No. |
Part Name |
Description |
Manufacturer |
2581 |
1402F |
200 V single phase bridge 12 A forward current, 150 ns recovery time |
Voltage Multipliers |
2582 |
1402UF |
200 V single phase bridge 12 A forward current, 70 ns recovery time |
Voltage Multipliers |
2583 |
1403 |
Bulk Metal Foil Technology, 4 Pin Transistor Outline Hermetic Resistor Network, Smallest Available Miniature Hermetically-Sealed Network |
Vishay |
2584 |
1403 |
Bulk Metal Foil Technology, 4 Pin Transistor Outline Hermetic Resistor Network, Smallest Available Miniature Hermetically-Sealed Network |
Vishay |
2585 |
1406 |
600 V single phase bridge 12 A forward current, 3000 ns recovery time |
Voltage Multipliers |
2586 |
1406F |
600 V single phase bridge 12 A forward current, 150 ns recovery time |
Voltage Multipliers |
2587 |
1406UF |
600 V single phase bridge 12 A forward current, 70 ns recovery time |
Voltage Multipliers |
2588 |
140CLH |
Aluminum Capacitors SMD (Chip), High Temperature |
Vishay |
2589 |
140RTM |
Aluminum Capacitors Radial, High Temperature Miniature |
Vishay |
2590 |
1410 |
1000 V single phase bridge 12 A forward current, 3000 ns recovery time |
Voltage Multipliers |
2591 |
1410F |
1000 V single phase bridge 12 A forward current, 150 ns recovery time |
Voltage Multipliers |
2592 |
1410UF |
1000 V single phase bridge 12 A forward current, 70 ns recovery time |
Voltage Multipliers |
2593 |
1413 |
Bulk Metal Foil Technology, 8 Pin Transistor Outline Hermetic Resistor Network, Ideal for Uncomplicated Networks |
Vishay |
2594 |
1413 |
Bulk Metal Foil Technology, 8 Pin Transistor Outline Hermetic Resistor Network, Ideal for Uncomplicated Networks |
Vishay |
2595 |
1415-2 |
2 W, 20 V, 1430-1540 MHz common base transistor |
GHz Technology |
2596 |
1415-2 |
2 W, 20 V, 1430-1540 MHz common base transistor |
GHz Technology |
2597 |
1415-7 |
7 W, 20 V, 1430-1540 MHz common base transistor |
GHz Technology |
2598 |
1415-7 |
7 W, 20 V, 1430-1540 MHz common base transistor |
GHz Technology |
2599 |
1416-1 |
Common base, silicon NPN bipolar device optimized for Class C, CW operation in the 1400-1600MHz |
SGS Thomson Microelectronics |
2600 |
1416-1 |
Common base, silicon NPN bipolar device optimized for Class C, CW operation in the 1400-1600MHz |
SGS Thomson Microelectronics |
2601 |
1416-100 |
100 W, 50 V, 1400-1600 MHz common base transistor |
GHz Technology |
2602 |
1416-100 |
100 W, 50 V, 1400-1600 MHz common base transistor |
GHz Technology |
2603 |
1416-3 |
Common base, silicon NPN bipolar device optimized for Class C, CW operation in the 1400-1600MHz |
SGS Thomson Microelectronics |
2604 |
1416-3 |
Common base, silicon NPN bipolar device optimized for Class C, CW operation in the 1400-1600MHz |
SGS Thomson Microelectronics |
2605 |
1417 |
Bulk Metal Foil Technology, 8 Pin Transistor Outline Hermetic Resistor Network, Alternative Layout to Model 1413 |
Vishay |
2606 |
1417 |
Bulk Metal Foil Technology, 8 Pin Transistor Outline Hermetic Resistor Network, Alternative Layout to Model 1413 |
Vishay |
2607 |
1417-12A |
12 W, 28 V, 1400-1700 MHz common base transistor |
GHz Technology |
2608 |
1417-12A |
12 W, 28 V, 1400-1700 MHz common base transistor |
GHz Technology |
2609 |
1417-6A |
6 W, 28 V, 1400-1700 MHz common base transistor |
GHz Technology |
2610 |
1417-6A |
6 W, 28 V, 1400-1700 MHz common base transistor |
GHz Technology |
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