| No. |
Part Name |
Description |
Manufacturer |
| 2701 |
IRF743 |
MOSPOWER N-Channel Enhancement Mode Transistor 350V 8.0A |
Siliconix |
| 2702 |
IRF82 |
N CHANNEL ENHANCEMENT MODE POWER MOSTRANSISTORS |
ST Microelectronics |
| 2703 |
IRF820 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 500V. Continuous drain current(at Tc 25deg) 2.5A. |
General Electric Solid State |
| 2704 |
IRF820 |
N-CHANNEL Enhancement-Mode Silicon Gate TMOS |
Motorola |
| 2705 |
IRF820 |
MOSPOWER N-Channel Enhancement Mode Transistor 500V 2.5A |
Siliconix |
| 2706 |
IRF820FI |
N-channel enhancement mode power MOS transistor, 500V, 2.2A |
SGS Thomson Microelectronics |
| 2707 |
IRF821 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 450V. Continuous drain current(at Tc 25deg) 2.5A. |
General Electric Solid State |
| 2708 |
IRF821 |
N-CHANNEL Enhancement-Mode Silicon Gate TMOS |
Motorola |
| 2709 |
IRF821 |
MOSPOWER N-Channel Enhancement Mode Transistor 450V 2.5A |
Siliconix |
| 2710 |
IRF822 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 500V. Continuous drain current(at Tc 25deg) 2.0A. |
General Electric Solid State |
| 2711 |
IRF822 |
N-channel enhancement mode power MOS transistor, 500V, 2.8A |
SGS Thomson Microelectronics |
| 2712 |
IRF822 |
MOSPOWER N-Channel Enhancement Mode Transistor 500V 2.0A |
Siliconix |
| 2713 |
IRF822FI |
N-channel enhancement mode power MOS transistor, 500V, 1.9A |
SGS Thomson Microelectronics |
| 2714 |
IRF822FI |
N CHANNEL ENHANCEMENT MODE POWER MOSTRANSISTORS |
ST Microelectronics |
| 2715 |
IRF823 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 450V. Continuous drain current(at Tc 25deg) 2.0A. |
General Electric Solid State |
| 2716 |
IRF823 |
N-CHANNEL Enhancement-Mode Silicon Gate TMOS |
Motorola |
| 2717 |
IRF823 |
MOSPOWER N-Channel Enhancement Mode Transistor 450V 2.0A |
Siliconix |
| 2718 |
IRF82FI |
N CHANNEL ENHANCEMENT MODE POWER MOSTRANSISTORS |
ST Microelectronics |
| 2719 |
IRF830 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 500V. Continuous drain current(at Tc 25deg) 4.5A. |
General Electric Solid State |
| 2720 |
IRF830 |
MOSPOWER N-Channel Enhancement Mode Transistor 500V 4.5A |
Siliconix |
| 2721 |
IRF830 |
N-CHANNEL ENHANCEMENT MODE |
TRSYS |
| 2722 |
IRF830-D |
Power Field Effect Transistor N-Channel Enhancement Mode Silicon Gate TMOS |
ON Semiconductor |
| 2723 |
IRF831 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 450V. Continuous drain current(at Tc 25deg) 4.5A. |
General Electric Solid State |
| 2724 |
IRF831 |
MOSPOWER N-Channel Enhancement Mode Transistor 450V 4.5A |
Siliconix |
| 2725 |
IRF832 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 500V. Continuous drain current(at Tc 25deg) 4.0A. |
General Electric Solid State |
| 2726 |
IRF832 |
MOSPOWER N-Channel Enhancement Mode Transistor 500V 4.0A |
Siliconix |
| 2727 |
IRF833 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 450V. Continuous drain current(at Tc 25deg) 4.0A. |
General Electric Solid State |
| 2728 |
IRF833 |
MOSPOWER N-Channel Enhancement Mode Transistor 450V 4.0A |
Siliconix |
| 2729 |
IRF840 |
N-CHANNEL ENHANCEMENT-MODE SILICON GATE TMOS POWER FIELD EFFECT TRANSISTOR |
Motorola |
| 2730 |
IRF840 |
MOSPOWER N-Channel Enhancement Mode Transistor 500V 8A |
Siliconix |
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