| No. |
Part Name |
Description |
Manufacturer |
| 2641 |
2SB833 |
Silicon PNP triple diffused darlington power, high current switching transistor |
TOSHIBA |
| 2642 |
2SB892 |
PNP Epitaxial Planar Silicon Darlington Transistors Large-Current Switching Applications |
SANYO |
| 2643 |
2SB903 |
30V/12A High-Speed Switching Applications |
SANYO |
| 2644 |
2SB904 |
PNP Epitaxial Planar Silicon Transistors 30V/12A High-Speed Switching Applications |
SANYO |
| 2645 |
2SB907 |
Transistor Silicon PNP Epitaxial Type (PCT process) Switching Applications Hammer Drive, Pulse Motor Drive Applications Power Amplifier Applications |
TOSHIBA |
| 2646 |
2SB908 |
Transistor Silicon PNP Epitaxial Type (PCT process) Switching Applications Hammer Drive, Pulse Motor Drive Applications Power Amplifier Applications |
TOSHIBA |
| 2647 |
2SB919 |
PNP Epitaxial Planar Silicon Transistors 30V/8A High-Speed Switching Applications |
SANYO |
| 2648 |
2SB920 |
80V/5A Switching Applications |
SANYO |
| 2649 |
2SB920L |
PNP Epitaxial Planar Silicon Transistors 80V/5A Switching Applications |
SANYO |
| 2650 |
2SB921 |
80V/7A Switching Applications |
SANYO |
| 2651 |
2SB921L |
PNP Epitaxial Planar Silicon Transistors 80V/7A Switching Applications |
SANYO |
| 2652 |
2SB922L |
PNP Epitaxial Planar Silicon Transistors 80V/12A Switching Applications |
SANYO |
| 2653 |
2SB935 |
Silicon PNP epitaxial planar type(For low-voltage switching) |
Panasonic |
| 2654 |
2SB935A |
Silicon PNP epitaxial planar type(For low-voltage switching) |
Panasonic |
| 2655 |
2SB943 |
Silicon PNP epitaxial planar type(For power switching) |
Panasonic |
| 2656 |
2SB986 |
PNP Epitaxial Planar Silicon Darlington Transistors 50V/4A Switching Applications |
SANYO |
| 2657 |
2SB992 |
Silicon PNP triple diffused high current switching power transistor, complementary to 2SD1362 |
TOSHIBA |
| 2658 |
2SB993 |
Silicon PNP triple diffused high current switching power transistor |
TOSHIBA |
| 2659 |
2SB997 |
Silicon PNP triple diffused darlington power switching transistor |
TOSHIBA |
| 2660 |
2SB998 |
Silicon PNP triple diffused darlington power switching transistor |
TOSHIBA |
| 2661 |
2SB999 |
Silicon PNP triple diffused darlington power switching transistor |
TOSHIBA |
| 2662 |
2SC1008 |
Low frequency amplifier medium speed switching. Collector-base voltage Vcbo = 80V. Collector-emitter voltage Vceo = 60V. Emitter-base voltage Vebo = 8V. Collector dissipation Pc(max) = 800mW. Collector current Ic = 700mA. |
USHA India LTD |
| 2663 |
2SC101 |
High Power Switching Transistor |
TOSHIBA |
| 2664 |
2SC102 |
High Power Switching Transistor |
TOSHIBA |
| 2665 |
2SC103A |
High-Speed Switching Transistor |
TOSHIBA |
| 2666 |
2SC1055H |
Transistor Silicon NPN Triple Diffused, intended for use in Power Switching Regulator |
Hitachi Semiconductor |
| 2667 |
2SC106 |
High-Speed Switching Transistor |
TOSHIBA |
| 2668 |
2SC107 |
High-Speed Switching Transistor |
TOSHIBA |
| 2669 |
2SC108 |
High-Speed Switching Transistor |
TOSHIBA |
| 2670 |
2SC108 |
High Voltage Switching Transistor |
TOSHIBA |
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