No. |
Part Name |
Description |
Manufacturer |
2581 |
ISL9105 |
600mA Low Quiescent Current 1.6MHz High Efficiency Synchronous Buck Regulator |
Intersil |
2582 |
ISL9106 |
1.2A 1.6MHz Low Quiescent Current High Efficiency Synchronous Buck Regulator |
Intersil |
2583 |
ISL9107 |
1.5A 1.6MHz Low Quiescent Current High Efficiency Synchronous Buck Regulator |
Intersil |
2584 |
ISL9108 |
1.5A 1.6MHz Low Quiescent Current High Efficiency Synchronous Buck Regulator |
Intersil |
2585 |
ISL9111 |
Low Input Voltage, High Efficiency Synchronous Boost Converter with 1A Switch |
Intersil |
2586 |
ISL91117 |
High Efficiency Synchronous Boost Converter with 4.2A Switches and Output Disconnect |
Intersil |
2587 |
ISL9111A |
Low Input Voltage, High Efficiency Synchronous Boost Converter with 1A Switch |
Intersil |
2588 |
ISL9113 |
Low Input Voltage and High Efficiency Synchronous Boost Converter with 1.3A Switch |
Intersil |
2589 |
ISL9113A |
Low Input Voltage and High Efficiency Synchronous Boost Converter with 1.3A Switch |
Intersil |
2590 |
JM38510/32301B2A |
Quadruple Bus Buffer Gates With 3-State Outputs |
Texas Instruments |
2591 |
JM38510/32301BCA |
Quadruple Bus Buffer Gates With 3-State Outputs |
Texas Instruments |
2592 |
JM38510/32301BDA |
Quadruple Bus Buffer Gates With 3-State Outputs |
Texas Instruments |
2593 |
JM38510/32301SCA |
Quadruple Bus Buffer Gates With 3-State Outputs |
Texas Instruments |
2594 |
JM38510/32301SDA |
Quadruple Bus Buffer Gates With 3-State Outputs |
Texas Instruments |
2595 |
K1B6416B6C |
4Mx16 bit Synchronous Burst Uni-Transistor Random Access Memory |
Samsung Electronic |
2596 |
K7A801800A |
512Kx18-Bit Synchronous Burst SRAM Data Sheet |
Samsung Electronic |
2597 |
K7A803600A |
256Kx36Bit Synchronous Burst SRAM Data Sheet |
Samsung Electronic |
2598 |
K7B163625A K7B163225A K7B161825A |
512Kx36/x32 & 1Mx18-Bit Synchronous Burst SRAM Data Sheet |
Samsung Electronic |
2599 |
K7B201825A |
128K x 18-Bit Synchronous Burst SRAM Data Sheet |
Samsung Electronic |
2600 |
K7B203625A |
64K x 36-Bit Synchronous Burst SRAM Rev. 3.0 (Dec. 1999) |
Samsung Electronic |
2601 |
K7B403625B K7B403225B K7B401825B |
128Kx36 & 128Kx32 & 256Kx18-Bit Synchronous Burst SRAM Data Sheet |
Samsung Electronic |
2602 |
K7B403625M |
128K x 36-Bit Synchronous Burst SRAM Data Sheet |
Samsung Electronic |
2603 |
K7B801825A |
512Kx18-Bit Synchronous Burst SRAM Data Sheet |
Samsung Electronic |
2604 |
K7B801825B |
256Kx36 & 512Kx18-Bit Synchronous Burst SRAM |
Samsung Electronic |
2605 |
K7B803625A |
256Kx36Bit Synchronous Burst SRAM Data Sheet |
Samsung Electronic |
2606 |
K7B803625B |
256Kx36 & 512Kx18-Bit Synchronous Burst SRAM |
Samsung Electronic |
2607 |
K7B803625B K7B803225B K7B801825B |
256Kx36 & 256Kx32 & 512Kx18-Bit Synchronous Burst SRAM Data Sheet |
Samsung Electronic |
2608 |
KIC7SZ125FU |
BUS Buffer, 3-state output |
Korea Electronics (KEC) |
2609 |
KIC7WZ125 |
SILICON MONOLITHIC CMOS DIGITAL INTEGRATED CIRCUIT(DUAL BUS BUFFER) |
Korea Electronics (KEC) |
2610 |
KIC7WZ125FK |
Dual Bus Buffer |
Korea Electronics (KEC) |
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