| No. |
Part Name |
Description |
Manufacturer |
| 2581 |
BDY12-16 |
NPN Silicon Planar Trnasistors |
Siemens |
| 2582 |
BDY12-6 |
NPN transistor for NF power amplifiers and switch applications |
Siemens |
| 2583 |
BDY12-6 |
NPN Silicon Planar Trnasistors |
Siemens |
| 2584 |
BDY13 |
NPN Transistor |
Siemens |
| 2585 |
BDY13 |
NPN transistor for NF power amplifiers and switch applications |
Siemens |
| 2586 |
BDY13 |
NPN Transistor industrial type |
Siemens |
| 2587 |
BDY13 |
NPN Silicon Planar Trnasistors |
Siemens |
| 2588 |
BDY13-10 |
NPN transistor for NF power amplifiers and switch applications |
Siemens |
| 2589 |
BDY13-10 |
NPN Silicon Planar Trnasistors |
Siemens |
| 2590 |
BDY13-16 |
NPN transistor for NF power amplifiers and switch applications |
Siemens |
| 2591 |
BDY13-16 |
NPN Silicon Planar Trnasistors |
Siemens |
| 2592 |
BDY13-6 |
NPN transistor for NF power amplifiers and switch applications |
Siemens |
| 2593 |
BDY13-6 |
NPN Silicon Planar Trnasistors |
Siemens |
| 2594 |
BDY39 |
NPN transistor for high-performance NF power amplifiers |
Siemens |
| 2595 |
BDY39 |
NPN Transistor |
Siemens |
| 2596 |
BDY39 |
NPN Transistor industrial type |
Siemens |
| 2597 |
BDY39 paired |
NPN transistor for high-performance NF power amplifiers |
Siemens |
| 2598 |
BDY39-4 |
NPN transistor for high-performance NF power amplifiers |
Siemens |
| 2599 |
BDY39-6 |
NPN transistor for high-performance NF power amplifiers |
Siemens |
| 2600 |
BDY87 |
NPN Transistor industrial type |
Siemens |
| 2601 |
BDY88 |
NPN Transistor industrial type |
Siemens |
| 2602 |
BDY89 |
NPN Transistor industrial type |
Siemens |
| 2603 |
Bestellbezeichnung |
Siemens Thyristor - type code, order designation |
Siemens |
| 2604 |
Bestellbezeichnung |
Siemens Thyristor - type code, order designation |
Siemens |
| 2605 |
BF1005 |
Silicon N-Channel MOSFET Tetrode (For low noise, high gain controlled input stages up to 1GHz Operating voltage 5V Integrated stabilized bias network) |
Siemens |
| 2606 |
BF1005S |
Silicon N-Channel MOSFET Tetrode (For low noise, high gain controlled input stages up to 1GHz Operating voltage 5V Integrated stabilized bias network) |
Siemens |
| 2607 |
BF1009 |
Silicon N-Channel MOSFET Tetrode (For low noise, high gain controlled input stages up to 1GHz Operating voltage 9 V Integrated stabilized bias network |
Siemens |
| 2608 |
BF1009S |
Silicon N-Channel MOSFET Tetrode (For low noise, high gain controlled input stages up to 1GHz Operating voltage 9V Integrated bias network) |
Siemens |
| 2609 |
BF1012 |
Silicon N-Channel MOSFET Tetrode (For low noise, high gain controlled input stages up to 1GHz Operating voltage 12V Integrated stabilized bias network |
Siemens |
| 2610 |
BF1012S |
Silicon N-Channel MOSFET Tetrode (For low noise, high gain controlled input stages up to 1GHz Operating voltage 5V Integrated stabilized bias network) |
Siemens |
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