| No. |
Part Name |
Description |
Manufacturer |
| 2701 |
1N5402-G |
General Purpose Rectifier, VRRM=200V, VR=200V, IO=3A |
Comchip Technology |
| 2702 |
1N5404 |
3.0A Rectifier |
Comchip Technology |
| 2703 |
1N5404-G |
General Purpose Rectifier, VRRM=400V, VR=400V, IO=3A |
Comchip Technology |
| 2704 |
1N5406 |
3.0A Rectifier |
Comchip Technology |
| 2705 |
1N5406-G |
General Purpose Rectifier, VRRM=600V, VR=600V, IO=3A |
Comchip Technology |
| 2706 |
1N5407 |
3.0A Rectifier |
Comchip Technology |
| 2707 |
1N5407-G |
General Purpose Rectifier, VRRM=800V, VR=800V, IO=3A |
Comchip Technology |
| 2708 |
1N5408 |
3.0A Rectifier |
Comchip Technology |
| 2709 |
1N5408-G |
General Purpose Rectifier, VRRM=1000V, VR=1000V, IO=3A |
Comchip Technology |
| 2710 |
1N5802-1 |
2.5 AMPS FAST RECOVERY RECTIFIER CHIP 50 - 150 VOLTS |
Microsemi |
| 2711 |
1N5817 |
Schottky Barrier Rectifier |
Comchip Technology |
| 2712 |
1N5817-G |
Schottky Barrier Rectifiers Diodes, VRRM=20V, VR=20V, IO=1A |
Comchip Technology |
| 2713 |
1N5818 |
Schottky Barrier Rectifier |
Comchip Technology |
| 2714 |
1N5818-G |
Schottky Barrier Rectifiers Diodes, VRRM=30V, VR=30V, IO=1A |
Comchip Technology |
| 2715 |
1N5819 |
Schottky Barrier Rectifier |
Comchip Technology |
| 2716 |
1N5819-G |
Schottky Barrier Rectifiers Diodes, VRRM=40V, VR=40V, IO=1A |
Comchip Technology |
| 2717 |
1N5820-G |
Schottky Barrier Rectifiers Diodes, VRRM=20V, VR=20V, IO=3A |
Comchip Technology |
| 2718 |
1N5821-G |
Schottky Barrier Rectifiers Diodes, VRRM=30V, VR=30V, IO=3A |
Comchip Technology |
| 2719 |
1N5822-G |
Schottky Barrier Rectifiers Diodes, VRRM=40V, VR=40V, IO=3A |
Comchip Technology |
| 2720 |
1S1921A |
Silicon Diffused Junction Diode used for TV 15kHz Rectifier Horizontal Clip - VR(peak) -200V |
Hitachi Semiconductor |
| 2721 |
1S1921B |
Silicon Diffused Junction Diode used for TV 15kHz Rectifier Horizontal Clip - VR(peak) -400V |
Hitachi Semiconductor |
| 2722 |
1S1921C |
Silicon Diffused Junction Diode used for TV 15kHz Rectifier Horizontal Clip - VR(peak) -600V |
Hitachi Semiconductor |
| 2723 |
1S1921D |
Silicon Diffused Junction Diode used for TV 15kHz Rectifier Horizontal Clip - VR(peak) -800V |
Hitachi Semiconductor |
| 2724 |
1S1921E |
Silicon Diffused Junction Diode used for TV 15kHz Rectifier Horizontal Clip - VR(peak) -1000V |
Hitachi Semiconductor |
| 2725 |
1S1921F |
Silicon Diffused Junction Diode used for TV 15kHz Rectifier Horizontal Clip - VR(peak) -1200V |
Hitachi Semiconductor |
| 2726 |
1SS400-G |
Small Signal Switching Diodes, VRRM=90V, VR=90V, PD=150mW, IF=100mA |
Comchip Technology |
| 2727 |
2-AA118 |
HF Germanium tip diode pair for phase discriminator circuits |
TUNGSRAM |
| 2728 |
2-AA119 |
HF germanium tip diode pair for high-resistance ratio detector and discriminator circuits |
TUNGSRAM |
| 2729 |
20 DIP |
20DIP Package Dimensions |
Samsung Electronic |
| 2730 |
2020-100 |
Delay 100 +/-10 ns, fixed SIP delay line Tr |
Data Delay Devices Inc |
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