| No. |
Part Name |
Description |
Manufacturer |
| 2611 |
2N6449 |
N-Channel Silicon Junction Field-Effect Transistor |
Texas Instruments |
| 2612 |
2N6450 |
N-Channel Silicon Junction Field-Effect Transistor |
InterFET Corporation |
| 2613 |
2N6450 |
N-CHANNEL SILICON JUNCTION FET |
New Jersey Semiconductor |
| 2614 |
2N6450 |
N-Channel Silicon Junction Field-Effect Transistor |
Texas Instruments |
| 2615 |
2N6451 |
N-Channel Silicon Junction Field-Effect Transistor |
InterFET Corporation |
| 2616 |
2N6451 |
N-CHANNEL SILICON JUNCTION FET |
New Jersey Semiconductor |
| 2617 |
2N6451 |
N-Channel Silicon Junction Field-Effect Transistor |
Texas Instruments |
| 2618 |
2N6452 |
N-Channel Silicon Junction Field-Effect Transistor |
InterFET Corporation |
| 2619 |
2N6452 |
N-CHANNEL SILICON JUNCTION FET |
New Jersey Semiconductor |
| 2620 |
2N6452 |
N-Channel Silicon Junction Field-Effect Transistor |
Texas Instruments |
| 2621 |
2N6453 |
N-Channel Silicon Junction Field-Effect Transistor |
InterFET Corporation |
| 2622 |
2N6453 |
N-Channel Silicon Junction Field-Effect Transistor |
Texas Instruments |
| 2623 |
2N6454 |
N-Channel Silicon Junction Field-Effect Transistor |
InterFET Corporation |
| 2624 |
2N6454 |
N-Channel Silicon Junction Field-Effect Transistor |
Texas Instruments |
| 2625 |
2N6550 |
N-Channel silicon junction field-effect transistor |
InterFET Corporation |
| 2626 |
2N6550 |
N-CHANNEL SILICON JUNCTION FET |
New Jersey Semiconductor |
| 2627 |
2N6649E3 |
BJT( BiPolar Junction Transistor) |
Microsemi |
| 2628 |
2N6650E3 |
BJT( BiPolar Junction Transistor) |
Microsemi |
| 2629 |
2N7370E3 |
BJT( BiPolar Junction Transistor) |
Microsemi |
| 2630 |
2N7371E3 |
BJT( BiPolar Junction Transistor) |
Microsemi |
| 2631 |
2SA12 |
Germanium PNP Alloyed Junction Transistor, intended for use in 455kHz intermediate frequency amplifier |
Hitachi Semiconductor |
| 2632 |
2SA12H |
Germanium PNP Alloyed Junction Transistor, intended for use in 455kHz intermediate frequency amplifier |
Hitachi Semiconductor |
| 2633 |
2SA15 |
Germanium PNP Alloyed Junction Transistor, intended for use in MW RF Amplifier, Frequency Converter |
Hitachi Semiconductor |
| 2634 |
2SA15H |
Germanium PNP Alloyed Junction Transistor, intended for use in MW RF Amplifier |
Hitachi Semiconductor |
| 2635 |
2SA17H |
Germanium PNP Alloyed Junction Transistor, intended for use in Medium Speed Switching |
Hitachi Semiconductor |
| 2636 |
2SA18H |
Germanium PNP Alloyed Junction Transistor, intended for use in Medium Speed Switching |
Hitachi Semiconductor |
| 2637 |
2SA350 |
Germanium PNP Transistor Drift Junction, intended for use in SW RF Amplifier, Oscillator, FM IF Amplifier |
Hitachi Semiconductor |
| 2638 |
2SA351 |
Germanium PNP Transistor Drift Junction, intended for use in SW Oscillator, Frequency Converter |
Hitachi Semiconductor |
| 2639 |
2SA352 |
Germanium PNP Transistor Drift Junction, intended for use in SW Mixer |
Hitachi Semiconductor |
| 2640 |
2SA353 |
Germanium PNP Transistor Drift Junction, intended for use in 455kHz Intermediate Frequency Amplifier |
Hitachi Semiconductor |
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