| No. |
Part Name |
Description |
Manufacturer |
| 2611 |
MR810 |
DIODE FAST RECOVERY RECTIFIER 1KV 2A 2-PIN DO-41 |
New Jersey Semiconductor |
| 2612 |
MR811 |
DIODE FAST RECOVERY RECTIFIER 100V 2A 2-PIN DO-41 |
New Jersey Semiconductor |
| 2613 |
MR812 |
DIODE FAST RECOVERY RECTIFIER 200V 2A 2-PIN DO-41 |
New Jersey Semiconductor |
| 2614 |
MR813 |
DIODE FAST RECOVERY RECTIFIER 1KV 2A 2-PIN DO-41 |
New Jersey Semiconductor |
| 2615 |
MR814 |
DIODE FAST RECOVERY RECTIFIER 400V 2A 2-PIN DO-41 |
New Jersey Semiconductor |
| 2616 |
MR816 |
DIODE FAST RECOVERY RECTIFIER 1KV 2A 2-PIN DO-41 |
New Jersey Semiconductor |
| 2617 |
MR817 |
DIODE FAST RECOVERY RECTIFIER 800V 2A 2-PIN DO-41 |
New Jersey Semiconductor |
| 2618 |
MR818 |
DIODE FAST RECOVERY RECTIFIER 1KV 2A 2-PIN DO-41 |
New Jersey Semiconductor |
| 2619 |
MRF1517T1 |
520MHz; 8W; 7.5V; RF power lateral N-channel enhancement-mode field effect transistor |
Motorola |
| 2620 |
MSK4358 |
25 AMP, 500 VOLT IGBT PLUS DIODE FULLY ISOLATED SMART POWER 3-PHASE MOTOR DRIVE POWER HYBRID |
M.S. Kennedy Corp. |
| 2621 |
MSK4358D |
25 AMP, 500 VOLT IGBT PLUS DIODE FULLY ISOLATED SMART POWER 3-PHASE MOTOR DRIVE POWER HYBRID |
M.S. Kennedy Corp. |
| 2622 |
MSK4358ED |
25 AMP, 500 VOLT IGBT PLUS DIODE FULLY ISOLATED SMART POWER 3-PHASE MOTOR DRIVE POWER HYBRID |
M.S. Kennedy Corp. |
| 2623 |
MSK4358ES |
25 AMP, 500 VOLT IGBT PLUS DIODE FULLY ISOLATED SMART POWER 3-PHASE MOTOR DRIVE POWER HYBRID |
M.S. Kennedy Corp. |
| 2624 |
MSK4358EU |
25 AMP, 500 VOLT IGBT PLUS DIODE FULLY ISOLATED SMART POWER 3-PHASE MOTOR DRIVE POWER HYBRID |
M.S. Kennedy Corp. |
| 2625 |
MSK4358HD |
25 AMP, 500 VOLT IGBT PLUS DIODE FULLY ISOLATED SMART POWER 3-PHASE MOTOR DRIVE POWER HYBRID |
M.S. Kennedy Corp. |
| 2626 |
MSK4358HS |
25 AMP, 500 VOLT IGBT PLUS DIODE FULLY ISOLATED SMART POWER 3-PHASE MOTOR DRIVE POWER HYBRID |
M.S. Kennedy Corp. |
| 2627 |
MSK4358HU |
25 AMP, 500 VOLT IGBT PLUS DIODE FULLY ISOLATED SMART POWER 3-PHASE MOTOR DRIVE POWER HYBRID |
M.S. Kennedy Corp. |
| 2628 |
MSK4358S |
25 AMP, 500 VOLT IGBT PLUS DIODE FULLY ISOLATED SMART POWER 3-PHASE MOTOR DRIVE POWER HYBRID |
M.S. Kennedy Corp. |
| 2629 |
MSK4358U |
25 AMP, 500 VOLT IGBT PLUS DIODE FULLY ISOLATED SMART POWER 3-PHASE MOTOR DRIVE POWER HYBRID |
M.S. Kennedy Corp. |
| 2630 |
MSK4360D |
500 V, 25A IGBT plus diode fully isolated smart power 3-phase motor drive power hybrid |
M.S. Kennedy Corp. |
| 2631 |
MSK4360ED |
500 V, 25A IGBT plus diode fully isolated smart power 3-phase motor drive power hybrid |
M.S. Kennedy Corp. |
| 2632 |
MSK4360ES |
500 V, 25A IGBT plus diode fully isolated smart power 3-phase motor drive power hybrid |
M.S. Kennedy Corp. |
| 2633 |
MSK4360EU |
500 V, 25A IGBT plus diode fully isolated smart power 3-phase motor drive power hybrid |
M.S. Kennedy Corp. |
| 2634 |
MSK4360HU |
500 V, 25A IGBT plus diode fully isolated smart power 3-phase motor drive power hybrid |
M.S. Kennedy Corp. |
| 2635 |
MSK4360S |
500 V, 25A IGBT plus diode fully isolated smart power 3-phase motor drive power hybrid |
M.S. Kennedy Corp. |
| 2636 |
MSK4360U |
500 V, 25A IGBT plus diode fully isolated smart power 3-phase motor drive power hybrid |
M.S. Kennedy Corp. |
| 2637 |
MTD2955V |
P-Channel Enhancement Mode Field Effect Transistor [Life-time buy] |
Fairchild Semiconductor |
| 2638 |
MTD3055V |
N-Channel Enhancement Mode Field Effect Transistor |
Fairchild Semiconductor |
| 2639 |
MTD3055VL |
N-Channel Logic Level Enhancement Mode Field Effect Transistor |
Fairchild Semiconductor |
| 2640 |
MTP2955V |
P-Channel Enhancement Mode Field Effect Transistor |
Fairchild Semiconductor |
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