No. |
Part Name |
Description |
Manufacturer |
2641 |
2SC3381 |
NPN EPITAXIAL TYPE (LOW NOISE AUDIO AMPLIFIER APPLICATIONS RECOMMENDED FOR CASCODE/ CURRENT MIRROR CIRCUIT OF THE FIRST STAGE OF PRE/ MAIN AMPLIFIERS) |
TOSHIBA |
2642 |
2SC3416S |
Chroma Amplifier Transistor(300V,0.1A) |
ROHM |
2643 |
2SC3419 |
TRANSISTOR SILICON NPN EPITAXIAL TYPE (PCT PROCESS) MEDIUM POWER AMPLIFIER APPLICATIONS |
TOSHIBA |
2644 |
2SC3420 |
TRANSISTOR SILICON NPN EPITAXIAL TYPE (PCT PROCESS) STROBO FLASH APPLICATIONS MEDIUM POWER AMPLIFIER APPLICATIONS |
TOSHIBA |
2645 |
2SC3421 |
TRANSISTOR SILICON NPN EPITAXIAL TYPE (PCT PROCESS) AUDIO FREQUENCY POWER AMPLIFIER APPLICATIONS |
TOSHIBA |
2646 |
2SC3422 |
TRANSISTOR SILICON NPN EPITAXIAL TYPE (PCT PROCESS) AUDIO FREQUENCY POWER AMPLIFIER LOW SPEED SWITCHING |
TOSHIBA |
2647 |
2SC3423 |
TRANSISTOR SILICON NPN EPITAXIAL TYPE (PCT PROCESS) AUDIO FREQUENCY AMPLIFIER APPLICATIONS |
TOSHIBA |
2648 |
2SC3429 |
Transistor Silicon NPN Epitaxial Planar Type VHF~UHF Band Low Noise Amplifier Applications |
TOSHIBA |
2649 |
2SC3495 |
NPN Epitaxial Planar Silicon Transistor High hFE, Low-Frequency General-Purpose Amplifier Applications |
SANYO |
2650 |
2SC3501 |
VHF AMPLIFIER VHF TV TUNER MIXER, OSCILLATOR |
Hitachi Semiconductor |
2651 |
2SC3512 |
Transistors>Amplifiers/Bipolar |
Renesas |
2652 |
2SC3526(H) |
Small-signal device - Small-signal transistor - General-use Low-Frequency Amplifires |
Panasonic |
2653 |
2SC3526H |
Small-signal device - Small-signal transistor - General-use Low-Frequency Amplifires |
Panasonic |
2654 |
2SC3576 |
NPN Epitaxial Planar Silicon Transistor High hFE, Low-Frequency General-Purpose Amplifier Applications |
SANYO |
2655 |
2SC3582 |
MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR |
NEC |
2656 |
2SC3583 |
MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR |
NEC |
2657 |
2SC3585 |
MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISOR |
NEC |
2658 |
2SC3587 |
NPN EPITAXIAL SILICON TRANSISTOR FOR MICROWAVE LOW-NOISE AMPLIFICATION |
NEC |
2659 |
2SC3603 |
NPN EPITAXIAL SILICON TRANSISTOR FOR MICROWAVE LOW-NOISE AMPLIFICATION |
NEC |
2660 |
2SC3604 |
NPN EPITAXIAL SILICON TRANSISTOR FOR MICROWAVE LOW-NOISE AMPLIFICATION |
NEC |
2661 |
2SC3605 |
TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE VHF~UHF BAND LOW NOISE AMPLIFIER APPLICATIONS |
TOSHIBA |
2662 |
2SC3606 |
Transistor Silicon NPN Epitaxial Planar Type VHF~UHF Band Low Noise Amplifier Applications |
TOSHIBA |
2663 |
2SC3607 |
Transistor Silicon NPN Epitaxial Planar Type VHF~UHF Band Low Noise Amplifier Applications |
TOSHIBA |
2664 |
2SC3619 |
TRANSISTOR SILICON NPN TRIPLE DIFFUSED TYPE (PCT PROCESS) HIGH VOLTAGE SWITCHING AND AMPLIFIER APPLICATIONS, COLOR TV HORIZONTAL DRIVER AND COLOR TV CHROMA OUTPUT APPLICATIONS |
TOSHIBA |
2665 |
2SC3624 |
AUDIO FREQUENCY AMPLIFIER, SWITCHING NPN SILICON EPITAXIAL TRANSISTOR POWER MINI MOLD |
NEC |
2666 |
2SC3624A |
AUDIO FREQUENCY AMPLIFIER, SWITCHING NPN SILICON EPITAXIAL TRANSISTOR POWER MINI MOLD |
NEC |
2667 |
2SC3650 |
NPN Epitaxial Planar Silicon Transistor High hFE, Low-Frequency General-Purpose Amplifier Applications |
SANYO |
2668 |
2SC3651 |
High Gain, Low Frequency, General Purpose NPN Amplifier Transistor |
ON Semiconductor |
2669 |
2SC3651 |
NPN Epitaxial Planar Silicon Transistor High hFE, Low-Frequency General-Purpose Amplifier Applications |
SANYO |
2670 |
2SC3652 |
SILICON NPN EPITAXIAL HIGH FREQUENCY AMPLIFIER |
Hitachi Semiconductor |
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