| No. |
Part Name |
Description |
Manufacturer |
| 2581 |
MPS6562 |
25 V, 500 mA, PNP epitaxial silicon transistor |
Samsung Electronic |
| 2582 |
MPS6601 |
25 V, 1000 mA, NPN epitaxial silicon transistor |
Samsung Electronic |
| 2583 |
MPS6602 |
30 V, 1000 mA, NPN epitaxial silicon transistor |
Samsung Electronic |
| 2584 |
MPS6651 |
25 V, 1000 mA, PNP epitaxial silicon transistor |
Samsung Electronic |
| 2585 |
MPS8097 |
60 V, 200 mA, NPN epitaxial silicon transistor |
Samsung Electronic |
| 2586 |
MPS8098 |
60 V, 500 mA, NPN epitaxial silicon transistor |
Samsung Electronic |
| 2587 |
MPS8099 |
60 V, 500 mA, NPN epitaxial silicon transistor |
Samsung Electronic |
| 2588 |
MPS8598 |
60 V, 500 mA, PNP epitaxial silicon transistor |
Samsung Electronic |
| 2589 |
MPS8599 |
60 V, 500 mA, PNP epitaxial silicon transistor |
Samsung Electronic |
| 2590 |
NE461M02 |
NPN EPITAXIAL SILICON TRANSISTOR HIGH FREQUENCY LOW DISTORTION AMPLIFIER |
NEC |
| 2591 |
NE461M02-T1 |
NPN EPITAXIAL SILICON TRANSISTOR HIGH FREQUENCY LOW DISTORTION AMPLIFIER |
NEC |
| 2592 |
NE698M01-T1 |
NPN epitaxial silicon transistor for microwave high-gain amplification. |
NEC |
| 2593 |
NE699M01-T1 |
NPN epitaxial silicon transistor for microwave high-gain amplification. |
NEC |
| 2594 |
NE856M02 |
NPN EPITAXIAL SILICON TRANSISTOR HIGH FREQUENCY LOW DISTORTION AMPLIFIER |
NEC |
| 2595 |
NE856M02-T1 |
NPN EPITAXIAL SILICON TRANSISTOR HIGH FREQUENCY LOW DISTORTION AMPLIFIER |
NEC |
| 2596 |
PJ13003CK |
Emitter base voltage:9V; base current:0.75Amp; NPN epitaxial silicon transistor |
PROMAX-JOHNTON |
| 2597 |
PJ13003CT |
Emitter base voltage:9V; base current:0.75Amp; NPN epitaxial silicon transistor |
PROMAX-JOHNTON |
| 2598 |
PJ13005CZ |
Emitter base voltage:9V; base current:2Amp; NPN epitaxial silicon transistor. For high speed switching, suitable for switching regulator and motor control |
PROMAX-JOHNTON |
| 2599 |
PJ13007CZ |
Emitter base voltage:9V; base current:4Amp; NPN epitaxial silicon transistor. For high speed switching, suitable for switching regulator and motor control |
PROMAX-JOHNTON |
| 2600 |
PJ2N3904CT |
60V; 200mA NPN epitaxial silicon transistor |
PROMAX-JOHNTON |
| 2601 |
PJ2N3904CX |
60V; 200mA NPN epitaxial silicon transistor |
PROMAX-JOHNTON |
| 2602 |
PJ2N3906CT |
40V; 200mA PNP epitaxial silicon transistor |
PROMAX-JOHNTON |
| 2603 |
PJ2N3906CX |
40V; 200mA PNP epitaxial silicon transistor |
PROMAX-JOHNTON |
| 2604 |
PJ2N5401CT |
130V; 600mA PNP epitaxial silicon transistor |
PROMAX-JOHNTON |
| 2605 |
PJ2N5551CT |
180V; 600mA NPN epitaxial silicon transistor |
PROMAX-JOHNTON |
| 2606 |
PJ2N9012CT |
40V; 500mA PNP epitaxial silicon transistor |
PROMAX-JOHNTON |
| 2607 |
PJ2N9012CX |
40V; 500mA PNP epitaxial silicon transistor |
PROMAX-JOHNTON |
| 2608 |
PJ2N9013CT |
40V; 500mA NPN epitaxial silicon transistor |
PROMAX-JOHNTON |
| 2609 |
PJ2N9013CX |
40V; 500mA NPN epitaxial silicon transistor |
PROMAX-JOHNTON |
| 2610 |
PJ2N9014CT |
50V; 100mA NPN epitaxial silicon transistor |
PROMAX-JOHNTON |
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