| No. |
Part Name |
Description |
Manufacturer |
| 2641 |
HER1601C |
High efficiency rectifier. Positive CT. Maximum recurrent peak reverse voltage 50 V. Maximum average forward rectified current 16.0 A. |
Bytes |
| 2642 |
HER1602A |
High efficiency rectifier. Negative CT. Maximum recurrent peak reverse voltage 100 V. Maximum average forward rectified current 16.0 A. |
Bytes |
| 2643 |
HER1602C |
High efficiency rectifier. Positive CT. Maximum recurrent peak reverse voltage 100 V. Maximum average forward rectified current 16.0 A. |
Bytes |
| 2644 |
HER1603A |
High efficiency rectifier. Negative CT. Maximum recurrent peak reverse voltage 200 V. Maximum average forward rectified current 16.0 A. |
Bytes |
| 2645 |
HER1603C |
High efficiency rectifier. Positive CT. Maximum recurrent peak reverse voltage 200 V. Maximum average forward rectified current 16.0 A. |
Bytes |
| 2646 |
HER1604A |
High efficiency rectifier. Negative CT. Maximum recurrent peak reverse voltage 300 V. Maximum average forward rectified current 16.0 A. |
Bytes |
| 2647 |
HER1604C |
High efficiency rectifier. Positive CT. Maximum recurrent peak reverse voltage 300 V. Maximum average forward rectified current 16.0 A. |
Bytes |
| 2648 |
HER1605A |
High efficiency rectifier. Negative CT. Maximum recurrent peak reverse voltage 400 V. Maximum average forward rectified current 16.0 A. |
Bytes |
| 2649 |
HER1605C |
High efficiency rectifier. Positive CT. Maximum recurrent peak reverse voltage 400 V. Maximum average forward rectified current 16.0 A. |
Bytes |
| 2650 |
HER1606A |
High efficiency rectifier. Negative CT. Maximum recurrent peak reverse voltage 600 V. Maximum average forward rectified current 16.0 A. |
Bytes |
| 2651 |
HER1606C |
High efficiency rectifier. Positive CT. Maximum recurrent peak reverse voltage 600 V. Maximum average forward rectified current 16.0 A. |
Bytes |
| 2652 |
HER305P |
High efficiency rectifier. Max recurrent peak reverse voltage 400V, max RMS voltage 280V, max DC blocking voltage 400V. Max average forward recttified current 3.0A at 50degreC. |
Rectron Semiconductor |
| 2653 |
HER801R |
High efficiency rectifier. Case negative. Maximum recurrent peak reverse voltage 50 V. Maximum average forward rectified current 8.0 A. |
Bytes |
| 2654 |
HER802R |
High efficiency rectifier. Case negative. Maximum recurrent peak reverse voltage 100 V. Maximum average forward rectified current 8.0 A. |
Bytes |
| 2655 |
HER803R |
High efficiency rectifier. Case negative. Maximum recurrent peak reverse voltage 200 V. Maximum average forward rectified current 8.0 A. |
Bytes |
| 2656 |
HER804R |
High efficiency rectifier. Case negative. Maximum recurrent peak reverse voltage 300 V. Maximum average forward rectified current 8.0 A. |
Bytes |
| 2657 |
HER805R |
High efficiency rectifier. Case negative. Maximum recurrent peak reverse voltage 400 V. Maximum average forward rectified current 8.0 A. |
Bytes |
| 2658 |
HER806R |
High efficiency rectifier. Case negative. Maximum recurrent peak reverse voltage 600 V. Maximum average forward rectified current 8.0 A. |
Bytes |
| 2659 |
HN462532 |
4096-word x 8-bit U.V. Erasable and Programmable Read Only Memory |
Hitachi Semiconductor |
| 2660 |
HN462532G |
4096-word x 8-bit U.V. Erasable and Programmable Read Only Memory |
Hitachi Semiconductor |
| 2661 |
HN462532G-2 |
4096-word x 8-bit U.V. Erasable and Programmable Read Only Memory |
Hitachi Semiconductor |
| 2662 |
HN462532GL |
4096-word x 8-bit U.V. Erasable and Programmable Read Only Memory |
Hitachi Semiconductor |
| 2663 |
HN462716G-1 |
2048-word x 8-bit U.V. Erasable and Electrically Programmable Read Only Memory |
Hitachi Semiconductor |
| 2664 |
HN462716G-2 |
2048-word x 8-bit U.V. Erasable and Electrically Programmable Read Only Memory |
Hitachi Semiconductor |
| 2665 |
HN462732 |
4096-word x 8-bit U.V. Erasable and Programmable Read Only Memory |
Hitachi Semiconductor |
| 2666 |
HN462732G |
4096-word x 8-bit U.V. Erasable and Programmable Read Only Memory |
Hitachi Semiconductor |
| 2667 |
HN462732G-2 |
4096-word x 8-bit U.V. Erasable and Programmable Read Only Memory |
Hitachi Semiconductor |
| 2668 |
HN482732AG-20 |
4096-word x 8-bit U.V. Erasable and Programmable Read Only Memory |
Hitachi Semiconductor |
| 2669 |
HN482732AG-25 |
4096-word x 8-bit U.V. Erasable and Programmable Read Only Memory |
Hitachi Semiconductor |
| 2670 |
HN482732AG-30 |
4096-word x 8-bit U.V. Erasable and Programmable Read Only Memory |
Hitachi Semiconductor |
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