| No. |
Part Name |
Description |
Manufacturer |
| 2581 |
BUT11/6 |
Silicon NPN High Voltage Power Transistor |
IPRS Baneasa |
| 2582 |
BUT11/7 |
Silicon NPN High Voltage Power Transistor |
IPRS Baneasa |
| 2583 |
BUT11A |
Silicon NPN High Voltage Power Transistor |
IPRS Baneasa |
| 2584 |
BUW24 |
Silicon multiepitaxial biplanar® NPN high-voltage power transistor |
SGS-ATES |
| 2585 |
BUW25 |
Silicon multiepitaxial biplanar® NPN high-voltage power transistor |
SGS-ATES |
| 2586 |
BUW26 |
Silicon multiepitaxial biplanar® NPN high-voltage power transistor |
SGS-ATES |
| 2587 |
BUX47 |
HIGH VOLTAGE POWER SWITCH |
ST Microelectronics |
| 2588 |
BUX84S |
NPN high voltage Power transistor |
Philips |
| 2589 |
BUY18 |
Silicon Planar NPN, high voltage power transistor |
SGS-ATES |
| 2590 |
BUZ72A |
N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS |
SGS Thomson Microelectronics |
| 2591 |
BUZ80 |
N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR |
SGS Thomson Microelectronics |
| 2592 |
BUZ80FI |
N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR |
SGS Thomson Microelectronics |
| 2593 |
BYS13-90 |
ESD Safe - High Voltage Power Schottky - Rectifier |
Vishay |
| 2594 |
BYX35 |
Silicon High Voltage Diode, intended for the high voltage power supply of X-ray, electron microscope and LASER equipment |
Philips |
| 2595 |
BZW04NN |
TRANSZORB�Transient Voltage Suppressors, Peak Pulse Power 400W |
Vishay |
| 2596 |
BZW04NNB |
TRANSZORB�Transient Voltage Suppressors, Peak Pulse Power 400W |
Vishay |
| 2597 |
BZW04PNN |
TRANSZORB�Transient Voltage Suppressors, Peak Pulse Power 400W |
Vishay |
| 2598 |
BZW04PNNB |
TRANSZORB�Transient Voltage Suppressors, Peak Pulse Power 400W |
Vishay |
| 2599 |
C2M0045170D |
Silicon Carbide Power MOSFET C2M Planar MOSFET Technology N-Channel Enhancement Mode |
Wolfspeed |
| 2600 |
C2M0045170P |
Silicon Carbide Power MOSFET C2M Planar MOSFET Technology N-Channel Enhancement Mode |
Wolfspeed |
| 2601 |
C2M0080170P |
Silicon Carbide Power MOSFET C2M Planar MOSFET Technology N-Channel Enhancement Mode |
Wolfspeed |
| 2602 |
C3350 |
�3kV REGULATED HIGH VOLTAGE POWER SUPPLY |
Hamamatsu Corporation |
| 2603 |
C3360 |
-5kV REGULATED HIGH VOLTAGE POWER SUPPLY |
Hamamatsu Corporation |
| 2604 |
C395-MB290-E400 |
11.0mW; color:UV; 3.7-4.0V; mega bright InGaN LED |
CREE POWER |
| 2605 |
C395-XB290-E400-A |
16.0mW; color:UV; 3.7-4.0V; Xbright InGaN LED |
CREE POWER |
| 2606 |
C395-XB290-E400-B |
16.0mW; color:UV; 3.7-4.0V; Xbright InGaN LED |
CREE POWER |
| 2607 |
C3M0016120D |
Silicon Carbide Power MOSFET C3M Planar MOSFET Technology N-Channel Enhancement Mode |
Wolfspeed |
| 2608 |
C3M0016120K |
Silicon Carbide Power MOSFET C3M Planar MOSFET Technology N-Channel Enhancement Mode |
Wolfspeed |
| 2609 |
C3M0021120D |
Silicon Carbide Power MOSFET C3M Planar MOSFET Technology N-Channel Enhancement Mode |
Wolfspeed |
| 2610 |
C3M0021120K |
Silicon Carbide Power MOSFET C3M Planar MOSFET Technology N-Channel Enhancement Mode |
Wolfspeed |
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