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Datasheets for WORK

Datasheets found :: 10844
Page: | 86 | 87 | 88 | 89 | 90 | 91 | 92 | 93 | 94 |
No. Part Name Description Manufacturer
2671 BA6567K Speech Network ROHM
2672 BA6569AFP Speech network for telephones ROHM
2673 BA6569AS Speech network for telephones ROHM
2674 BA6569AS/AFP Communications LSIs > ICs for telephone > Speech network ROHM
2675 BA6569FP Speech Network for Telephone Set ROHM
2676 BA6569S Speech Network for Telephone Set ROHM
2677 BA8215 Speech Network for Telephone Set ROHM
2678 BA8215L Speech Network for Telephone Set ROHM
2679 BA8216 Speech Network for Telephone Set ROHM
2680 BB1110B DDR SDRAM TERMINATOR NETWORKS. BI Technologies
2681 BB1110TB DDR SDRAM TERMINATOR NETWORKS. BI Technologies
2682 BB2110DI DDR SDRAM TERMINATOR NETWORKS. BI Technologies
2683 BCM4780 NASoC Network-Attached Storage Processor Broadcom
2684 BCM4780P NETWORK ATTACHED STORAGE PROCESSOR Broadcom
2685 BF1005 RF-MOSFET - integrated full biasing network, VDS=5V, gfs=24mS, Gp=19dB, F=1.4dB Infineon
2686 BF1005 Silicon N-Channel MOSFET Tetrode (For low noise, high gain controlled input stages up to 1GHz Operating voltage 5V Integrated stabilized bias network) Siemens
2687 BF1005R RF-MOSFET - integrated full biasing network, VDS=5V, gfs=24mS, Gps=19dB, F=1.4dB Infineon
2688 BF1005S RF-MOSFET - integrated full biasing network, VDS=5V, gfs=30mS, Gp=20dB, F=1.4dB Infineon
2689 BF1005S Silicon N-Channel MOSFET Tetrode (For low noise, high gain controlled input stages up to 1GHz Operating voltage 5V Integrated stabilized bias network) Siemens
2690 BF1005SR RF-MOSFET - integrated full biasing network, VDS=5V, gfs=24mS, Gp=19dB, F=1.4dB Infineon
2691 BF1009 Silicon N-Channel MOSFET Tetrode (For low noise, high gain controlled input stages up to 1GHz Operating voltage 9 V Integrated stabilized bias network Siemens
2692 BF1009S RF-MOSFET - integrated full biasing network, VDS=9V, gfs=30mS, Gps=22dB, F=1.4dB; Datasheet on demand Infineon
2693 BF1009S Silicon N-Channel MOSFET Tetrode (For low noise, high gain controlled input stages up to 1GHz Operating voltage 9V Integrated bias network) Siemens
2694 BF1009SR RF-MOSFET - integrated full biasing network, VDS=9V, gfs=30mS, Gps=22dB, F=1.4dB; Datasheet on demand Infineon
2695 BF1012 Silicon N-Channel MOSFET Tetrode (For low noise, high gain controlled input stages up to 1GHz Operating voltage 12V Integrated stabilized bias network Siemens
2696 BF1012S Silicon N-Channel MOSFET Tetrode (For low noise, high gain controlled input stages up to 1GHz Operating voltage 5V Integrated stabilized bias network) Siemens
2697 BF2030 RF-MOSFET - integrated semi biasing network, VDS=5V, gfs=31mS, Gp=23dB, F=1.5dB Infineon
2698 BF2030R RF-MOSFET - integrated semi biasing network, VDS=5V, gfs=31mS, Gp=23dB, F=1.5dB Infineon
2699 BF2030W RF-MOSFET - integrated semi biasing network, VDS=5V, gfs=31mS, Gp=23dB, F=1.5dB Infineon
2700 BF2040 RF-MOSFET - integrated semi biasing network, VDS=5V, gfs=41mS, Gp=23dB, F=1.5dB Infineon


Datasheets found :: 10844
Page: | 86 | 87 | 88 | 89 | 90 | 91 | 92 | 93 | 94 |



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