No. |
Part Name |
Description |
Manufacturer |
2671 |
MFE3001 |
Silicon N-channel insulated-gate field-effect transistor designed for low-power applications in the audio frequency range |
Motorola |
2672 |
MG300Q1US11 |
INSULATED GATE BIPOLAR TRANSISTOR |
TOSHIBA |
2673 |
MGP11N60E |
Insulated Gate Bipolar Transistor |
Motorola |
2674 |
MGP11N60E-D |
Insulated Gate Bipolar Transistor N-Channel Enhancement-Mode Silicon Gate |
ON Semiconductor |
2675 |
MGP11N60ED-D |
Insulated Gate Bipolar Transistor with Anti-Parallel Diode N-Channel Enhancement-Mode Silicon Gate |
ON Semiconductor |
2676 |
MGP14N60E |
Insulated Gate Bipolar Transistor |
Motorola |
2677 |
MGP14N60E-D |
Insulated Gate Bipolar Transistor N-Channel Enhancement-Mode Silicon Gate |
ON Semiconductor |
2678 |
MGP15N60U |
Insulated Gate Bipolar Transistor |
Motorola |
2679 |
MGP15N60U-D |
Insulated Gate Bipolar Transistor N-Channel Enhancement-Mode Silicon Gate |
ON Semiconductor |
2680 |
MGP20N60U |
Insulated Gate Bipolar Transistor |
Motorola |
2681 |
MGP20N60U-D |
Insulated Gate Bipolar Transistor N-Channel Enhancement-Mode Silicon Gate |
ON Semiconductor |
2682 |
MGP21N60E |
Insulated Gate Bipolar Transistor |
Motorola |
2683 |
MGP21N60E-D |
Insulated Gate Bipolar Transistor N-Channel Enhancement-Mode Silicon Gate |
ON Semiconductor |
2684 |
MGP4N60E |
Insulated Gate Bipolar Transistor |
Motorola |
2685 |
MGP4N60E-D |
Insulated Gate Bipolar Transistor N-Channel Enhancement-Mode Silicon Gate |
ON Semiconductor |
2686 |
MGP4N60ED |
Insulated Gate Bipolar Transistor with Anti-Parallel Diode |
ON Semiconductor |
2687 |
MGP4N60ED-D |
Insulated Gate Bipolar Transistor with Anti-Parallel Diode N-Channel Enhancement-Mode Silicon Gate |
ON Semiconductor |
2688 |
MGP7N60E |
Insulated Gate Bipolar Transistor |
Motorola |
2689 |
MGP7N60E-D |
Insulated Gate Bipolar Transistor N-Channel Enhancement-Mode Silicon Gate |
ON Semiconductor |
2690 |
MGP7N60ED |
Insulated Gate Bipolar Transistor withr Anti-Parallel Diode |
ON Semiconductor |
2691 |
MGP7N60ED-D |
Insulated Gate Bipolar Transistor with Anti-Parallel Diode N-Channel Enhancement-Mode Silicon Gate |
ON Semiconductor |
2692 |
MGS05N60D |
Insulated Gate Bipolar Transistor |
Motorola |
2693 |
MGS05N60D-D |
Insulated Gate Bipolar Transistor N-Channel Enhancement-Mode Silicon Gate |
ON Semiconductor |
2694 |
MGS13002D |
Insulated Gate Bipolar Transistor |
Motorola |
2695 |
MGS13002D |
Insulated Gate Bipolar Transistor N-Channel |
ON Semiconductor |
2696 |
MGS13002D-D |
Insulated Gate Bipolar Transistor N-Channel Enhancement-Mode Silicon Gate |
ON Semiconductor |
2697 |
MGV12N120D |
Insulated Gate Bipolar Transistor with Anti-Parallel Diode |
Motorola |
2698 |
MGW12N120 |
Insulated Gate Bipolar Transistor |
Motorola |
2699 |
MGW12N120 |
Insulated Gate Bipolar Transistor N-Channel |
ON Semiconductor |
2700 |
MGW12N120-D |
Insulated Gate Bipolar Transistor N-Channel Enhancement-Mode Silicon Gate |
ON Semiconductor |
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