No. |
Part Name |
Description |
Manufacturer |
2641 |
AQW414EH |
PhotoMOS relay, GU (general use)-E type 2-channel (form B) type. AC/DC type. I/O isolation voltage 5,000V. Output rating: load voltage 400 V, load current 100 mA. Through hole terminal. |
Matsushita Electric Works(Nais) |
2642 |
AQW454 |
PhotoMOS relay, HE (high-function economy) [2-channel (form B) type]. AC/DC type. Output rating: load voltage 400 V, load current 120 mA. Through hole terminal. |
Matsushita Electric Works(Nais) |
2643 |
AQW654 |
PhotoMOS relay, HE (high-function economy) [2-channel (form A form B) type]. AC/DC type. Output rating: load voltage 400 V, load current 120 mA. Through hole terminal. |
Matsushita Electric Works(Nais) |
2644 |
AR2003FV |
ACTIVE/SYNCHRONOUS RECTIFICATION CONTROLLER |
Diodes |
2645 |
AR2003FV-13 |
ACTIVE/SYNCHRONOUS RECTIFICATION CONTROLLER |
Diodes |
2646 |
AS11P2TLR |
Low voltage 1 ohm single-pole double-throw analog switch with break-before-make feature |
ST Microelectronics |
2647 |
AS11P2TLRQ |
Low voltage 1 ohm single-pole double-throw analog switch with break-before-make feature |
ST Microelectronics |
2648 |
AS21P2THB |
Low voltage high bandwidth dual single-pole double-throw analog switch |
ST Microelectronics |
2649 |
AS21P2THBQ |
Low voltage high bandwidth dual single-pole double-throw analog switch |
ST Microelectronics |
2650 |
AS21P2TLR |
Low voltage 0.5 ohm max dual single-pole double-throw analog switch with break-before-make |
ST Microelectronics |
2651 |
AS21P2TLRQ |
Low voltage 0.5 ohm max dual single-pole double-throw analog switch with break-before-make |
ST Microelectronics |
2652 |
AS4LC1M16S1 |
3.3V 2Mx8 / 1Mx16 CMOS synchronous DRAM |
Alliance Semiconductor |
2653 |
AS4LC2M8S1 |
3.3V 2Mx8 / 1Mx16 CMOS synchronous DRAM |
Alliance Semiconductor |
2654 |
AS4LC4M16S0 |
3.3V 4Mx16 and 8Mx8 CMOS synchronous DRAM |
Alliance Semiconductor |
2655 |
AS4LC4M16S0 |
3.3V 4Mx16 and 8Mx8 CMOS synchronous DRAM |
Alliance Semiconductor |
2656 |
AS4LC4M16S0-10FTC |
3.3V 4Mx16 and 8Mx8 CMOS synchronous DRAM |
Alliance Semiconductor |
2657 |
AS4LC4M16S0-10TC |
3.3V 4Mx16 and 8Mx8 CMOS synchronous DRAM |
Alliance Semiconductor |
2658 |
AS4LC4M16S0-75TC |
3.3V 4Mx16 and 8Mx8 CMOS synchronous DRAM |
Alliance Semiconductor |
2659 |
AS4LC4M16S0-8TC |
3.3V 4Mx16 and 8Mx8 CMOS synchronous DRAM |
Alliance Semiconductor |
2660 |
AS4LC8M8S0 |
3.3V 4Mx16 and 8Mx8 CMOS synchronous DRAM |
Alliance Semiconductor |
2661 |
AS4LC8M8S0 |
3.3V 4Mx16 and 8Mx8 CMOS synchronous DRAM |
Alliance Semiconductor |
2662 |
AS4LC8M8S0-10FTC |
3.3V 4Mx16 and 8Mx8 CMOS synchronous DRAM |
Alliance Semiconductor |
2663 |
AS4LC8M8S0-10TC |
3.3V 4Mx16 and 8Mx8 CMOS synchronous DRAM |
Alliance Semiconductor |
2664 |
AS4LC8M8S0-75TC |
3.3V 4Mx16 and 8Mx8 CMOS synchronous DRAM |
Alliance Semiconductor |
2665 |
AS4LC8M8S0-8TC |
3.3V 4Mx16 and 8Mx8 CMOS synchronous DRAM |
Alliance Semiconductor |
2666 |
AS5SS128K36 |
128K x 36 SSRAM SYNCHRONOUS ZBL SRAM FLOW-THRU OUTPUT |
Austin Semiconductor |
2667 |
AS5SS128K36DQ-11_IT |
128K x 36 SSRAM - synchronous ZBL SRAM flow-thru output |
Austin Semiconductor |
2668 |
AS5SS128K36DQ-11_XT |
128K x 36 SSRAM - synchronous ZBL SRAM flow-thru output |
Austin Semiconductor |
2669 |
AS5SS128K36DQ-12_IT |
128K x 36 SSRAM - synchronous ZBL SRAM flow-thru output |
Austin Semiconductor |
2670 |
AS5SS128K36DQ-12_XT |
128K x 36 SSRAM - synchronous ZBL SRAM flow-thru output |
Austin Semiconductor |
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