| No. |
Part Name |
Description |
Manufacturer |
| 2671 |
2SC3374 |
VHF AMPLIFIER VHF TV TUNER RF AMPLIFIER |
Hitachi Semiconductor |
| 2672 |
2SC3380 |
Transistors>Amplifiers/Bipolar |
Renesas |
| 2673 |
2SC3381 |
NPN EPITAXIAL TYPE (LOW NOISE AUDIO AMPLIFIER APPLICATIONS RECOMMENDED FOR CASCODE/ CURRENT MIRROR CIRCUIT OF THE FIRST STAGE OF PRE/ MAIN AMPLIFIERS) |
TOSHIBA |
| 2674 |
2SC3381 |
NPN EPITAXIAL TYPE (LOW NOISE AUDIO AMPLIFIER APPLICATIONS RECOMMENDED FOR CASCODE/ CURRENT MIRROR CIRCUIT OF THE FIRST STAGE OF PRE/ MAIN AMPLIFIERS) |
TOSHIBA |
| 2675 |
2SC3416S |
Chroma Amplifier Transistor(300V,0.1A) |
ROHM |
| 2676 |
2SC3419 |
TRANSISTOR SILICON NPN EPITAXIAL TYPE (PCT PROCESS) MEDIUM POWER AMPLIFIER APPLICATIONS |
TOSHIBA |
| 2677 |
2SC3420 |
TRANSISTOR SILICON NPN EPITAXIAL TYPE (PCT PROCESS) STROBO FLASH APPLICATIONS MEDIUM POWER AMPLIFIER APPLICATIONS |
TOSHIBA |
| 2678 |
2SC3421 |
TRANSISTOR SILICON NPN EPITAXIAL TYPE (PCT PROCESS) AUDIO FREQUENCY POWER AMPLIFIER APPLICATIONS |
TOSHIBA |
| 2679 |
2SC3422 |
TRANSISTOR SILICON NPN EPITAXIAL TYPE (PCT PROCESS) AUDIO FREQUENCY POWER AMPLIFIER LOW SPEED SWITCHING |
TOSHIBA |
| 2680 |
2SC3423 |
TRANSISTOR SILICON NPN EPITAXIAL TYPE (PCT PROCESS) AUDIO FREQUENCY AMPLIFIER APPLICATIONS |
TOSHIBA |
| 2681 |
2SC3429 |
Transistor Silicon NPN Epitaxial Planar Type VHF~UHF Band Low Noise Amplifier Applications |
TOSHIBA |
| 2682 |
2SC3495 |
NPN Epitaxial Planar Silicon Transistor High hFE, Low-Frequency General-Purpose Amplifier Applications |
SANYO |
| 2683 |
2SC3501 |
VHF AMPLIFIER VHF TV TUNER MIXER, OSCILLATOR |
Hitachi Semiconductor |
| 2684 |
2SC3512 |
Transistors>Amplifiers/Bipolar |
Renesas |
| 2685 |
2SC3526(H) |
Small-signal device - Small-signal transistor - General-use Low-Frequency Amplifires |
Panasonic |
| 2686 |
2SC3526H |
Small-signal device - Small-signal transistor - General-use Low-Frequency Amplifires |
Panasonic |
| 2687 |
2SC3576 |
NPN Epitaxial Planar Silicon Transistor High hFE, Low-Frequency General-Purpose Amplifier Applications |
SANYO |
| 2688 |
2SC3582 |
MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR |
NEC |
| 2689 |
2SC3582-T |
For amplify microwave and low noise. |
NEC |
| 2690 |
2SC3583 |
MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR |
NEC |
| 2691 |
2SC3583-L |
For amplify microwave and low noise. |
NEC |
| 2692 |
2SC3583-T1B |
For amplify microwave and low noise. |
NEC |
| 2693 |
2SC3583-T2B |
For amplify microwave and low noise. |
NEC |
| 2694 |
2SC3585 |
MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISOR |
NEC |
| 2695 |
2SC3585-L |
For amplify microwave and low noise. |
NEC |
| 2696 |
2SC3585-T1B |
For amplify microwave and low noise. |
NEC |
| 2697 |
2SC3585-T2B |
For amplify microwave and low noise. |
NEC |
| 2698 |
2SC3587 |
NPN EPITAXIAL SILICON TRANSISTOR FOR MICROWAVE LOW-NOISE AMPLIFICATION |
NEC |
| 2699 |
2SC3603 |
NPN EPITAXIAL SILICON TRANSISTOR FOR MICROWAVE LOW-NOISE AMPLIFICATION |
NEC |
| 2700 |
2SC3604 |
NPN EPITAXIAL SILICON TRANSISTOR FOR MICROWAVE LOW-NOISE AMPLIFICATION |
NEC |
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