No. |
Part Name |
Description |
Manufacturer |
2671 |
BA6567K |
Speech Network |
ROHM |
2672 |
BA6569AFP |
Speech network for telephones |
ROHM |
2673 |
BA6569AS |
Speech network for telephones |
ROHM |
2674 |
BA6569AS/AFP |
Communications LSIs > ICs for telephone > Speech network |
ROHM |
2675 |
BA6569FP |
Speech Network for Telephone Set |
ROHM |
2676 |
BA6569S |
Speech Network for Telephone Set |
ROHM |
2677 |
BA8215 |
Speech Network for Telephone Set |
ROHM |
2678 |
BA8215L |
Speech Network for Telephone Set |
ROHM |
2679 |
BA8216 |
Speech Network for Telephone Set |
ROHM |
2680 |
BB1110B |
DDR SDRAM TERMINATOR NETWORKS. |
BI Technologies |
2681 |
BB1110TB |
DDR SDRAM TERMINATOR NETWORKS. |
BI Technologies |
2682 |
BB2110DI |
DDR SDRAM TERMINATOR NETWORKS. |
BI Technologies |
2683 |
BCM4780 |
NASoC Network-Attached Storage Processor |
Broadcom |
2684 |
BCM4780P |
NETWORK ATTACHED STORAGE PROCESSOR |
Broadcom |
2685 |
BF1005 |
RF-MOSFET - integrated full biasing network, VDS=5V, gfs=24mS, Gp=19dB, F=1.4dB |
Infineon |
2686 |
BF1005 |
Silicon N-Channel MOSFET Tetrode (For low noise, high gain controlled input stages up to 1GHz Operating voltage 5V Integrated stabilized bias network) |
Siemens |
2687 |
BF1005R |
RF-MOSFET - integrated full biasing network, VDS=5V, gfs=24mS, Gps=19dB, F=1.4dB |
Infineon |
2688 |
BF1005S |
RF-MOSFET - integrated full biasing network, VDS=5V, gfs=30mS, Gp=20dB, F=1.4dB |
Infineon |
2689 |
BF1005S |
Silicon N-Channel MOSFET Tetrode (For low noise, high gain controlled input stages up to 1GHz Operating voltage 5V Integrated stabilized bias network) |
Siemens |
2690 |
BF1005SR |
RF-MOSFET - integrated full biasing network, VDS=5V, gfs=24mS, Gp=19dB, F=1.4dB |
Infineon |
2691 |
BF1009 |
Silicon N-Channel MOSFET Tetrode (For low noise, high gain controlled input stages up to 1GHz Operating voltage 9 V Integrated stabilized bias network |
Siemens |
2692 |
BF1009S |
RF-MOSFET - integrated full biasing network, VDS=9V, gfs=30mS, Gps=22dB, F=1.4dB; Datasheet on demand |
Infineon |
2693 |
BF1009S |
Silicon N-Channel MOSFET Tetrode (For low noise, high gain controlled input stages up to 1GHz Operating voltage 9V Integrated bias network) |
Siemens |
2694 |
BF1009SR |
RF-MOSFET - integrated full biasing network, VDS=9V, gfs=30mS, Gps=22dB, F=1.4dB; Datasheet on demand |
Infineon |
2695 |
BF1012 |
Silicon N-Channel MOSFET Tetrode (For low noise, high gain controlled input stages up to 1GHz Operating voltage 12V Integrated stabilized bias network |
Siemens |
2696 |
BF1012S |
Silicon N-Channel MOSFET Tetrode (For low noise, high gain controlled input stages up to 1GHz Operating voltage 5V Integrated stabilized bias network) |
Siemens |
2697 |
BF2030 |
RF-MOSFET - integrated semi biasing network, VDS=5V, gfs=31mS, Gp=23dB, F=1.5dB |
Infineon |
2698 |
BF2030R |
RF-MOSFET - integrated semi biasing network, VDS=5V, gfs=31mS, Gp=23dB, F=1.5dB |
Infineon |
2699 |
BF2030W |
RF-MOSFET - integrated semi biasing network, VDS=5V, gfs=31mS, Gp=23dB, F=1.5dB |
Infineon |
2700 |
BF2040 |
RF-MOSFET - integrated semi biasing network, VDS=5V, gfs=41mS, Gp=23dB, F=1.5dB |
Infineon |
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