No. |
Part Name |
Description |
Manufacturer |
2611 |
STEVAL-ISV018V1 |
300 W PV converter to be integrated into a photovoltaic panel based on SPV1020 and bypass diodes SPV1001N30 and SPV1001N40 |
ST Microelectronics |
2612 |
STPS20L15D |
15V 20A Schottky Discrete Diode in a TO-220AC package |
International Rectifier |
2613 |
STPS20L15T |
15V 20A Schottky Discrete Diode in a TO-220AC package |
International Rectifier |
2614 |
STPS30L60CW |
60V 30A Schottky Discrete Diode in a TO-247AC package |
International Rectifier |
2615 |
STPS40L15CW |
15V 40A Schottky Discrete Diode in a TO-247AC package |
International Rectifier |
2616 |
STPS40L40CW |
40V 40A Schottky Discrete Diode in a TO-247AC package |
International Rectifier |
2617 |
STPS40L45CW |
45V 40A Schottky Discrete Diode in a TO-247AC package |
International Rectifier |
2618 |
T SMD |
Marking for NE32484A part number, 84-SL/84A-SL/84S/83AS NEC package |
NEC |
2619 |
T62 SMD |
Marking for NE02130B part number, 30 NEC package |
NEC |
2620 |
T63 SMD |
Marking for NE02130B part number, 30 NEC package |
NEC |
2621 |
T64 SMD |
Marking for NE02130B part number, 30 NEC package |
NEC |
2622 |
T82 |
Marking for NE68418 part number, 18 NEC package |
NEC |
2623 |
T83 |
Marking for NE68518 part number, 18 NEC package |
NEC |
2624 |
TC1426 |
The TC1426/27/28 are a family of 1.2A dual high- speed drivers. CMOS fabrication is used for low power consumption and high efficiency. These devices are fabricated using an epitaxial layer to effectively short out the intrinsic parasitic |
Microchip |
2625 |
TC1427 |
The TC1426/27/28 are a family of 1.2A dual high- speed drivers. CMOS fabrication is used for low power consumption and high efficiency. These devices are fabricated using an epitaxial layer to effectively short out the intrinsic parasitic |
Microchip |
2626 |
TC1428 |
The TC1426/27/28 are a family of 1.2A dual high- speed drivers. CMOS fabrication is used for low power consumption and high efficiency. These devices are fabricated using an epitaxial layer to effectively short out the intrinsic parasitic |
Microchip |
2627 |
TC2201 |
Plastic Packaged Low Noise PHEMT GaAs FETs |
TRANSCOM |
2628 |
TC2696 |
2 W Flange Ceramic Packaged PHEMT GaAs Power FETs |
TRANSCOM |
2629 |
TDB2912 |
5V -3A Regulator encapsulated in High Dissipation Plastic Package |
ST Microelectronics |
2630 |
TIP100 |
Silicon NPN Darlington Power Transistors TO-220C package |
Savantic |
2631 |
TIP101 |
Silicon NPN Darlington Power Transistors TO-220C package |
Savantic |
2632 |
TIP102 |
Silicon NPN Darlington Power Transistors TO-220C package |
Savantic |
2633 |
TIP105 |
Silicon PNP Darlington Power Transistors TO-220C package |
Savantic |
2634 |
TIP106 |
Silicon PNP Darlington Power Transistors TO-220C package |
Savantic |
2635 |
TIP107 |
Silicon PNP Darlington Power Transistors TO-220C package |
Savantic |
2636 |
TIP110 |
Silicon NPN Darlington Power Transistors TO-220C package |
Savantic |
2637 |
TIP111 |
Silicon NPN Darlington Power Transistors TO-220C package |
Savantic |
2638 |
TIP112 |
Silicon NPN Darlington Power Transistors TO-220C package |
Savantic |
2639 |
TIP115 |
Silicon PNP Darlington Power Transistors TO-220C package |
Savantic |
2640 |
TIP116 |
Silicon PNP Darlington Power Transistors TO-220C package |
Savantic |
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