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Datasheets for PN EPITAXIAL

Datasheets found :: 5217
Page: | 84 | 85 | 86 | 87 | 88 | 89 | 90 | 91 | 92 |
No. Part Name Description Manufacturer
2611 BSX79B Silicon NPN Epitaxial Planar Switching Transistor AEG-TELEFUNKEN
2612 BSX80 Silicon NPN epitaxial planar transistor for high speed switching applications. Electrically the BSX80 resembles 2N708 AEG-TELEFUNKEN
2613 BSX81 Silicon NPN epitaxial planar switching transistor with high forward current transfer ratio AEG-TELEFUNKEN
2614 BSY55 Silicon NPN Epitaxial Planar Switching Transistor AEG-TELEFUNKEN
2615 BSY55 Silicon NPN epitaxial planar transistor for high speed switching applications and RF aplifiers AEG-TELEFUNKEN
2616 BSY56 Silicon NPN Epitaxial Planar Switching Transistor AEG-TELEFUNKEN
2617 BSY56 Silicon NPN epitaxial planar transistor for high speed switching applications and RF aplifiers AEG-TELEFUNKEN
2618 BSY93 Silicon NPN epitaxial planar transistor with medium reverse voltage for switching and RF applications AEG-TELEFUNKEN
2619 BU406 NPN Epitaxial Silicon Transistor Fairchild Semiconductor
2620 BU406 400 V, 7 A, NPN epitaxial silicon transistor Samsung Electronic
2621 BU406 NPN EPITAXIAL SILICON TRANSISTOR(HIGH VOLTAGE SWITCHING USE IN HORIZONTAL DEFLECTION OUTPUT STAGE) Wing Shing Computer Components
2622 BU406D NPN EPITAXIAL SILICON TRANSISTOR(HIGH VOLTAGE SWITCHING USE IN HORIZONTAL DEFLECTION OUTPUT STAGE) Wing Shing Computer Components
2623 BU406H NPN Epitaxial Silicon Transistor Fairchild Semiconductor
2624 BU406H 400 V, 7 A, NPN epitaxial silicon transistor Samsung Electronic
2625 BU406H NPN epitaxial silicon transistor. High voltage switching for horizontal deflection output stage. Collector-base voltage 400V. Collector-emitter voltage 200V. Emitter-base voltage 6V. Wing Shing Computer Components
2626 BU406TU NPN Epitaxial Silicon Transistor Fairchild Semiconductor
2627 BU407 NPN Epitaxial Silicon Transistor Fairchild Semiconductor
2628 BU407 NPN EPITAXIAL SILICON TRANSISTOR Samsung Electronic
2629 BU407H NPN Epitaxial Silicon Transistor Fairchild Semiconductor
2630 BU407H 330 V, 7 A, NPN epitaxial silicon transistor Samsung Electronic
2631 BU407HTU NPN Epitaxial Silicon Transistor Fairchild Semiconductor
2632 BU407TU NPN Epitaxial Silicon Transistor Fairchild Semiconductor
2633 BU408 NPN Epitaxial Silicon Transistor Fairchild Semiconductor
2634 BU408 400 V, 7 A, NPN epitaxial silicon transistor Samsung Electronic
2635 BU408 NPN epitaxial silicon transistor. High voltage switching for horizontal deflection output stage. Collector-base voltage 400V. Collector-emitter voltage 200V. Emitter-base voltage 6V. Wing Shing Computer Components
2636 BU806 NPN Epitaxial Silicon Darlington Transistor Fairchild Semiconductor
2637 BU806 400 V, 8 A, NPN epitaxial silicon darlington transistor Samsung Electronic
2638 BU807 NPN Epitaxial Silicon Darlington Transistor Fairchild Semiconductor
2639 BU807 400 V, 8 A, NPN epitaxial silicon darlington transistor Samsung Electronic
2640 BU807TU NPN Epitaxial Silicon Darlington Transistor Fairchild Semiconductor


Datasheets found :: 5217
Page: | 84 | 85 | 86 | 87 | 88 | 89 | 90 | 91 | 92 |



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