| No. |
Part Name |
Description |
Manufacturer |
| 26221 |
MH3ST2 |
Information for designers |
Tesla Elektronicke |
| 26222 |
MH8224 |
Clock and excitation circuit |
Tesla Elektronicke |
| 26223 |
MH8841AE |
6V; 10mA; calling number identification circuit. For feature phone, phone set adjunct boxes, FAX machines, telephone answering machines, database query systems |
Mitel Semiconductor |
| 26224 |
MH8841AN |
6V; 10mA; calling number identification circuit. For feature phone, phone set adjunct boxes, FAX machines, telephone answering machines, database query systems |
Mitel Semiconductor |
| 26225 |
MH8841AS |
6V; 10mA; calling number identification circuit. For feature phone, phone set adjunct boxes, FAX machines, telephone answering machines, database query systems |
Mitel Semiconductor |
| 26226 |
MH8843AE |
Calling number identification circuit. For feature phone, phone set adjunct boxes, FAX machines, telephone answering machines, database query systems |
Mitel Semiconductor |
| 26227 |
MH8843AS |
Calling number identification circuit. For feature phone, phone set adjunct boxes, FAX machines, telephone answering machines, database query systems |
Mitel Semiconductor |
| 26228 |
MH88617 |
Short loop SLIC with 2-4 wire conversion, Programmable line impedance, ringing amplification and On-hook transmission for DID |
Zarlink Semiconductor |
| 26229 |
MH89101 |
Passive Line Termination Circuit |
Mitel Semiconductor |
| 26230 |
MH89101 |
Passive Line Termination Circuit |
Zarlink Semiconductor |
| 26231 |
MHB93448C |
Information for designers |
Tesla Elektronicke |
| 26232 |
MHB93451C |
Information for designers |
Tesla Elektronicke |
| 26233 |
MHC93448C |
Information for designers |
Tesla Elektronicke |
| 26234 |
MHC93451C |
Information for designers |
Tesla Elektronicke |
| 26235 |
MICROMODULES |
MEMORY MICROMODULES GENERAL INFORMATION FOR D1, D2 AND C PACKAGING |
ST Microelectronics |
| 26236 |
MICRORAM |
Output Ripple Attenuation Module |
Vicor Corporation |
| 26237 |
MJB18004D2T4-D |
High Speed, High Gain Bipolar NPN Power Transistor with Integrated Collector-Emitter Diode and Built-in Efficient Antisaturation Network D2PAK For Surface Mount POWER TRANSISTORS 5 AMPERES 1000 VOLTS 75 WATTS |
ON Semiconductor |
| 26238 |
MJD18002D2-D |
Bipolar NPN Transistor High Speed, High Gain Bipolar NPN Power Transistor with Integrated Collector-Emitter Diode and Built-In Efficient Antisaturation Network |
ON Semiconductor |
| 26239 |
MJE18002D2 |
High Speed, High Gain Bipolar NPN Power Transistor with Integrated Collector-Emitter Diode and Built-In Efficient Antisaturation Network |
ON Semiconductor |
| 26240 |
MJE18002D2-D |
High Speed, High Gain Bipolar NPN Power Transistor with Integrated Collector-Emitter Diode and Built-in Efficient Antisaturation Network POWER TRANSISTORS 2 AMPERES 1000 VOLTS 50 WATTS |
ON Semiconductor |
| 26241 |
MJE18004D2 |
High Speed, High Gain Bipolar NPN Power Transistor with Integrated Collector-Emitter Diode and Built-in Efficient Antisaturation ... |
ON Semiconductor |
| 26242 |
MJE18004D2 |
High Speed, High Gain Bipolar NPN Power Transistor with Integrated Collector-Emitter Diode and Built-in Efficient Antisaturation ... |
ON Semiconductor |
| 26243 |
MJE18004D2-D |
High Speed, High Gain Bipolar NPN Power Transistor with Integrated Collector-Emitter Diode and Built-in Efficient Antisaturation Network POWER TRANSISTORS 5 AMPERES 1000 VOLTS 75 WATTS |
ON Semiconductor |
| 26244 |
ML1000605D |
5W Total Output Power 100 Vin +/-15 Vout Dual DC-DC Radiation Hardened Converter in a ML Package. |
International Rectifier |
| 26245 |
ML1012R |
LASER DIODES FOR OPTICAL INFORMATION SYSTEMS |
Mitsubishi Electric Corporation |
| 26246 |
ML1013 |
FOR OPTICAL INFORMATION SYSTEM�� |
Mitsubishi Electric Corporation |
| 26247 |
ML1013R |
LASER DIODES FOR OPTICAL INFORMATION SYSTEMS |
Mitsubishi Electric Corporation |
| 26248 |
ML1016R |
LASER DIODES FOR OPTICAL INFORMATION SYSTEMS |
Mitsubishi Electric Corporation |
| 26249 |
ML101J10 |
LASER DIODES FOR OPTICAL INFORMATION SYSTEMS |
Mitsubishi Electric Corporation |
| 26250 |
ML101J14 |
LASER DIODES FOR OPTICAL INFORMATION SYSTEMS |
Mitsubishi Electric Corporation |
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