| No. |
Part Name |
Description |
Manufacturer |
| 2611 |
IS41LV44004-60JI |
3.3V 4M x 4(16-MBIT) dynamic RAM with edo page mode |
Integrated Silicon Solution Inc |
| 2612 |
IS41LV8200-50J |
3.3V 2M x 8(16-MBIT) dynamic RAM with edo page mode |
Integrated Silicon Solution Inc |
| 2613 |
IS41LV8200-50JI |
3.3V 2M x 8(16-MBIT) dynamic RAM with edo page mode |
Integrated Silicon Solution Inc |
| 2614 |
IS41LV8200-60J |
3.3V 2M x 8(16-MBIT) dynamic RAM with edo page mode |
Integrated Silicon Solution Inc |
| 2615 |
IS41LV8200-60JI |
3.3V 2M x 8(16-MBIT) dynamic RAM with edo page mode |
Integrated Silicon Solution Inc |
| 2616 |
IS41LV8512 |
DYNAMIC RAM, EDO DRAM |
ICSI |
| 2617 |
ISL5761_2IA |
210MHz; 10-bit, +3.3V, 130/210+MSPS, commlink high speed D/A converter. For cellular infrastructure- single or multi-carrier: IS-136, IS-95, GSM, EDGE, CDMA2000, WCDMA, TDS-CDMA, BWA structure, etc. |
Intersil |
| 2618 |
ISL5761_2IB |
210MHz; 10-bit, +3.3V, 130/210+MSPS, commlink high speed D/A converter. For cellular infrastructure- single or multi-carrier: IS-136, IS-95, GSM, EDGE, CDMA2000, WCDMA, TDS-CDMA, BWA structure, etc. |
Intersil |
| 2619 |
ISL5861_2IA |
210MHz; 3.6V; 12-bit, +3.3V, 130/210+MSPS, commlink high speed D/A converter. For cellular infrastructure- single or multi-carrier: IS-136, IS-95, GSM, EDGE, CDMA2000, WCDMA, TDS-CDMA, BWA structure, etc. |
Intersil |
| 2620 |
ISL5861_2IB |
210MHz; 3.6V; 12-bit, +3.3V, 130/210+MSPS, commlink high speed D/A converter. For cellular infrastructure- single or multi-carrier: IS-136, IS-95, GSM, EDGE, CDMA2000, WCDMA, TDS-CDMA, BWA structure, etc. |
Intersil |
| 2621 |
ISL5961_2IA |
3.6V; 14-bit, +3.3V, 130/210+MSPS, commlink high speed D/A converter. For cellular infrastructure- single or multi-carrier: IS-136, IS-95, GSM, EDGE, CDMA2000, WCDMA, TDS-CDMA, BWA structure, etc. |
Intersil |
| 2622 |
ISL5961_2IB |
3.6V; 14-bit, +3.3V, 130/210+MSPS, commlink high speed D/A converter. For cellular infrastructure- single or multi-carrier: IS-136, IS-95, GSM, EDGE, CDMA2000, WCDMA, TDS-CDMA, BWA structure, etc. |
Intersil |
| 2623 |
ISL89367 |
High Speed, Dual Channel, 6A, MOSFET Driver With Programmable Rising and Falling Edge Delay Timers |
Intersil |
| 2624 |
ITT5474 |
Dual D-TYPE Edge-Triggered Flip-Flops |
ITT Semiconductors |
| 2625 |
ITT54H74 |
Dual D-TYPE Edge-Triggered Flip-Flops |
ITT Semiconductors |
| 2626 |
ITT7474 |
Dual D-TYPE Edge-Triggered Flip-Flops |
ITT Semiconductors |
| 2627 |
ITT74H74 |
Dual D-TYPE Edge-Triggered Flip-Flops |
ITT Semiconductors |
| 2628 |
IZ74LV174 |
Hex D-type flip-flop with reset; positive edge-trigger |
INTEGRAL Semiconductor Devices |
| 2629 |
JM38510/32503B2A |
Octal D-Type Edge Triggered Flip-Flops with 3-State Outputs |
Texas Instruments |
| 2630 |
JM38510/32503BRA |
Octal D-Type Edge Triggered Flip-Flops with 3-State Outputs |
Texas Instruments |
| 2631 |
JM38510/32503BSA |
Octal D-Type Edge Triggered Flip-Flops with 3-State Outputs |
Texas Instruments |
| 2632 |
JM38510/34101B2A |
Dual D-Type Positive Edge-Triggered Flip-Flop |
National Semiconductor |
| 2633 |
JM38510/34101B2A |
Dual D-Type Positive Edge-Triggered Flip-Flop |
National Semiconductor |
| 2634 |
JM38510/34101BCA |
Dual D-Type Positive Edge-Triggered Flip-Flop |
National Semiconductor |
| 2635 |
JM38510/34101BCA |
Dual D-Type Positive Edge-Triggered Flip-Flop |
National Semiconductor |
| 2636 |
JM38510/34101BDA |
Dual D-Type Positive Edge-Triggered Flip-Flop |
National Semiconductor |
| 2637 |
JM38510/34101BDA |
Dual D-Type Positive Edge-Triggered Flip-Flop |
National Semiconductor |
| 2638 |
JM38510/34101SCA |
Dual D-Type Positive Edge-Triggered Flip-Flop |
National Semiconductor |
| 2639 |
JM38510/34101SCA |
Dual D-Type Positive Edge-Triggered Flip-Flop |
National Semiconductor |
| 2640 |
JM38510/34101SDA |
Dual D-Type Positive Edge-Triggered Flip-Flop |
National Semiconductor |
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