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Datasheets for ANNEL ENHANCEME

Datasheets found :: 5405
Page: | 86 | 87 | 88 | 89 | 90 | 91 | 92 | 93 | 94 |
No. Part Name Description Manufacturer
2671 IRF640 MOSPOWER N-Channel Enhancement Mode Transistor 200V 18A Siliconix
2672 IRF640-D Power Field Effect Transistor N-Channel Enhancement-Mode Silicon Gate ON Semiconductor
2673 IRF641 N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 150V. Continuous drain current(at Tc 25deg) 18A. General Electric Solid State
2674 IRF641 MOSPOWER N-Channel Enhancement Mode Transistor 150V 18A Siliconix
2675 IRF642 N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 150V. Continuous drain current(at Tc 25deg) 16A. General Electric Solid State
2676 IRF642 MOSPOWER N-Channel Enhancement Mode Transistor 200V 16A Siliconix
2677 IRF643 MOSPOWER N-Channel Enhancement Mode Transistor 150V 16A Siliconix
2678 IRF710 MOSPOWER N-Channel Enhancement Mode Transistor 400V 1.5A Siliconix
2679 IRF711 MOSPOWER N-Channel Enhancement Mode Transistor 350V 1.5A Siliconix
2680 IRF712 MOSPOWER N-Channel Enhancement Mode Transistor 400V 1.5A Siliconix
2681 IRF713 MOSPOWER N-Channel Enhancement Mode Transistor 350V 1.5A Siliconix
2682 IRF720 N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 400V. Continuous drain current(at Tc 25deg) 3.0A. General Electric Solid State
2683 IRF720 MOSPOWER N-Channel Enhancement Mode Transistor 400V 3A Siliconix
2684 IRF721 N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 350V. Continuous drain current(at Tc 25deg) 3.0A. General Electric Solid State
2685 IRF721 MOSPOWER N-Channel Enhancement Mode Transistor 350V 3A Siliconix
2686 IRF722 N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 400V. Continuous drain current(at Tc 25deg) 2.5A. General Electric Solid State
2687 IRF722 MOSPOWER N-Channel Enhancement Mode Transistor 400V 2.5A Siliconix
2688 IRF723 N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 350V. Continuous drain current(at Tc 25deg) 2.5A. General Electric Solid State
2689 IRF723 MOSPOWER N-Channel Enhancement Mode Transistor 350V 2.5A Siliconix
2690 IRF730 N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 400V. Continuous drain current(at Tc 25deg) 5.5A. General Electric Solid State
2691 IRF730 MOSPOWER N-Channel Enhancement Mode Transistor 400V 5.5A Siliconix
2692 IRF731 N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 350V. Continuous drain current(at Tc 25deg) 5.5A. General Electric Solid State
2693 IRF731 MOSPOWER N-Channel Enhancement Mode Transistor 350V 5.5A Siliconix
2694 IRF732 N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 400V. Continuous drain current(at Tc 25deg) 4.5A. General Electric Solid State
2695 IRF732 MOSPOWER N-Channel Enhancement Mode Transistor 400V 4.5A Siliconix
2696 IRF733 N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 350V. Continuous drain current(at Tc 25deg) 4.5A. General Electric Solid State
2697 IRF733 MOSPOWER N-Channel Enhancement Mode Transistor 350V 4.5A Siliconix
2698 IRF740 MOSPOWER N-Channel Enhancement Mode Transistor 400V 10A Siliconix
2699 IRF741 MOSPOWER N-Channel Enhancement Mode Transistor 350V 10A Siliconix
2700 IRF742 MOSPOWER N-Channel Enhancement Mode Transistor 400V 8.0A Siliconix


Datasheets found :: 5405
Page: | 86 | 87 | 88 | 89 | 90 | 91 | 92 | 93 | 94 |



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