| No. |
Part Name |
Description |
Manufacturer |
| 2701 |
NTD12N10-D |
Power MOSFET 12 Amps, 100 Volts N-Channel Enhancement-Mode DPAK |
ON Semiconductor |
| 2702 |
NTD12N10T4 |
Power MOSFET 12 Amps, 100 Volts |
ON Semiconductor |
| 2703 |
NTD12N10T4G |
Power MOSFET 12 Amps, 100 Volts |
ON Semiconductor |
| 2704 |
NTD6414AN |
N-Channel Power MOSFET 100 V, 32 A, 37 mOHM |
ON Semiconductor |
| 2705 |
NTD6415AN |
Power MOSFET, 100 V, 23 A, 55 mΩ, N-Channel |
ON Semiconductor |
| 2706 |
NTD6416AN |
Power MOSFET, N-Channel, 100 V, 17 A, 81 mΩ |
ON Semiconductor |
| 2707 |
NTD6416ANL |
Power MOSFET, N-Channel, 100 V, 19 A, 74 mΩ |
ON Semiconductor |
| 2708 |
NTD6600N |
Power MOSFET 100 V, 12 A, N-Channel, Logic Level DPAK |
ON Semiconductor |
| 2709 |
NTMFS4846N |
Power MOSFET, 30 V, 100 A, Single N-Channel |
ON Semiconductor |
| 2710 |
NTMFS4946N |
Power MOSFET, 30 V, 100 A, Single N-Channel |
ON Semiconductor |
| 2711 |
NTP13N10-D |
Power MOSFET 13 Amps, 100 Volts N-Channel Enhancement-Mode TO-220 |
ON Semiconductor |
| 2712 |
NTP52N10-D |
Power MOSFET 52 Amps, 100 Volts N-Channel Enhancement Mode TO-220 |
ON Semiconductor |
| 2713 |
NTP52N10/D |
Power MOSFET 52 Amps, 100 Volts |
ON Semiconductor |
| 2714 |
NTP52N10D |
Power MOSFET 52 Amps / 100 Volts |
ON Semiconductor |
| 2715 |
NTY100N10 |
Power MOSFET 123 A, 100 V N-Channel Enhancement-Mode TO264 Package |
ON Semiconductor |
| 2716 |
NUD3048MT1G |
FET Switch 100 V, 800 m ohm, N−Channel, TSOP−6 |
ON Semiconductor |
| 2717 |
P4KE100C |
400 Watt peak power. Transient voltage suppressor diode. Nominal voltage 100 V. Bidirectional. |
Jinan Gude Electronic Device |
| 2718 |
P4KE100CA |
400 Watt peak power. Transient voltage suppressor diode. Nominal voltage 100 V. Bidirectional. |
Jinan Gude Electronic Device |
| 2719 |
P6KE100C |
400 Watt peak power. Transient voltage suppressor diode. Nominal voltage 100 V. Bidirectional. |
Jinan Gude Electronic Device |
| 2720 |
P6KE100CA |
400 Watt peak power. Transient voltage suppressor diode. Nominal voltage 100 V. Bidirectional. |
Jinan Gude Electronic Device |
| 2721 |
PAL10016P8JC |
-4.5 V, 100 K, ECL programmable array logic |
National Semiconductor |
| 2722 |
PBSS8110AS |
PBSS8110AS; 100 V, 1 A NPN low VCEsat (BISS) transistor |
Philips |
| 2723 |
PBSS8110AS |
PBSS8110AS; 100 V, 1 A NPN low VCEsat (BISS) transistor |
Philips |
| 2724 |
PBSS8110D |
PBSS8110D; 100 V, 1 A NPN low VCEsat (BISS) transistor |
Philips |
| 2725 |
PBSS8110S |
PBSS8110S; 100 V, 1 A NPN low VCEsat (BISS) transistor |
Philips |
| 2726 |
PBSS8110T |
PBSS8110T; 100 V, 1 A NPN low VCEsat (BISS) transistor |
Philips |
| 2727 |
PBSS8110Y |
PBSS8110Y; 100 V, 1 A NPN low VCEsat (BISS) transistor |
Philips |
| 2728 |
PBSS8110Z |
PBSS8110Z; 100 V, 1 A NPN low VCEsat (BISS) transistor |
Philips |
| 2729 |
PBSS9110AS |
PBSS9110AS; 100 V, 1 A PNP low VCEsat (BISS) transistor |
Philips |
| 2730 |
PBSS9110D |
PBSS9110D; 100 V, 1 A PNP low VCEsat (BISS) transistor |
Philips |
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