| No. |
Part Name |
Description |
Manufacturer |
| 2611 |
1S3047A |
1W Zener diode 47V, ±5% tolerance |
Texas Instruments |
| 2612 |
1S3051A |
1W Zener diode 51V, ±5% tolerance |
Texas Instruments |
| 2613 |
1S3056A |
1W Zener diode 56V, ±5% tolerance |
Texas Instruments |
| 2614 |
1S3062A |
1W Zener diode 62V, ±5% tolerance |
Texas Instruments |
| 2615 |
1S3068A |
1W Zener diode 68V, ±5% tolerance |
Texas Instruments |
| 2616 |
1S3075A |
1W Zener diode 75V, ±5% tolerance |
Texas Instruments |
| 2617 |
1S3082A |
1W Zener diode 82V, ±5% tolerance |
Texas Instruments |
| 2618 |
1S3091A |
1W Zener diode 91V, ±5% tolerance |
Texas Instruments |
| 2619 |
1S310 |
Silicon Diffused Junction Diode, VR(peak)=-50V, intended for use as a Rectifier for Power Source |
Hitachi Semiconductor |
| 2620 |
1S3100A |
1W Zener diode 100V, ±5% tolerance |
Texas Instruments |
| 2621 |
1S310H |
Silicon Diffused Junction Diode, VR(peak)=-50V, intended for use as a Rectifier for Power Source |
Hitachi Semiconductor |
| 2622 |
1S311 |
Silicon Diffused Junction Diode, VR(peak)=-100V, intended for use as a Rectifier for Power Source |
Hitachi Semiconductor |
| 2623 |
1S3110A |
1W Zener diode 110V, ±5% tolerance |
Texas Instruments |
| 2624 |
1S311H |
Silicon Diffused Junction Diode, VR(peak)=-100V, intended for use as a Rectifier for Power Source |
Hitachi Semiconductor |
| 2625 |
1S312 |
Silicon Diffused Junction Diode, VR(peak)=-200V, intended for use as a Rectifier for Power Source |
Hitachi Semiconductor |
| 2626 |
1S3120A |
1W Zener diode 120V, ±5% tolerance |
Texas Instruments |
| 2627 |
1S312H |
Silicon Diffused Junction Diode, VR(peak)=-200V, intended for use as a Rectifier for Power Source |
Hitachi Semiconductor |
| 2628 |
1S313 |
Silicon Diffused Junction Diode, VR(peak)=-300V, intended for use as a Rectifier for Power Source |
Hitachi Semiconductor |
| 2629 |
1S3130A |
1W Zener diode 130V, ±5% tolerance |
Texas Instruments |
| 2630 |
1S313H |
Silicon Diffused Junction Diode, VR(peak)=-300V, intended for use as a Rectifier for Power Source |
Hitachi Semiconductor |
| 2631 |
1S314 |
Silicon Diffused Junction Diode, VR(peak)=-400V, intended for use as a Rectifier for Power Source |
Hitachi Semiconductor |
| 2632 |
1S314H |
Silicon Diffused Junction Diode, VR(peak)=-400V, intended for use as a Rectifier for Power Source |
Hitachi Semiconductor |
| 2633 |
1S315 |
Silicon Diffused Junction Diode, VR(peak)=-500V, intended for use as a Rectifier for Power Source |
Hitachi Semiconductor |
| 2634 |
1S3150A |
1W Zener diode 150V, ±5% tolerance |
Texas Instruments |
| 2635 |
1S315H |
Silicon Diffused Junction Diode, VR(peak)=-500V, intended for use as a Rectifier for Power Source |
Hitachi Semiconductor |
| 2636 |
1S3160A |
1W Zener diode 160V, ±5% tolerance |
Texas Instruments |
| 2637 |
1S3180A |
1W Zener diode 180V, ±5% tolerance |
Texas Instruments |
| 2638 |
1S3200A |
1W Zener diode 200V, ±5% tolerance |
Texas Instruments |
| 2639 |
1S410R |
Diffused silicon rectifier 3A 100V, reverse polarity |
Texas Instruments |
| 2640 |
1S411R |
Diffused silicon rectifier 3A 200V, reverse polarity |
Texas Instruments |
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