No. |
Part Name |
Description |
Manufacturer |
2581 |
MPS4250 |
40 V, PNP epitaxial silicon transistor |
Samsung Electronic |
2582 |
MPS5172 |
25 V, 100 mA, NPN epitaxial silicon transistor |
Samsung Electronic |
2583 |
MPS5179 |
20 V, 50 mA, NPN epitaxial silicon transistor |
Samsung Electronic |
2584 |
MPS651 |
NPN Epitaxial Silicon Transistor |
Fairchild Semiconductor |
2585 |
MPS6513 |
30 V, 100 mA, NPN epitaxial silicon transistor |
Samsung Electronic |
2586 |
MPS6517 |
40 V, 100 mA, PNP epitaxial silicon transistor |
Samsung Electronic |
2587 |
MPS6520 |
40 V, 100 mA, NPN epitaxial silicon transistor |
Samsung Electronic |
2588 |
MPS6521 |
40 V, 100 mA, NPN epitaxial silicon transistor |
Samsung Electronic |
2589 |
MPS6522 |
25 V, 100 mA, PNP epitaxial silicon transistor |
Samsung Electronic |
2590 |
MPS6523 |
25 V, 100 mA, PNP epitaxial silicon transistor |
Samsung Electronic |
2591 |
MPS6560 |
25 V, 500 mA, NPN epitaxial silicon transistor |
Samsung Electronic |
2592 |
MPS6562 |
25 V, 500 mA, PNP epitaxial silicon transistor |
Samsung Electronic |
2593 |
MPS6601 |
25 V, 1000 mA, NPN epitaxial silicon transistor |
Samsung Electronic |
2594 |
MPS6602 |
30 V, 1000 mA, NPN epitaxial silicon transistor |
Samsung Electronic |
2595 |
MPS6651 |
25 V, 1000 mA, PNP epitaxial silicon transistor |
Samsung Electronic |
2596 |
MPS8097 |
60 V, 200 mA, NPN epitaxial silicon transistor |
Samsung Electronic |
2597 |
MPS8098 |
60 V, 500 mA, NPN epitaxial silicon transistor |
Samsung Electronic |
2598 |
MPS8099 |
60 V, 500 mA, NPN epitaxial silicon transistor |
Samsung Electronic |
2599 |
MPS8598 |
60 V, 500 mA, PNP epitaxial silicon transistor |
Samsung Electronic |
2600 |
MPS8599 |
60 V, 500 mA, PNP epitaxial silicon transistor |
Samsung Electronic |
2601 |
NE461M02 |
NPN EPITAXIAL SILICON TRANSISTOR HIGH FREQUENCY LOW DISTORTION AMPLIFIER |
NEC |
2602 |
NE461M02-T1 |
NPN EPITAXIAL SILICON TRANSISTOR HIGH FREQUENCY LOW DISTORTION AMPLIFIER |
NEC |
2603 |
NE698M01-T1 |
NPN epitaxial silicon transistor for microwave high-gain amplification. |
NEC |
2604 |
NE699M01-T1 |
NPN epitaxial silicon transistor for microwave high-gain amplification. |
NEC |
2605 |
NE856M02 |
NPN EPITAXIAL SILICON TRANSISTOR HIGH FREQUENCY LOW DISTORTION AMPLIFIER |
NEC |
2606 |
NE856M02-T1 |
NPN EPITAXIAL SILICON TRANSISTOR HIGH FREQUENCY LOW DISTORTION AMPLIFIER |
NEC |
2607 |
PJ13003CK |
Emitter base voltage:9V; base current:0.75Amp; NPN epitaxial silicon transistor |
PROMAX-JOHNTON |
2608 |
PJ13003CT |
Emitter base voltage:9V; base current:0.75Amp; NPN epitaxial silicon transistor |
PROMAX-JOHNTON |
2609 |
PJ13005CZ |
Emitter base voltage:9V; base current:2Amp; NPN epitaxial silicon transistor. For high speed switching, suitable for switching regulator and motor control |
PROMAX-JOHNTON |
2610 |
PJ13007CZ |
Emitter base voltage:9V; base current:4Amp; NPN epitaxial silicon transistor. For high speed switching, suitable for switching regulator and motor control |
PROMAX-JOHNTON |
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