| No. |
Part Name |
Description |
Manufacturer |
| 2671 |
NJM2160AV |
DUAL BOOST AMPLIFIER for CAR AUDIO |
New Japan Radio |
| 2672 |
NTE388 |
Silicon Complementary Transistors General Purpose High Power Audio, Disk Head Positioner for Linear Applications |
NTE Electronics |
| 2673 |
NTE395 |
Silicon PNP Transistor Wide Band Linear Amplifier |
NTE Electronics |
| 2674 |
NTE60 |
Silicon Complementary Transistors High Power Audio, Disk Head Positioner for Linear Applications |
NTE Electronics |
| 2675 |
NTE87 |
Silicon Complementary Transistors High Power Audio, Disk Head Positioner for Linear Applications |
NTE Electronics |
| 2676 |
OPA625 |
High Bandwidth, High Precision, Low Noise & Distortion Amplifier SAR ADC Driver with Power Scaling 6-SOT-23 -40 to 125 |
Texas Instruments |
| 2677 |
OPA625IDBVR |
High Bandwidth, High Precision, Low Noise & Distortion Amplifier SAR ADC Driver with Power Scaling 6-SOT-23 -40 to 125 |
Texas Instruments |
| 2678 |
OPA625IDBVT |
High Bandwidth, High Precision, Low Noise & Distortion Amplifier SAR ADC Driver with Power Scaling 6-SOT-23 -40 to 125 |
Texas Instruments |
| 2679 |
P4KE100 |
81.00V; 1mA ;400W peak pulse power; glass passivated junction transient voltage suppressor (TVS) diode. For bipolar applications |
MDE Semiconductor |
| 2680 |
P4KE100A |
85.50V; 1mA ;400W peak pulse power; glass passivated junction transient voltage suppressor (TVS) diode. For bipolar applications |
MDE Semiconductor |
| 2681 |
P4KE110 |
89.20V; 1mA ;400W peak pulse power; glass passivated junction transient voltage suppressor (TVS) diode. For bipolar applications |
MDE Semiconductor |
| 2682 |
P4KE110A |
94.00V; 1mA ;400W peak pulse power; glass passivated junction transient voltage suppressor (TVS) diode. For bipolar applications |
MDE Semiconductor |
| 2683 |
P4KE120 |
97.20V; 1mA ;400W peak pulse power; glass passivated junction transient voltage suppressor (TVS) diode. For bipolar applications |
MDE Semiconductor |
| 2684 |
P4KE120A |
102.00V; 1mA ;400W peak pulse power; glass passivated junction transient voltage suppressor (TVS) diode. For bipolar applications |
MDE Semiconductor |
| 2685 |
P4KE130 |
105.00V; 1mA ;400W peak pulse power; glass passivated junction transient voltage suppressor (TVS) diode. For bipolar applications |
MDE Semiconductor |
| 2686 |
P4KE130A |
111.00V; 1mA ;400W peak pulse power; glass passivated junction transient voltage suppressor (TVS) diode. For bipolar applications |
MDE Semiconductor |
| 2687 |
P4KE150 |
121.00V; 1mA ;400W peak pulse power; glass passivated junction transient voltage suppressor (TVS) diode. For bipolar applications |
MDE Semiconductor |
| 2688 |
P4KE150A |
128.00V; 1mA ;400W peak pulse power; glass passivated junction transient voltage suppressor (TVS) diode. For bipolar applications |
MDE Semiconductor |
| 2689 |
P4KE160 |
130.00V; 1mA ;400W peak pulse power; glass passivated junction transient voltage suppressor (TVS) diode. For bipolar applications |
MDE Semiconductor |
| 2690 |
P4KE160A |
136.00V; 1mA ;400W peak pulse power; glass passivated junction transient voltage suppressor (TVS) diode. For bipolar applications |
MDE Semiconductor |
| 2691 |
P4KE170 |
138.00V; 1mA ;400W peak pulse power; glass passivated junction transient voltage suppressor (TVS) diode. For bipolar applications |
MDE Semiconductor |
| 2692 |
P4KE170A |
145.00V; 1mA ;400W peak pulse power; glass passivated junction transient voltage suppressor (TVS) diode. For bipolar applications |
MDE Semiconductor |
| 2693 |
P4KE180 |
146.00V; 1mA ;400W peak pulse power; glass passivated junction transient voltage suppressor (TVS) diode. For bipolar applications |
MDE Semiconductor |
| 2694 |
P4KE180A |
154.00V; 1mA ;400W peak pulse power; glass passivated junction transient voltage suppressor (TVS) diode. For bipolar applications |
MDE Semiconductor |
| 2695 |
P4KE200 |
162.00V; 1mA ;400W peak pulse power; glass passivated junction transient voltage suppressor (TVS) diode. For bipolar applications |
MDE Semiconductor |
| 2696 |
P4KE200A |
171.00V; 1mA ;400W peak pulse power; glass passivated junction transient voltage suppressor (TVS) diode. For bipolar applications |
MDE Semiconductor |
| 2697 |
P4KE220 |
175.00V; 1mA ;400W peak pulse power; glass passivated junction transient voltage suppressor (TVS) diode. For bipolar applications |
MDE Semiconductor |
| 2698 |
P4KE220A |
185.00V; 1mA ;400W peak pulse power; glass passivated junction transient voltage suppressor (TVS) diode. For bipolar applications |
MDE Semiconductor |
| 2699 |
P4KE250 |
202.00V; 1mA ;400W peak pulse power; glass passivated junction transient voltage suppressor (TVS) diode. For bipolar applications |
MDE Semiconductor |
| 2700 |
P4KE250A |
214.00V; 1mA ;400W peak pulse power; glass passivated junction transient voltage suppressor (TVS) diode. For bipolar applications |
MDE Semiconductor |
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