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Datasheets for END

Datasheets found :: 7493
Page: | 85 | 86 | 87 | 88 | 89 | 90 | 91 | 92 | 93 |
No. Part Name Description Manufacturer
2641 K4E661612C-T60 4M x 16bit CMOS Dynamic RAM with Extended Data Out Samsung Electronic
2642 K4E661612C-TC 4M x 16bit CMOS Dynamic RAM with Extended Data Out Samsung Electronic
2643 K4E661612C-TC45 4M x 16bit CMOS Dynamic RAM with Extended Data Out Samsung Electronic
2644 K4E661612C-TC50 4M x 16bit CMOS Dynamic RAM with Extended Data Out Samsung Electronic
2645 K4E661612C-TC60 4M x 16bit CMOS Dynamic RAM with Extended Data Out Samsung Electronic
2646 K4E661612C-TL45 4M x 16bit CMOS Dynamic RAM with Extended Data Out Samsung Electronic
2647 K4E661612C-TL50 4M x 16bit CMOS Dynamic RAM with Extended Data Out Samsung Electronic
2648 K4E661612C-TL60 4M x 16bit CMOS Dynamic RAM with Extended Data Out Samsung Electronic
2649 K4E661612D, K4E641612D 4M x 16bit CMOS Dynamic RAM with Extended Data Out Data Sheet Samsung Electronic
2650 K4E661612D, K4E641612D 4M x 16bit CMOS Dynamic RAM with Extended Data Out Data Sheet Samsung Electronic
2651 K4E661612E, K4E641612E 4M x 16bit CMOS Dynamic RAM with Extended Data Out Data Sheet Samsung Electronic
2652 K4E661612E, K4E641612E 4M x 16bit CMOS Dynamic RAM with Extended Data Out Data Sheet Samsung Electronic
2653 K4R271669A-N(M)CK7 256K x 16/18 bit x 2*16 Dependent Banks Direct RDRAMTM Samsung Electronic
2654 K4R271669A-N(M)CK8 256K x 16/18 bit x 2*16 Dependent Banks Direct RDRAMTM Samsung Electronic
2655 K4R271669A-NB(M)CCG6 256K x 16/18 bit x 2*16 Dependent Banks Direct RDRAMTM Samsung Electronic
2656 K4R271669AM-CG6 256K x 16 x 32s dependent banks direct RDRAM. Access time: 53.3 ns, I/O freq. 600 MHz. Samsung Electronic
2657 K4R271669AM-CK7 256K x 16 x 32s dependent banks direct RDRAM. Access time: 45 ns, I/O freq. 711 MHz. Samsung Electronic
2658 K4R271669AM-CK8 256K x 16 x 32s dependent banks direct RDRAM. Access time: 45 ns, I/O freq. 800 MHz. Samsung Electronic
2659 K4R271669AN-CG6 256K x 16 x 32s dependent banks direct RDRAM. Access time: 53.3 ns, I/O freq 600 MHz. Samsung Electronic
2660 K4R271669AN-CK7 256K x 16 x 32s dependent banks direct RDRAM. Access time: 45 ns, I/O freq. 711 MHz. Samsung Electronic
2661 K4R271669AN-CK8 256K x 16 x 32s dependent banks direct RDRAM. Access time: 45 ns, I/O freq. 800 MHz. Samsung Electronic
2662 K4R441869A-N(M)CG6 256K x 16/18 bit x 2*16 Dependent Banks Direct RDRAMTM Samsung Electronic
2663 K4R441869A-N(M)CK7 256K x 16/18 bit x 2*16 Dependent Banks Direct RDRAMTM Samsung Electronic
2664 K4R441869A-N(M)CK8 256K x 16/18 bit x 2*16 Dependent Banks Direct RDRAMTM Samsung Electronic
2665 K4R441869AM-CG6 256K x 18 x 32s dependent banks direct RDRAM. Access time: 53.3 ns, I/O freq. 600 MHz. Samsung Electronic
2666 K4R441869AM-CK7 256K x 18 x 32s dependent banks direct RDRAM. Access time: 45 ns, I/O freq. 711 MHz. Samsung Electronic
2667 K4R441869AM-CK8 256K x 18 x 32s dependent banks direct RDRAM. Access time: 45 ns, I/O freq. 800 MHz. Samsung Electronic
2668 K4R441869AN-CG6 256K x 18 x 32s dependent banks direct RDRAM. Access time: 53.3 ns, I/O freq. 600 MHz. Samsung Electronic
2669 K4R441869AN-CK7 256K x 18 x 32s dependent banks direct RDRAM. Access time: 45 ns, I/O freq. 711 MHz. Samsung Electronic
2670 K4R441869AN-CK8 256K x 18 x 32s dependent banks direct RDRAM. Access time: 45 ns, I/O freq. 800 MHz. Samsung Electronic


Datasheets found :: 7493
Page: | 85 | 86 | 87 | 88 | 89 | 90 | 91 | 92 | 93 |



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