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Datasheets for PITAXIAL SILICON T

Datasheets found :: 2745
Page: | 83 | 84 | 85 | 86 | 87 | 88 | 89 | 90 | 91 |
No. Part Name Description Manufacturer
2581 MPS651 NPN Epitaxial Silicon Transistor Fairchild Semiconductor
2582 MPS6513 30 V, 100 mA, NPN epitaxial silicon transistor Samsung Electronic
2583 MPS6517 40 V, 100 mA, PNP epitaxial silicon transistor Samsung Electronic
2584 MPS6520 40 V, 100 mA, NPN epitaxial silicon transistor Samsung Electronic
2585 MPS6521 40 V, 100 mA, NPN epitaxial silicon transistor Samsung Electronic
2586 MPS6522 25 V, 100 mA, PNP epitaxial silicon transistor Samsung Electronic
2587 MPS6523 25 V, 100 mA, PNP epitaxial silicon transistor Samsung Electronic
2588 MPS6560 25 V, 500 mA, NPN epitaxial silicon transistor Samsung Electronic
2589 MPS6562 25 V, 500 mA, PNP epitaxial silicon transistor Samsung Electronic
2590 MPS6601 25 V, 1000 mA, NPN epitaxial silicon transistor Samsung Electronic
2591 MPS6602 30 V, 1000 mA, NPN epitaxial silicon transistor Samsung Electronic
2592 MPS6651 25 V, 1000 mA, PNP epitaxial silicon transistor Samsung Electronic
2593 MPS8097 60 V, 200 mA, NPN epitaxial silicon transistor Samsung Electronic
2594 MPS8098 60 V, 500 mA, NPN epitaxial silicon transistor Samsung Electronic
2595 MPS8099 60 V, 500 mA, NPN epitaxial silicon transistor Samsung Electronic
2596 MPS8598 60 V, 500 mA, PNP epitaxial silicon transistor Samsung Electronic
2597 MPS8599 60 V, 500 mA, PNP epitaxial silicon transistor Samsung Electronic
2598 NE461M02 NPN EPITAXIAL SILICON TRANSISTOR HIGH FREQUENCY LOW DISTORTION AMPLIFIER NEC
2599 NE461M02-T1 NPN EPITAXIAL SILICON TRANSISTOR HIGH FREQUENCY LOW DISTORTION AMPLIFIER NEC
2600 NE698M01-T1 NPN epitaxial silicon transistor for microwave high-gain amplification. NEC
2601 NE699M01-T1 NPN epitaxial silicon transistor for microwave high-gain amplification. NEC
2602 NE856M02 NPN EPITAXIAL SILICON TRANSISTOR HIGH FREQUENCY LOW DISTORTION AMPLIFIER NEC
2603 NE856M02-T1 NPN EPITAXIAL SILICON TRANSISTOR HIGH FREQUENCY LOW DISTORTION AMPLIFIER NEC
2604 PJ13003CK Emitter base voltage:9V; base current:0.75Amp; NPN epitaxial silicon transistor PROMAX-JOHNTON
2605 PJ13003CT Emitter base voltage:9V; base current:0.75Amp; NPN epitaxial silicon transistor PROMAX-JOHNTON
2606 PJ13005CZ Emitter base voltage:9V; base current:2Amp; NPN epitaxial silicon transistor. For high speed switching, suitable for switching regulator and motor control PROMAX-JOHNTON
2607 PJ13007CZ Emitter base voltage:9V; base current:4Amp; NPN epitaxial silicon transistor. For high speed switching, suitable for switching regulator and motor control PROMAX-JOHNTON
2608 PJ2N3904CT 60V; 200mA NPN epitaxial silicon transistor PROMAX-JOHNTON
2609 PJ2N3904CX 60V; 200mA NPN epitaxial silicon transistor PROMAX-JOHNTON
2610 PJ2N3906CT 40V; 200mA PNP epitaxial silicon transistor PROMAX-JOHNTON


Datasheets found :: 2745
Page: | 83 | 84 | 85 | 86 | 87 | 88 | 89 | 90 | 91 |



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