| No. |
Part Name |
Description |
Manufacturer |
| 2581 |
K4F151611D |
1M x 16Bit CMOS Dynamic RAM with Fast Page Mode |
Samsung Electronic |
| 2582 |
K4F151611D-J |
1M x 16 bit CMOS dynamic RAM with fast page mode. Supply voltage 5V, 1K refresh cycle. |
Samsung Electronic |
| 2583 |
K4F151611D-T |
1M x 16 bit CMOS dynamic RAM with fast page mode. Supply voltage 5V, 1K refresh cycle. |
Samsung Electronic |
| 2584 |
K4F151612D |
1M x 16Bit CMOS Dynamic RAM with Fast Page Mode |
Samsung Electronic |
| 2585 |
K4F151612D-J |
1M x 16 bit CMOS dynamic RAM with fast page mode. Supply voltage 3.3V, 1K refresh cycle. |
Samsung Electronic |
| 2586 |
K4F151612D-T |
1M x 16 bit CMOS dynamic RAM with fast page mode. Supply voltage 3.3V, 1K refresh cycle. |
Samsung Electronic |
| 2587 |
K4F16(7)0811(2)D |
2M x 8Bit CMOS Dynamic RAM with Fast Page Mode Data Sheet |
Samsung Electronic |
| 2588 |
K4F160411C-B50 |
4M x 4bit CMOS dynamic RAM with fast page mode, 5V, 50ns |
Samsung Electronic |
| 2589 |
K4F160411C-B60 |
4M x 4bit CMOS dynamic RAM with fast page mode, 5V, 60ns |
Samsung Electronic |
| 2590 |
K4F160411C-F50 |
4M x 4bit CMOS dynamic RAM with fast page mode, 5V, 50ns |
Samsung Electronic |
| 2591 |
K4F160411C-F60 |
4M x 4bit CMOS dynamic RAM with fast page mode, 5V, 60ns |
Samsung Electronic |
| 2592 |
K4F160411D |
4M x 4Bit CMOS Dynamic RAM with Fast Page Mode |
Samsung Electronic |
| 2593 |
K4F160411D-B |
4M x 4 bit CMOS dynamic RAM with fast page mode. Supply voltage 5V, 2K refresh cycle. |
Samsung Electronic |
| 2594 |
K4F160411D-F |
4M x 4 bit CMOS dynamic RAM with fast page mode. Supply voltage 5V, 2K refresh cycle. |
Samsung Electronic |
| 2595 |
K4F160412C-B50 |
4M x 4bit CMOS dynamic RAM with fast page mode, 3.3V, 50ns |
Samsung Electronic |
| 2596 |
K4F160412C-B60 |
4M x 4bit CMOS dynamic RAM with fast page mode, 3.3V, 60ns |
Samsung Electronic |
| 2597 |
K4F160412C-F50 |
4M x 4bit CMOS dynamic RAM with fast page mode, 3.3V, 50ns |
Samsung Electronic |
| 2598 |
K4F160412C-F60 |
4M x 4bit CMOS dynamic RAM with fast page mode, 3.3V, 60ns |
Samsung Electronic |
| 2599 |
K4F160412D |
4M x 4Bit CMOS Dynamic RAM with Fast Page Mode |
Samsung Electronic |
| 2600 |
K4F160412D-B |
4M x 4 bit CMOS dynamic RAM with fast page mode. Supply voltage 3.3V, 2K refresh cycle. |
Samsung Electronic |
| 2601 |
K4F160412D-F |
4M x 4 bit CMOS dynamic RAM with fast page mode. Supply voltage 3.3V, 2K refresh cycle. |
Samsung Electronic |
| 2602 |
K4F160811D |
2M x 8Bit CMOS Dynamic RAM with Fast Page Mode |
Samsung Electronic |
| 2603 |
K4F160811D-B |
2M x 8 bit CMOS dynamic RAM with fast page mode. Supply voltage 5V, 2K refresh cycle. |
Samsung Electronic |
| 2604 |
K4F160811D-F |
2M x 8 bit CMOS dynamic RAM with fast page mode. Supply voltage 5V, 2K refresh cycle. |
Samsung Electronic |
| 2605 |
K4F160812D |
2M x 8Bit CMOS Dynamic RAM with Fast Page Mode |
Samsung Electronic |
| 2606 |
K4F160812D-B |
2M x 8 bit CMOS dynamic RAM with fast page mode. Supply voltage 3.3V, 2K refresh cycle. |
Samsung Electronic |
| 2607 |
K4F160812D-F |
2M x 8 bit CMOS dynamic RAM with fast page mode. Supply voltage 3.3V, 2K refresh cycle. |
Samsung Electronic |
| 2608 |
K4F170411C-B50 |
4M x 4bit CMOS dynamic RAM with fast page mode, 5V, 50ns |
Samsung Electronic |
| 2609 |
K4F170411C-B60 |
4M x 4bit CMOS dynamic RAM with fast page mode, 5V, 60ns |
Samsung Electronic |
| 2610 |
K4F170411C-F50 |
4M x 4bit CMOS dynamic RAM with fast page mode, 5V, 50ns |
Samsung Electronic |
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