6312 |
POWER TRANSISTORS: GENERAL PURPOSE AMPLIFIER AND LOW-FREQUENCY SWITCHING APPLICATION |
MOSPEC Semiconductor |
2557 |
2N6473 |
COMPLEMENTARY SILICON SWITCHING TRANSITORS |
Central Semiconductor |
2558 |
2N6474 |
COMPLEMENTARY SILICON SWITCHING TRANSITORS |
Central Semiconductor |
2559 |
2N6475 |
COMPLEMENTARY SILICON SWITCHING TRANSITORS |
Central Semiconductor |
2560 |
2N6476 |
COMPLEMENTARY SILICON SWITCHING TRANSITORS |
Central Semiconductor |
2561 |
2N6501 |
Quad ceramic switching transistor NPN Silicon |
Motorola |
2562 |
2N6502 |
Dual switching transistor NPN Silicon |
Motorola |
2563 |
2N6503 |
Dual ceramic switching transistor NPN Silicon |
Motorola |
2564 |
2N653 |
PNP Germanium transistor, for high-gain amplifier and switching service in the audio frequency range |
Motorola |
2565 |
2N654 |
PNP Germanium transistor, for high-gain amplifier and switching service in the audio frequency range |
Motorola |
2566 |
2N6542 |
3A power-switching N-P-N transistor. |
General Electric Solid State |
2567 |
2N6544 |
5A power-switching N-P-N transistor. |
General Electric Solid State |
2568 |
2N6545 |
5A power-switching N-P-N transistor. |
General Electric Solid State |
2569 |
2N6546 |
10A power-switching N-P-N transistor. |
General Electric Solid State |
2570 |
2N655 |
PNP Germanium transistor, for high-gain amplifier and switching service in the audio frequency range |
Motorola |
2571 |
2N6619 |
12 V, 30 mA, NPN silicon transistor for low-noise RF broadband amplifier and high-speed switching application |
Siemens |
2572 |
2N6653 |
Silicon high power, high voltage switching NPN transistor - metal case |
IPRS Baneasa |
2573 |
2N6653 |
Silicon NPN High Power High Voltage Switching Transistor |
IPRS Baneasa |
2574 |
2N6653/1 |
Silicon high power, high voltage switching NPN transistor - metal case |
IPRS Baneasa |
2575 |
2N6653/1 |
Silicon NPN High Power High Voltage Switching Transistor |
IPRS Baneasa |
2576 |
2N6653/2 |
Silicon high power, high voltage switching NPN transistor - metal case |
IPRS Baneasa |
2577 |
2N6653/2 |
Silicon NPN High Power High Voltage Switching Transistor |
IPRS Baneasa |
2578 |
2N6653/3 |
Silicon high power, high voltage switching NPN transistor - metal case |
IPRS Baneasa |
2579 |
2N6653/3 |
Silicon NPN High Power High Voltage Switching Transistor |
IPRS Baneasa |
2580 |
2N6653/4 |
Silicon high power, high voltage switching NPN transistor - metal case |
IPRS Baneasa |
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