| No. |
Part Name |
Description |
Manufacturer |
| 2611 |
BFY45 |
NPN Transistor industrial type |
Siemens |
| 2612 |
BFY46 |
NPN Silicon High-Frequency Transistor |
Siemens |
| 2613 |
BFY46 |
NPN Transistor industrial type |
Siemens |
| 2614 |
BFY90 |
NPN Transistor |
Siemens |
| 2615 |
BFY90 |
NPN Transistor for antenna amplifiers |
Siemens |
| 2616 |
BFY90 |
NPN Transistor industrial type |
Siemens |
| 2617 |
BFY99 |
NPN Silicon High-Frequency Transistor |
Siemens |
| 2618 |
BGA310 |
Silicon Bipolar MMIC-Amplifier (Cascadable 50 W-gain block 9 dB typical gain at 1.0 GHz 9 dBm typical P-1dB at 1.0 GHz 3 dB-bandwidth: DC to 2.4 GHz) |
Siemens |
| 2619 |
BGA312 |
Silicon Bipolar MMIC-Amplifier (Cascadable 50 W-gain block 11 dB typical gain at 1.0 GHz 9 dBm typical P-1dB at 1.0 GHz) |
Siemens |
| 2620 |
BGA318 |
Silicon Bipolar MMIC-Amplifier (Cascadable 50 W-gain block 16 dB typical gain at 1.0 GHz 12 dBm typical P-1dB at 1.0 GHz) |
Siemens |
| 2621 |
BGA420 |
Si-MMIC-Amplifierin SIEGET 25-Technologie (Cascadable 50 ��-gain block Unconditionally stable) |
Siemens |
| 2622 |
BGA425 |
Si-MMIC-Amplifier in SIEGET 25-Technologie (Multifunctional casc. 50 �� block LNA / MIX Unconditionally stable) |
Siemens |
| 2623 |
BGA427 |
Si-MMIC-Amplifier in SIEGET 25-Technologie (Cascadable 50 W-gain block Unconditionally stable) |
Siemens |
| 2624 |
BGX13F-2H |
IMPATT Diode |
Siemens |
| 2625 |
BGX50A |
Silicon Switching Diode Array (Bridge configuration High-speed switch diode chip) |
Siemens |
| 2626 |
BGY12 |
IMPATT Diode |
Siemens |
| 2627 |
BGY12 |
Avalanche transit time diodes for the C and X bands, datasheet in german language |
Siemens |
| 2628 |
BGY12A |
Avalanche transit time diodes for the C and X bands, datasheet in german language |
Siemens |
| 2629 |
BGY12B |
Avalanche transit time diodes for the C and X bands, datasheet in german language |
Siemens |
| 2630 |
BGY12D-1F |
IMPATT Diode |
Siemens |
| 2631 |
BGY12D-1F |
Avalanche (IMPATT) diode for generation and amplification of microwave-power |
Siemens |
| 2632 |
BGY12E-1G |
IMPATT Diode |
Siemens |
| 2633 |
BGY12E-1G |
Avalanche (IMPATT) diode for generation and amplification of microwave-power |
Siemens |
| 2634 |
BGY12F-2H |
IMPATT Diode |
Siemens |
| 2635 |
BGY12F-2H |
Avalanche (IMPATT) diode for generation and amplification of microwave-power |
Siemens |
| 2636 |
BGY12F-2I |
Avalanche (IMPATT) diode for generation and amplification of microwave-power |
Siemens |
| 2637 |
BGY12F-2J |
IMPATT Diode |
Siemens |
| 2638 |
BGY13 |
IMPATT Diode |
Siemens |
| 2639 |
BGY13 |
Avalanche transit time diodes for the C and X bands, datasheet in german language |
Siemens |
| 2640 |
BGY13A |
Avalanche transit time diodes for the C and X bands, datasheet in german language |
Siemens |
| | | |
