| No. |
Part Name |
Description |
Manufacturer |
| 2581 |
BSX52 |
Silicon NPN Epitaxial Planar Transistor |
IPRS Baneasa |
| 2582 |
BSX52A |
Silicon NPN Epitaxial Planar Transistor |
IPRS Baneasa |
| 2583 |
BSX52B |
Silicon NPN Epitaxial Planar Transistor |
IPRS Baneasa |
| 2584 |
BSX68 |
Silicon NPN epitaxial planar transistor for switching applications |
AEG-TELEFUNKEN |
| 2585 |
BSX69 |
Silicon NPN epitaxial planar transistor for switching applications |
AEG-TELEFUNKEN |
| 2586 |
BSX72 |
Silicon NPN epitaxial planar transistor for high speed switching and RF amplifier circuits |
AEG-TELEFUNKEN |
| 2587 |
BSX75 |
Silicon NPN epitaxial planar transistor for high speed switching and RF amplifier circuits |
AEG-TELEFUNKEN |
| 2588 |
BSX79 |
Silicon NPN Epitaxial Planar Switching Transistor |
AEG-TELEFUNKEN |
| 2589 |
BSX79 |
Silicon NPN epitaxial planar transistor for use in switching applications with high current gain |
AEG-TELEFUNKEN |
| 2590 |
BSX79A |
Silicon NPN Epitaxial Planar Switching Transistor |
AEG-TELEFUNKEN |
| 2591 |
BSX79B |
Silicon NPN Epitaxial Planar Switching Transistor |
AEG-TELEFUNKEN |
| 2592 |
BSX80 |
Silicon NPN epitaxial planar transistor for high speed switching applications. Electrically the BSX80 resembles 2N708 |
AEG-TELEFUNKEN |
| 2593 |
BSX81 |
Silicon NPN epitaxial planar switching transistor with high forward current transfer ratio |
AEG-TELEFUNKEN |
| 2594 |
BSY55 |
Silicon NPN Epitaxial Planar Switching Transistor |
AEG-TELEFUNKEN |
| 2595 |
BSY55 |
Silicon NPN epitaxial planar transistor for high speed switching applications and RF aplifiers |
AEG-TELEFUNKEN |
| 2596 |
BSY56 |
Silicon NPN Epitaxial Planar Switching Transistor |
AEG-TELEFUNKEN |
| 2597 |
BSY56 |
Silicon NPN epitaxial planar transistor for high speed switching applications and RF aplifiers |
AEG-TELEFUNKEN |
| 2598 |
BSY93 |
Silicon NPN epitaxial planar transistor with medium reverse voltage for switching and RF applications |
AEG-TELEFUNKEN |
| 2599 |
BU406 |
NPN Epitaxial Silicon Transistor |
Fairchild Semiconductor |
| 2600 |
BU406 |
400 V, 7 A, NPN epitaxial silicon transistor |
Samsung Electronic |
| 2601 |
BU406 |
NPN EPITAXIAL SILICON TRANSISTOR(HIGH VOLTAGE SWITCHING USE IN HORIZONTAL DEFLECTION OUTPUT STAGE) |
Wing Shing Computer Components |
| 2602 |
BU406D |
NPN EPITAXIAL SILICON TRANSISTOR(HIGH VOLTAGE SWITCHING USE IN HORIZONTAL DEFLECTION OUTPUT STAGE) |
Wing Shing Computer Components |
| 2603 |
BU406H |
NPN Epitaxial Silicon Transistor |
Fairchild Semiconductor |
| 2604 |
BU406H |
400 V, 7 A, NPN epitaxial silicon transistor |
Samsung Electronic |
| 2605 |
BU406H |
NPN epitaxial silicon transistor. High voltage switching for horizontal deflection output stage. Collector-base voltage 400V. Collector-emitter voltage 200V. Emitter-base voltage 6V. |
Wing Shing Computer Components |
| 2606 |
BU406TU |
NPN Epitaxial Silicon Transistor |
Fairchild Semiconductor |
| 2607 |
BU407 |
NPN Epitaxial Silicon Transistor |
Fairchild Semiconductor |
| 2608 |
BU407 |
NPN EPITAXIAL SILICON TRANSISTOR |
Samsung Electronic |
| 2609 |
BU407H |
NPN Epitaxial Silicon Transistor |
Fairchild Semiconductor |
| 2610 |
BU407H |
330 V, 7 A, NPN epitaxial silicon transistor |
Samsung Electronic |
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