No. |
Part Name |
Description |
Manufacturer |
2641 |
2N4987 |
Planar monolithic silicon unilateral switch. 30V, 1A. |
General Electric Solid State |
2642 |
2N4988 |
Planar monolithic silicon unilateral switch. 30V, 1A. |
General Electric Solid State |
2643 |
2N4989 |
Planar monolithic silicon unilateral switch. 30V, 1A. |
General Electric Solid State |
2644 |
2N4990 |
Planar monolithic silicon unilateral switch. 30V, 1A. |
General Electric Solid State |
2645 |
2N4991 |
Planar monolithic silicon bilateral transistor. 1A. |
General Electric Solid State |
2646 |
2N4992 |
Planar monolithic silicon bilateral transistor. 1A. |
General Electric Solid State |
2647 |
2N5038 |
High current, high power, high speed silicon N-P-N planar transistor. |
General Electric Solid State |
2648 |
2N5038 |
Silicon planar multiepitaxial NPN transistor |
SGS-ATES |
2649 |
2N5039 |
High current, high power, high speed silicon N-P-N planar transistor. |
General Electric Solid State |
2650 |
2N5039 |
Silicon planar multiepitaxial NPN transistor |
SGS-ATES |
2651 |
2N5109 |
Silicon NPN Epitaxial-Planar HF Transistor |
IPRS Baneasa |
2652 |
2N5109 |
Epitaxial planar NPN transistor, designed for CATV-MATV amplifier applications over a wide frequency range (40 to 860MHz) |
SGS-ATES |
2653 |
2N5109A |
Silicon NPN Epitaxial-Planar HF Transistor |
IPRS Baneasa |
2654 |
2N5109B |
Silicon NPN Epitaxial-Planar HF Transistor |
IPRS Baneasa |
2655 |
2N5179 |
NPN SILICON PLANAR TRANSISTOR |
Boca Semiconductor Corporation |
2656 |
2N5179 |
Silicon NPN Epitaxial Planar RF Transistor for UHF Applications in Military Communications and Industrial Equipment |
RCA Solid State |
2657 |
2N5179 |
Epitaxial planar NPN transistor intended for low-noise tuned-amplifier and converter applications up to 500MHz |
SGS-ATES |
2658 |
2N5180 |
Silicon NPN Epitaxial Planar RF Transistor |
RCA Solid State |
2659 |
2N5202 |
HIGH SPEED EPITAXIAL COLLECTOR SILICON NPN PLANAR TRANSISTORS |
General Electric Solid State |
2660 |
2N5232 |
Planar epitaxial passivated NPN silicon transistor. 50V, 100mA. |
General Electric Solid State |
2661 |
2N5232A |
Planar epitaxial passivated NPN silicon transistor. 50V, 100mA. |
General Electric Solid State |
2662 |
2N5249 |
Planar epitaxial passivated NPN silicon transistor. 50V, 100mA. |
General Electric Solid State |
2663 |
2N5249A |
Planar epitaxial passivated NPN silicon transistor. 50V, 100mA. |
General Electric Solid State |
2664 |
2N5302 |
NPN PLANAR SILICON TRANSISTOR(AUDIO POWER AMPLIFIER DC TO DC CONVERTER) |
Wing Shing Computer Components |
2665 |
2N5306 |
Planar epitaxial passivated NPN silicon Darlington transistor. 25V, 300mA. |
General Electric Solid State |
2666 |
2N5307 |
Planar epitaxial passivated NPN silicon Darlington transistor. 40V, 300mA. |
General Electric Solid State |
2667 |
2N5308 |
Planar epitaxial passivated NPN silicon Darlington transistor. 40V, 300mA. |
General Electric Solid State |
2668 |
2N5308A |
Planar epitaxial passivated NPN silicon Darlington transistor. 40V, 300mA. |
General Electric Solid State |
2669 |
2N5336 |
Silicon epitaxial planar NPN transistor |
SGS-ATES |
2670 |
2N5336 |
Planar transistor for switching applications |
SGS-ATES |
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