| No. |
Part Name |
Description |
Manufacturer |
| 2581 |
Q62702-A911 |
Silicon Switching Diodes (Switching applications High breakdown voltage) |
Siemens |
| 2582 |
Q62702-A912 |
Silicon Switching Diodes (Switching applications High breakdown voltage) |
Siemens |
| 2583 |
Q62702-A913 |
Silicon Switching Diodes (Switching applications High breakdown voltage) |
Siemens |
| 2584 |
Q62702-A914 |
Silicon Switching Diodes (Switching applications High breakdown voltage Common cathode) |
Siemens |
| 2585 |
Q62702-A915 |
Silicon Switching Diodes (Switching applications High breakdown voltage Common cathode) |
Siemens |
| 2586 |
Q62702-A916 |
Silicon Switching Diodes (Switching applications High breakdown voltage Common cathode) |
Siemens |
| 2587 |
Q62702-A917 |
Silicon Switching Diodes (Switching applications High breakdown voltage Common cathode) |
Siemens |
| 2588 |
Q62702-A961 |
Silicon Schottky Diodes (For low-loss, fast-recovery, meter protection, bias isolation and clamping applications Integrated diffused guard ring) |
Siemens |
| 2589 |
Q62702-A962 |
Silicon Schottky Diodes (For low-loss, fast-recovery, meter protection, bias isolation and clamping applications Integrated diffused guard ring) |
Siemens |
| 2590 |
Q62702-A963 |
Silicon Schottky Diodes (For low-loss, fast-recovery, meter protection, bias isolation and clamping applications Integrated diffused guard ring) |
Siemens |
| 2591 |
Q62702-A964 |
Silicon Schottky Diodes (For low-loss, fast-recovery, meter protection, bias isolation and clamping applications Integrated diffused guard ring) |
Siemens |
| 2592 |
Q62702-B240 |
Silicon Variable Capacitance Diode (For AM tuning applications Specified tuning range 1 � 8.0 V) |
Siemens |
| 2593 |
Q62702-B479 |
Silicon Variable Capacitance Diode (For AM tuning applications Specified tuning range 1 � 8 V) |
Siemens |
| 2594 |
Q62702-D1316 |
Silicon Schottky Diodes (For low-loss, fast-recovery, meter protection, bias isolation and clamping applications) |
Siemens |
| 2595 |
Q62702-D1321 |
Silicon Schottky Diodes (For low-loss, fast-recovery, meter protection, bias isolation and clamping applications) |
Siemens |
| 2596 |
Q62702-D1322 |
Silicon Schottky Diodes (For low-loss, fast-recovery, meter protection, bias isolation and clamping applications) |
Siemens |
| 2597 |
Q62702-D1323 |
Silicon Schottky Diodes (For low-loss, fast-recovery, meter protection, bias isolation and clamping applications) |
Siemens |
| 2598 |
Q62702-D1347 |
Silicon Schottky Diode (For low-loss, fast-recovery, meter protection, bias isolation and clamping applications) |
Siemens |
| 2599 |
Q62702-F347-S1 |
NPN SILICON TRANSISTOR FOR LOW-NOISE RF BROADBAND AMPLIFIERS AND HIGH-SPEED SWITCHING APPLICATIONS |
Siemens |
| 2600 |
Q62702-F500 |
NPN SILICON TRANSISTOR FOR LOW-NOISE RF BROADBAND AMPLIFIERS AND HIGH-SPEED SWITCHING APPLICATIONS |
Siemens |
| 2601 |
Q62702-S347 |
NPN TRANSISTOR FOR SWITCHING APPLICATIONS |
Siemens |
| 2602 |
Q62702-S348 |
NPN TRANSISTOR FOR SWITCHING APPLICATIONS |
Siemens |
| 2603 |
Q62702-S355 |
NPN TRANSISTOR FOR SWITCHING APPLICATIONS |
Siemens |
| 2604 |
Q62702-S406 |
NPN TRANSISTOR FOR SWITCHING APPLICATIONS |
Siemens |
| 2605 |
Q62702-S407 |
NPN TRANSISTOR FOR SWITCHING APPLICATIONS |
Siemens |
| 2606 |
Q62702-S428 |
NPN TRANSISTOR FOR SWITCHING APPLICATIONS |
Siemens |
| 2607 |
RN1241 |
Transistor Silicon NPN Epitaxial Type (PCT Process) For Muting and Switching Applications |
TOSHIBA |
| 2608 |
RN1242 |
Transistor Silicon NPN Epitaxial Type (PCT Process) For Muting and Switching Applications |
TOSHIBA |
| 2609 |
RN1243 |
Transistor Silicon NPN Epitaxial Type (PCT Process) For Muting and Switching Applications |
TOSHIBA |
| 2610 |
RN1244 |
Transistor Silicon NPN Epitaxial Type (PCT Process) For Muting and Switching Applications |
TOSHIBA |
| | | |
