| No. |
Part Name |
Description |
Manufacturer |
| 2611 |
2SC2859 |
Transistor Silicon NPN Epitaxial (PCT process) Audio Frequency Low Power Amplifier Applications Driver Stage Amplifier Applications Switching Applications |
TOSHIBA |
| 2612 |
2SC2860 |
Si NPN Epitaxial Planar |
Panasonic |
| 2613 |
2SC2868 |
Silicon NPN epitaxial transistor (PCT Process) |
TOSHIBA |
| 2614 |
2SC2873 |
Transistor Silicon PNP Epitaxial Type (PCT process) Power Amplifier Applications Power Switching Applications |
TOSHIBA |
| 2615 |
2SC2876 |
Silicon NPN epitaxial planar transistor |
TOSHIBA |
| 2616 |
2SC2877 |
Silicon NPN epitaxial planar audio frequency power transistor |
TOSHIBA |
| 2617 |
2SC2878 |
Transistor Silicon NPN Epitaxial Type For Muting and Switching Applications |
TOSHIBA |
| 2618 |
2SC2879 |
TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2~30MHz SSB LINEAR POWER AMPLIFIER APPLICATIONS (LOW SUPPLY VOLTAGE USE) |
TOSHIBA |
| 2619 |
2SC2881 |
Transistor Silicon NPN Epitaxial Type (PCT process) Voltage Amplifier Applications Power Amplifier Applications |
TOSHIBA |
| 2620 |
2SC2882 |
Transistor Silicon NPN Epitaxial Type (PCT process) Power Amplifier Applications Voltage Amplifier Applications |
TOSHIBA |
| 2621 |
2SC2883 |
TRANSISTOR SILICON NPN EPITAXIAL TYPE (PCT PROCESS) AUDIO POWER AMPLIFIER APPLICATIONS |
TOSHIBA |
| 2622 |
2SC2884 |
TRANSISTOR SILICON NPN EPITAXIAL TYPE (PCT PROCESS) AUDIO POWER AMPLIFIER APPLICATIONS |
TOSHIBA |
| 2623 |
2SC288A(I*B) |
2SC288A(I·B) NPN silicon epitaxial transistor DISK MOLD for UHF oscillator |
NEC |
| 2624 |
2SC2904 |
RF POWER TRANSISTOR NPN EPITAXIAL PLANAR TYPE |
Mitsubishi Electric Corporation |
| 2625 |
2SC2905 |
RF POWER TRANSISTOR NPN EPITAXIAL PLANAR TYPE |
Mitsubishi Electric Corporation |
| 2626 |
2SC2909 |
NPN Epitaxial Planar Silicon Transistors High-Voltage Switching AF 60W Predriver Applications |
SANYO |
| 2627 |
2SC2910 |
NPN Epitaxial Planar Silicon Transistors High-Voltage Switching Audio 80W Output Predriver Applications |
SANYO |
| 2628 |
2SC2911 |
NPN Epitaxial Planar Silicon Transistors 160V/140mA High-Voltage Switching and AF 100W Predriver Applications |
SANYO |
| 2629 |
2SC2922 |
Silicon Epitaxial Planar Transistor(GENERAL DESCRIPTION) |
Wing Shing Computer Components |
| 2630 |
2SC2932 |
RF POWER TRANSISTOR NPN EPITAXIAL PLANAR TYPE |
Mitsubishi Electric Corporation |
| 2631 |
2SC2933 |
RF POWER TRANSISTOR NPN EPITAXIAL PLANAR TYPE |
Mitsubishi Electric Corporation |
| 2632 |
2SC2946 |
NPN SILICON EPITAXIAL TRANSISTOR MP-3 |
NEC |
| 2633 |
2SC29461 |
NPN SILICON EPITAXIAL TRANSISTOR MP-3 |
NEC |
| 2634 |
2SC2954 |
NPN SILICON EPITAXIAL TRANSISTOR POWER MINI MOLD |
NEC |
| 2635 |
2SC2960 |
NPN Epitaxial Planar Silicon Transistors High-Speed Switching Applications |
SANYO |
| 2636 |
2SC2982 |
Transistor Silicon NPN Epitaxial Type (PCT process) Storobo Flash Applications Medium Power Amplifier Applications |
TOSHIBA |
| 2637 |
2SC2983 |
Transistor Silicon NPN Epitaxial Type (PCT process) Power Amplifier Applications Driver Stage Amplifier Applications |
TOSHIBA |
| 2638 |
2SC2986 |
Silicon NPN epitaxial transistor (PCT Process) |
TOSHIBA |
| 2639 |
2SC2987 |
PNP SILICON EPITAXIAL/NPN SILICON TRIPLE DIFFUSED TRANSISTOR |
Unknow |
| 2640 |
2SC2987A |
PNP SILICON EPITAXIAL/NPN SILICON TRIPLE DIFFUSED TRANSISTOR |
Unknow |
| | | |
