| No. |
Part Name |
Description |
Manufacturer |
| 2611 |
KM44C4100CKL-6 |
4M x 4Bit CMOS dynamic RAM with fast page mode, 5V, 60ns |
Samsung Electronic |
| 2612 |
KM44C4100CS-5 |
4M x 4Bit CMOS dynamic RAM with fast page mode, 5V, 50ns |
Samsung Electronic |
| 2613 |
KM44C4100CS-6 |
4M x 4Bit CMOS dynamic RAM with fast page mode, 5V, 60ns |
Samsung Electronic |
| 2614 |
KM44C4100CSL-5 |
4M x 4Bit CMOS dynamic RAM with fast page mode, 5V, 50ns |
Samsung Electronic |
| 2615 |
KM44C4100CSL-6 |
4M x 4Bit CMOS dynamic RAM with fast page mode, 5V, 60ns |
Samsung Electronic |
| 2616 |
KM44C4104A-5 |
50ns; V(cc/in/out): -1 to +7V; 1W; 4M x 4 bit CMOS dynamic RAM with extended data out |
Samsung Electronic |
| 2617 |
KM44C4104A-6 |
60ns; V(cc/in/out): -1 to +7V; 1W; 4M x 4 bit CMOS dynamic RAM with extended data out |
Samsung Electronic |
| 2618 |
KM44C4104A-7 |
70ns; V(cc/in/out): -1 to +7V; 1W; 4M x 4 bit CMOS dynamic RAM with extended data out |
Samsung Electronic |
| 2619 |
KM44C4104A-8 |
80ns; V(cc/in/out): -1 to +7V; 1W; 4M x 4 bit CMOS dynamic RAM with extended data out |
Samsung Electronic |
| 2620 |
KM44C4104AL-5 |
50ns; V(cc/in/out): -1 to +7V; 1W; 4M x 4 bit CMOS dynamic RAM with extended data out |
Samsung Electronic |
| 2621 |
KM44C4104AL-6 |
60ns; V(cc/in/out): -1 to +7V; 1W; 4M x 4 bit CMOS dynamic RAM with extended data out |
Samsung Electronic |
| 2622 |
KM44C4104AL-7 |
70ns; V(cc/in/out): -1 to +7V; 1W; 4M x 4 bit CMOS dynamic RAM with extended data out |
Samsung Electronic |
| 2623 |
KM44C4104AL-8 |
80ns; V(cc/in/out): -1 to +7V; 1W; 4M x 4 bit CMOS dynamic RAM with extended data out |
Samsung Electronic |
| 2624 |
KM44C4104ALL-5 |
50ns; V(cc/in/out): -1 to +7V; 1W; 4M x 4 bit CMOS dynamic RAM with extended data out |
Samsung Electronic |
| 2625 |
KM44C4104ALL-6 |
60ns; V(cc/in/out): -1 to +7V; 1W; 4M x 4 bit CMOS dynamic RAM with extended data out |
Samsung Electronic |
| 2626 |
KM44C4104ALL-7 |
70ns; V(cc/in/out): -1 to +7V; 1W; 4M x 4 bit CMOS dynamic RAM with extended data out |
Samsung Electronic |
| 2627 |
KM44C4104ALL-8 |
80ns; V(cc/in/out): -1 to +7V; 1W; 4M x 4 bit CMOS dynamic RAM with extended data out |
Samsung Electronic |
| 2628 |
KM44C4104ASL-5 |
50ns; V(cc/in/out): -1 to +7V; 1W; 4M x 4 bit CMOS dynamic RAM with extended data out |
Samsung Electronic |
| 2629 |
KM44C4104ASL-6 |
60ns; V(cc/in/out): -1 to +7V; 1W; 4M x 4 bit CMOS dynamic RAM with extended data out |
Samsung Electronic |
| 2630 |
KM44C4104ASL-7 |
70ns; V(cc/in/out): -1 to +7V; 1W; 4M x 4 bit CMOS dynamic RAM with extended data out |
Samsung Electronic |
| 2631 |
KM44C4104ASL-8 |
80ns; V(cc/in/out): -1 to +7V; 1W; 4M x 4 bit CMOS dynamic RAM with extended data out |
Samsung Electronic |
| 2632 |
KM44V1000D |
1M x 4Bit CMOS Dynamic RAM with Fast Page Mode |
Samsung Electronic |
| 2633 |
KM44V1000DJ-6 |
1M x 4bit CMOS dynamic RAM with fast page mode, 3.3V, 60ns |
Samsung Electronic |
| 2634 |
KM44V1000DJ-7 |
1M x 4bit CMOS dynamic RAM with fast page mode, 3.3V, 70ns |
Samsung Electronic |
| 2635 |
KM44V1000DJL-6 |
1M x 4bit CMOS dynamic RAM with fast page mode, 3.3V, 60ns |
Samsung Electronic |
| 2636 |
KM44V1000DJL-7 |
1M x 4bit CMOS dynamic RAM with fast page mode, 3.3V, 70ns |
Samsung Electronic |
| 2637 |
KM44V1000DT-6 |
1M x 4bit CMOS dynamic RAM with fast page mode, 3.3V, 60ns |
Samsung Electronic |
| 2638 |
KM44V1000DT-7 |
1M x 4bit CMOS dynamic RAM with fast page mode, 3.3V, 70ns |
Samsung Electronic |
| 2639 |
KM44V1000DTL-6 |
1M x 4bit CMOS dynamic RAM with fast page mode, 3.3V, 60ns |
Samsung Electronic |
| 2640 |
KM44V1000DTL-7 |
1M x 4bit CMOS dynamic RAM with fast page mode, 3.3V, 70ns |
Samsung Electronic |
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