No. |
Part Name |
Description |
Manufacturer |
2611 |
MPS6521 |
40 V, 100 mA, NPN epitaxial silicon transistor |
Samsung Electronic |
2612 |
MPS6522 |
25 V, 100 mA, PNP epitaxial silicon transistor |
Samsung Electronic |
2613 |
MPS6523 |
25 V, 100 mA, PNP epitaxial silicon transistor |
Samsung Electronic |
2614 |
MPS6560 |
25 V, 500 mA, NPN epitaxial silicon transistor |
Samsung Electronic |
2615 |
MPS6562 |
25 V, 500 mA, PNP epitaxial silicon transistor |
Samsung Electronic |
2616 |
MPS6601 |
25 V, 1000 mA, NPN epitaxial silicon transistor |
Samsung Electronic |
2617 |
MPS6602 |
30 V, 1000 mA, NPN epitaxial silicon transistor |
Samsung Electronic |
2618 |
MPS6651 |
25 V, 1000 mA, PNP epitaxial silicon transistor |
Samsung Electronic |
2619 |
MPS8097 |
60 V, 200 mA, NPN epitaxial silicon transistor |
Samsung Electronic |
2620 |
MPS8098 |
60 V, 500 mA, NPN epitaxial silicon transistor |
Samsung Electronic |
2621 |
MPS8099 |
60 V, 500 mA, NPN epitaxial silicon transistor |
Samsung Electronic |
2622 |
MPS8598 |
60 V, 500 mA, PNP epitaxial silicon transistor |
Samsung Electronic |
2623 |
MPS8599 |
60 V, 500 mA, PNP epitaxial silicon transistor |
Samsung Electronic |
2624 |
NE461M02 |
NPN EPITAXIAL SILICON TRANSISTOR HIGH FREQUENCY LOW DISTORTION AMPLIFIER |
NEC |
2625 |
NE461M02-T1 |
NPN EPITAXIAL SILICON TRANSISTOR HIGH FREQUENCY LOW DISTORTION AMPLIFIER |
NEC |
2626 |
NE698M01-T1 |
NPN epitaxial silicon transistor for microwave high-gain amplification. |
NEC |
2627 |
NE699M01-T1 |
NPN epitaxial silicon transistor for microwave high-gain amplification. |
NEC |
2628 |
NE856M02 |
NPN EPITAXIAL SILICON TRANSISTOR HIGH FREQUENCY LOW DISTORTION AMPLIFIER |
NEC |
2629 |
NE856M02-T1 |
NPN EPITAXIAL SILICON TRANSISTOR HIGH FREQUENCY LOW DISTORTION AMPLIFIER |
NEC |
2630 |
PJ13003CK |
Emitter base voltage:9V; base current:0.75Amp; NPN epitaxial silicon transistor |
PROMAX-JOHNTON |
2631 |
PJ13003CT |
Emitter base voltage:9V; base current:0.75Amp; NPN epitaxial silicon transistor |
PROMAX-JOHNTON |
2632 |
PJ13005CZ |
Emitter base voltage:9V; base current:2Amp; NPN epitaxial silicon transistor. For high speed switching, suitable for switching regulator and motor control |
PROMAX-JOHNTON |
2633 |
PJ13007CZ |
Emitter base voltage:9V; base current:4Amp; NPN epitaxial silicon transistor. For high speed switching, suitable for switching regulator and motor control |
PROMAX-JOHNTON |
2634 |
PJ2N3904CT |
60V; 200mA NPN epitaxial silicon transistor |
PROMAX-JOHNTON |
2635 |
PJ2N3904CX |
60V; 200mA NPN epitaxial silicon transistor |
PROMAX-JOHNTON |
2636 |
PJ2N3906CT |
40V; 200mA PNP epitaxial silicon transistor |
PROMAX-JOHNTON |
2637 |
PJ2N3906CX |
40V; 200mA PNP epitaxial silicon transistor |
PROMAX-JOHNTON |
2638 |
PJ2N5401CT |
130V; 600mA PNP epitaxial silicon transistor |
PROMAX-JOHNTON |
2639 |
PJ2N5551CT |
180V; 600mA NPN epitaxial silicon transistor |
PROMAX-JOHNTON |
2640 |
PJ2N9012CT |
40V; 500mA PNP epitaxial silicon transistor |
PROMAX-JOHNTON |
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