| No. |
Part Name |
Description |
Manufacturer |
| 2641 |
2W04G |
Bridge Rectifiers (Glass Passivated) |
Fairchild Semiconductor |
| 2642 |
2W04G |
2 AMP GLASS PASSIVATED SINGLE-PHASE BRIDGE RECTIFIER |
Fuji Electric |
| 2643 |
2W04G |
GLASS PASSIVATED SINGLE-PHASE BRIDGE RECTIFIER |
General Semiconductor |
| 2644 |
2W04G |
SINGLE PHASE 2.0 AMP. GLASS PASSIVATED BRIDGE RECTIFIERS |
Jinan Gude Electronic Device |
| 2645 |
2W04G |
SINTERED GLASS PASSIVATED BRIDGE RECTIFIER |
Zowie Technology Corporation |
| 2646 |
2W06G |
Bridge Rectifiers (Glass Passivated) |
Fairchild Semiconductor |
| 2647 |
2W06G |
2 AMP GLASS PASSIVATED SINGLE-PHASE BRIDGE RECTIFIER |
Fuji Electric |
| 2648 |
2W06G |
GLASS PASSIVATED SINGLE-PHASE BRIDGE RECTIFIER |
General Semiconductor |
| 2649 |
2W06G |
SINGLE PHASE 2.0 AMP. GLASS PASSIVATED BRIDGE RECTIFIERS |
Jinan Gude Electronic Device |
| 2650 |
2W06G |
SINTERED GLASS PASSIVATED BRIDGE RECTIFIER |
Zowie Technology Corporation |
| 2651 |
2W08G |
Bridge Rectifiers (Glass Passivated) |
Fairchild Semiconductor |
| 2652 |
2W08G |
2 AMP GLASS PASSIVATED SINGLE-PHASE BRIDGE RECTIFIER |
Fuji Electric |
| 2653 |
2W08G |
GLASS PASSIVATED SINGLE-PHASE BRIDGE RECTIFIER |
General Semiconductor |
| 2654 |
2W08G |
SINGLE PHASE 2.0 AMP. GLASS PASSIVATED BRIDGE RECTIFIERS |
Jinan Gude Electronic Device |
| 2655 |
2W08G |
SINTERED GLASS PASSIVATED BRIDGE RECTIFIER |
Zowie Technology Corporation |
| 2656 |
2W10G |
Bridge Rectifiers (Glass Passivated) |
Fairchild Semiconductor |
| 2657 |
2W10G |
2 AMP GLASS PASSIVATED SINGLE-PHASE BRIDGE RECTIFIER |
Fuji Electric |
| 2658 |
2W10G |
GLASS PASSIVATED SINGLE-PHASE BRIDGE RECTIFIER |
General Semiconductor |
| 2659 |
2W10G |
SINGLE PHASE 2.0 AMP. GLASS PASSIVATED BRIDGE RECTIFIERS |
Jinan Gude Electronic Device |
| 2660 |
2W10G |
SINTERED GLASS PASSIVATED BRIDGE RECTIFIER |
Zowie Technology Corporation |
| 2661 |
30KW102 |
102.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications |
MDE Semiconductor |
| 2662 |
30KW102A |
102.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications |
MDE Semiconductor |
| 2663 |
30KW108 |
108.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications |
MDE Semiconductor |
| 2664 |
30KW108A |
108.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications |
MDE Semiconductor |
| 2665 |
30KW120 |
120.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications |
MDE Semiconductor |
| 2666 |
30KW120A |
120.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications |
MDE Semiconductor |
| 2667 |
30KW132 |
132.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications |
MDE Semiconductor |
| 2668 |
30KW132A |
132.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications |
MDE Semiconductor |
| 2669 |
30KW144 |
144.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications |
MDE Semiconductor |
| 2670 |
30KW144A |
144.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications |
MDE Semiconductor |
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