| No. |
Part Name |
Description |
Manufacturer |
| 2671 |
1PMT5920B |
3.2 Watt Plastic Surface Mount POWERMITE© Package |
ON Semiconductor |
| 2672 |
1PMT5920BT1 |
3.2 Watt Plastic Surface Mount POWERMITE Package |
ON Semiconductor |
| 2673 |
1PMT5920BT3-D |
3.2 Watt Plastic Surface Mount POWERMITE Package |
ON Semiconductor |
| 2674 |
1PMT7.0A |
Zener Transient Voltage Suppressor POWERMITE® Package |
ON Semiconductor |
| 2675 |
1PMT7.0AT1 |
Zener Transient Voltage Suppressor POWERMITE® Package |
ON Semiconductor |
| 2676 |
1PMT7.0AT3 |
Zener Transient Voltage Suppressor POWERMITE® Package |
ON Semiconductor |
| 2677 |
1R5DL41A |
High Efficiency Rectifier (HED) Switching Mode Power Supply Applications |
TOSHIBA |
| 2678 |
1R5DU41 |
SUPER FAST RECOVERY RECTIFIER (SWITCHING TYPE POWER SUPPLY APPLICATIONS) |
TOSHIBA |
| 2679 |
1R5GH45 |
FAST RECOVERY RECTIFIER SWITCHING MODE POWER SUPPLY APPLICATIONS |
TOSHIBA |
| 2680 |
1R5GU41 |
DUPER FAST RECOVERY RECTIFIER SWITCHING MODE POWER SUPPLY APPLICATIONS |
TOSHIBA |
| 2681 |
1R5JH45 |
FAST RECOVERY RECTIFIER SWITCHING MODE POWER SUPPLY APPLICATIONS |
TOSHIBA |
| 2682 |
1R5NH41 |
FAST RECOVERY RECTIFIER SWITCHING MODE POWER SUPPLY APPLICATIONS |
TOSHIBA |
| 2683 |
1R5NH45 |
FAST RECOVERY RECTIFIER SWITCHING MODE POWER SUPPLY APPLICATIONS |
TOSHIBA |
| 2684 |
1R5NU41 |
SUPER FAST RECOVERY RECTIFIER SWITCHING MODE POWER SUPPLY APPLICATIONS |
TOSHIBA |
| 2685 |
1S1472 |
Radio & TV power supply silicon rectifier |
TOSHIBA |
| 2686 |
1S310 |
Silicon Diffused Junction Diode, VR(peak)=-50V, intended for use as a Rectifier for Power Source |
Hitachi Semiconductor |
| 2687 |
1S310H |
Silicon Diffused Junction Diode, VR(peak)=-50V, intended for use as a Rectifier for Power Source |
Hitachi Semiconductor |
| 2688 |
1S311 |
Silicon Diffused Junction Diode, VR(peak)=-100V, intended for use as a Rectifier for Power Source |
Hitachi Semiconductor |
| 2689 |
1S311H |
Silicon Diffused Junction Diode, VR(peak)=-100V, intended for use as a Rectifier for Power Source |
Hitachi Semiconductor |
| 2690 |
1S312 |
Silicon Diffused Junction Diode, VR(peak)=-200V, intended for use as a Rectifier for Power Source |
Hitachi Semiconductor |
| 2691 |
1S312H |
Silicon Diffused Junction Diode, VR(peak)=-200V, intended for use as a Rectifier for Power Source |
Hitachi Semiconductor |
| 2692 |
1S313 |
Silicon Diffused Junction Diode, VR(peak)=-300V, intended for use as a Rectifier for Power Source |
Hitachi Semiconductor |
| 2693 |
1S313H |
Silicon Diffused Junction Diode, VR(peak)=-300V, intended for use as a Rectifier for Power Source |
Hitachi Semiconductor |
| 2694 |
1S314 |
Silicon Diffused Junction Diode, VR(peak)=-400V, intended for use as a Rectifier for Power Source |
Hitachi Semiconductor |
| 2695 |
1S314H |
Silicon Diffused Junction Diode, VR(peak)=-400V, intended for use as a Rectifier for Power Source |
Hitachi Semiconductor |
| 2696 |
1S315 |
Silicon Diffused Junction Diode, VR(peak)=-500V, intended for use as a Rectifier for Power Source |
Hitachi Semiconductor |
| 2697 |
1S315H |
Silicon Diffused Junction Diode, VR(peak)=-500V, intended for use as a Rectifier for Power Source |
Hitachi Semiconductor |
| 2698 |
1S5015 |
Silicon power zener diode 10W 15V |
Texas Instruments |
| 2699 |
1S5015A |
Silicon power zener diode 10W 15V, ±5% tolerance |
Texas Instruments |
| 2700 |
1S5015C |
Silicon power zener diode 10W 15V, double anode |
Texas Instruments |
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