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Datasheets for AL SILICON TRANS

Datasheets found :: 2785
Page: | 84 | 85 | 86 | 87 | 88 | 89 | 90 | 91 | 92 |
No. Part Name Description Manufacturer
2611 MPS6521 40 V, 100 mA, NPN epitaxial silicon transistor Samsung Electronic
2612 MPS6522 25 V, 100 mA, PNP epitaxial silicon transistor Samsung Electronic
2613 MPS6523 25 V, 100 mA, PNP epitaxial silicon transistor Samsung Electronic
2614 MPS6560 25 V, 500 mA, NPN epitaxial silicon transistor Samsung Electronic
2615 MPS6562 25 V, 500 mA, PNP epitaxial silicon transistor Samsung Electronic
2616 MPS6601 25 V, 1000 mA, NPN epitaxial silicon transistor Samsung Electronic
2617 MPS6602 30 V, 1000 mA, NPN epitaxial silicon transistor Samsung Electronic
2618 MPS6651 25 V, 1000 mA, PNP epitaxial silicon transistor Samsung Electronic
2619 MPS8097 60 V, 200 mA, NPN epitaxial silicon transistor Samsung Electronic
2620 MPS8098 60 V, 500 mA, NPN epitaxial silicon transistor Samsung Electronic
2621 MPS8099 60 V, 500 mA, NPN epitaxial silicon transistor Samsung Electronic
2622 MPS8598 60 V, 500 mA, PNP epitaxial silicon transistor Samsung Electronic
2623 MPS8599 60 V, 500 mA, PNP epitaxial silicon transistor Samsung Electronic
2624 NE461M02 NPN EPITAXIAL SILICON TRANSISTOR HIGH FREQUENCY LOW DISTORTION AMPLIFIER NEC
2625 NE461M02-T1 NPN EPITAXIAL SILICON TRANSISTOR HIGH FREQUENCY LOW DISTORTION AMPLIFIER NEC
2626 NE698M01-T1 NPN epitaxial silicon transistor for microwave high-gain amplification. NEC
2627 NE699M01-T1 NPN epitaxial silicon transistor for microwave high-gain amplification. NEC
2628 NE856M02 NPN EPITAXIAL SILICON TRANSISTOR HIGH FREQUENCY LOW DISTORTION AMPLIFIER NEC
2629 NE856M02-T1 NPN EPITAXIAL SILICON TRANSISTOR HIGH FREQUENCY LOW DISTORTION AMPLIFIER NEC
2630 PJ13003CK Emitter base voltage:9V; base current:0.75Amp; NPN epitaxial silicon transistor PROMAX-JOHNTON
2631 PJ13003CT Emitter base voltage:9V; base current:0.75Amp; NPN epitaxial silicon transistor PROMAX-JOHNTON
2632 PJ13005CZ Emitter base voltage:9V; base current:2Amp; NPN epitaxial silicon transistor. For high speed switching, suitable for switching regulator and motor control PROMAX-JOHNTON
2633 PJ13007CZ Emitter base voltage:9V; base current:4Amp; NPN epitaxial silicon transistor. For high speed switching, suitable for switching regulator and motor control PROMAX-JOHNTON
2634 PJ2N3904CT 60V; 200mA NPN epitaxial silicon transistor PROMAX-JOHNTON
2635 PJ2N3904CX 60V; 200mA NPN epitaxial silicon transistor PROMAX-JOHNTON
2636 PJ2N3906CT 40V; 200mA PNP epitaxial silicon transistor PROMAX-JOHNTON
2637 PJ2N3906CX 40V; 200mA PNP epitaxial silicon transistor PROMAX-JOHNTON
2638 PJ2N5401CT 130V; 600mA PNP epitaxial silicon transistor PROMAX-JOHNTON
2639 PJ2N5551CT 180V; 600mA NPN epitaxial silicon transistor PROMAX-JOHNTON
2640 PJ2N9012CT 40V; 500mA PNP epitaxial silicon transistor PROMAX-JOHNTON


Datasheets found :: 2785
Page: | 84 | 85 | 86 | 87 | 88 | 89 | 90 | 91 | 92 |



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