| No. |
Part Name |
Description |
Manufacturer |
| 2641 |
PF0121 |
MOS FET Power Amplifier Module for GSM Mobile Phone |
Hitachi Semiconductor |
| 2642 |
PF01410 |
MOS FET Power Amplifier Module for GSM Handy Phone |
Hitachi Semiconductor |
| 2643 |
PF01410A |
MOS FET Power Amplifier Module for GSM Handy Phone |
Hitachi Semiconductor |
| 2644 |
PF01411 |
MOS FET Power Amplifier Module for E-GSM Handy Phone |
Hitachi Semiconductor |
| 2645 |
PF01411A |
MOS FET Power Amplifier Module for E-GSM Handy Phone |
Hitachi Semiconductor |
| 2646 |
PF01411B |
MOS FET Power Amplifier Module for E-GSM Handy Phone |
Hitachi Semiconductor |
| 2647 |
PF01412 |
MOS FET Power Amplifier Module for E-GSM Handy Phone |
Hitachi Semiconductor |
| 2648 |
PF01412A |
MOS FET Power Amplifier Module for E-GSM Handy Phone |
Hitachi Semiconductor |
| 2649 |
PF0210 |
MOS FET Power Amplifier Module for ADC Mobile Phone |
Hitachi Semiconductor |
| 2650 |
PF0310A |
MOS FET Power Amplifier Module for VHF Band |
Hitachi Semiconductor |
| 2651 |
PF0311 |
MOS FET Power Amplifier Module for VHF Band |
Hitachi Semiconductor |
| 2652 |
PF0313 |
MOS FET Power Amplifier Module for VHF Band |
Hitachi Semiconductor |
| 2653 |
PF0314 |
MOS FET Power Amplifier Module for VHF Band |
Hitachi Semiconductor |
| 2654 |
PF0340A |
MOS FET Power Amplifier Module |
Hitachi Semiconductor |
| 2655 |
PF0414 |
MOS FET Power Amplifier Module for DCS 1800 Handy Phone |
Hitachi Semiconductor |
| 2656 |
PF0414A |
MOS FET Power Amplifier Module for DCS 1800 Handy Phone |
Hitachi Semiconductor |
| 2657 |
PF0414B |
MOS FET Power Amplifier Module for DCS 1800 Handy Phone |
Hitachi Semiconductor |
| 2658 |
PF0415 |
MOS FET Power Amplifier Module for PCS 1900 Handy Phone |
Hitachi Semiconductor |
| 2659 |
PF0415A |
MOS FET Power Amplifier Module for PCS 1900 Handy Phone |
Hitachi Semiconductor |
| 2660 |
PF08103A |
MOS FET Power Amplifier Module for E-GSM900 and DCS1800 Dual Band Handy Phone |
Hitachi Semiconductor |
| 2661 |
PF08103B |
MOS FET Power Amplifier Module for E-GSM900 and DCS1800 Dual Band Handy Phone |
Hitachi Semiconductor |
| 2662 |
PF08109B |
MOS FET Power Amplifier Module for E-GSM and DCS1800 Dual Band Handy Phone |
Renesas |
| 2663 |
PF1010A |
MOS FET Power Amplifier Module for P/C LAN |
Hitachi Semiconductor |
| 2664 |
PM1210B |
Silicon N-Channel MOS FET Module |
Hitachi Semiconductor |
| 2665 |
PM1220B |
Silicon N-Channel MOS FET Module |
Hitachi Semiconductor |
| 2666 |
PM45502C |
V(dss): 450V; 300W; silicon N-channel power MOS FET module. For high speed power switching |
Hitachi Semiconductor |
| 2667 |
PM4550C |
Silicon N-Channel MOS FET Module |
Hitachi Semiconductor |
| 2668 |
PMV31XN |
N-channel TrenchMOS FET |
Nexperia |
| 2669 |
PMV31XN |
N-channel TrenchMOS FET |
NXP Semiconductors |
| 2670 |
PS710A-1A |
6-PIN DIP, 0.1 ohm LOW ON-STATE RESISTANCE 1.8 A CONTINUOUS LOAD CURRENT 1-ch Optical Coupled MOS FET |
NEC |
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