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Datasheets for ,

Datasheets found :: 586258
Page: | 83 | 84 | 85 | 86 | 87 | 88 | 89 | 90 | 91 |
No. Part Name Description Manufacturer
2581 1402F 200 V single phase bridge 12 A forward current, 150 ns recovery time Voltage Multipliers
2582 1402UF 200 V single phase bridge 12 A forward current, 70 ns recovery time Voltage Multipliers
2583 1403 Bulk Metal Foil Technology, 4 Pin Transistor Outline Hermetic Resistor Network, Smallest Available Miniature Hermetically-Sealed Network Vishay
2584 1403 Bulk Metal Foil Technology, 4 Pin Transistor Outline Hermetic Resistor Network, Smallest Available Miniature Hermetically-Sealed Network Vishay
2585 1406 600 V single phase bridge 12 A forward current, 3000 ns recovery time Voltage Multipliers
2586 1406F 600 V single phase bridge 12 A forward current, 150 ns recovery time Voltage Multipliers
2587 1406UF 600 V single phase bridge 12 A forward current, 70 ns recovery time Voltage Multipliers
2588 140CLH Aluminum Capacitors SMD (Chip), High Temperature Vishay
2589 140RTM Aluminum Capacitors Radial, High Temperature Miniature Vishay
2590 1410 1000 V single phase bridge 12 A forward current, 3000 ns recovery time Voltage Multipliers
2591 1410F 1000 V single phase bridge 12 A forward current, 150 ns recovery time Voltage Multipliers
2592 1410UF 1000 V single phase bridge 12 A forward current, 70 ns recovery time Voltage Multipliers
2593 1413 Bulk Metal Foil Technology, 8 Pin Transistor Outline Hermetic Resistor Network, Ideal for Uncomplicated Networks Vishay
2594 1413 Bulk Metal Foil Technology, 8 Pin Transistor Outline Hermetic Resistor Network, Ideal for Uncomplicated Networks Vishay
2595 1415-2 2 W, 20 V, 1430-1540 MHz common base transistor GHz Technology
2596 1415-2 2 W, 20 V, 1430-1540 MHz common base transistor GHz Technology
2597 1415-7 7 W, 20 V, 1430-1540 MHz common base transistor GHz Technology
2598 1415-7 7 W, 20 V, 1430-1540 MHz common base transistor GHz Technology
2599 1416-1 Common base, silicon NPN bipolar device optimized for Class C, CW operation in the 1400-1600MHz SGS Thomson Microelectronics
2600 1416-1 Common base, silicon NPN bipolar device optimized for Class C, CW operation in the 1400-1600MHz SGS Thomson Microelectronics
2601 1416-100 100 W, 50 V, 1400-1600 MHz common base transistor GHz Technology
2602 1416-100 100 W, 50 V, 1400-1600 MHz common base transistor GHz Technology
2603 1416-3 Common base, silicon NPN bipolar device optimized for Class C, CW operation in the 1400-1600MHz SGS Thomson Microelectronics
2604 1416-3 Common base, silicon NPN bipolar device optimized for Class C, CW operation in the 1400-1600MHz SGS Thomson Microelectronics
2605 1417 Bulk Metal Foil Technology, 8 Pin Transistor Outline Hermetic Resistor Network, Alternative Layout to Model 1413 Vishay
2606 1417 Bulk Metal Foil Technology, 8 Pin Transistor Outline Hermetic Resistor Network, Alternative Layout to Model 1413 Vishay
2607 1417-12A 12 W, 28 V, 1400-1700 MHz common base transistor GHz Technology
2608 1417-12A 12 W, 28 V, 1400-1700 MHz common base transistor GHz Technology
2609 1417-6A 6 W, 28 V, 1400-1700 MHz common base transistor GHz Technology
2610 1417-6A 6 W, 28 V, 1400-1700 MHz common base transistor GHz Technology


Datasheets found :: 586258
Page: | 83 | 84 | 85 | 86 | 87 | 88 | 89 | 90 | 91 |



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